OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

IXFH18N90P

IXFH18N90P
Mfr. #:
IXFH18N90P
Produttore:
Littelfuse
Descrizione:
IGBT Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH18N90P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFH18N90P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
FET - Single
Serie
IXFH18N90
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Nome depositato
HyperFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
540 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
44 ns
Ora di alzarsi
33 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
18 A
Vds-Drain-Source-Breakdown-Voltage
900 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
3 V to 6 V
Rds-On-Drain-Source-Resistenza
600 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
60 ns
Tempo di ritardo all'accensione tipico
40 ns
Qg-Gate-Carica
97 nC
Transconduttanza diretta-Min
10 S
Modalità canale
Aumento
Tags
IXFH18N, IXFH18, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-247
***pNet
N CH POLAR PMOS HiPerFET, 900V, 18A, TO-247
***ment14 APAC
MOSFET,N CH,900V,18A,TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:900V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:540W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:18A; Power Dissipation Pd:540W; Voltage Vgs Max:30V
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXFH18N90P
DISTI # V99:2348_15877383		IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.2550
  • 500:$5.5250
  • 250:$6.0450
  • 100:$6.5820
  • 50:$6.7690
  • 25:$7.2560
  • 10:$8.4930
  • 1:$10.2311
IXFH18N90P
DISTI # IXFH18N90P-ND		IXYS CorporationMOSFET N-CH TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$7.6877
IXFH18N90P
DISTI # 25894581		IXYS CorporationTrans MOSFET N-CH 900V 18A 3-Pin(3+Tab) TO-24730
  • 1000:$5.6491
  • 500:$5.9394
  • 250:$6.4984
  • 100:$7.0757
  • 50:$7.2767
  • 25:$7.8002
  • 10:$9.1300
  • 2:$9.9986
IXFH18N90P
DISTI # 747-IXFH18N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		440
  • 1:$10.7800
  • 10:$9.7000
  • 25:$8.0700
  • 50:$7.5000
  • 100:$7.3300
  • 250:$6.7000
  • 500:$6.1000
  • 1000:$5.8200
Immagine Parte # Descrizione
IXFH110N10P

Mfr.#: IXFH110N10P

OMO.#: OMO-IXFH110N10P

 MOSFET 110 Amps 100V 0.015 Rds
IXFH14N60P

Mfr.#: IXFH14N60P

OMO.#: OMO-IXFH14N60P

 MOSFET 600V 14A
IXFH16N50P3

Mfr.#: IXFH16N50P3

OMO.#: OMO-IXFH16N50P3

 MOSFET Polar3 HiPerFET Power MOSFET
IXFH102N15T

Mfr.#: IXFH102N15T

OMO.#: OMO-IXFH102N15T

 MOSFET 102 Amps 0V
IXFH15N60

Mfr.#: IXFH15N60

OMO.#: OMO-IXFH15N60

 MOSFET 15 Amps 600V
IXFH13N90

Mfr.#: IXFH13N90

OMO.#: OMO-IXFH13N90

 MOSFET 13 Amps 900V 0.8 Rds
IXFH170N10P

Mfr.#: IXFH170N10P

OMO.#: OMO-IXFH170N10P-IXYS-CORPORATION

 Darlington Transistors MOSFET 170 Amps 100V 0.009 Rds
IXFH12N100

Mfr.#: IXFH12N100

OMO.#: OMO-IXFH12N100-IXYS-CORPORATION

 MOSFET 1KV 12A
IXFH17N80Q

Mfr.#: IXFH17N80Q

OMO.#: OMO-IXFH17N80Q-IXYS-CORPORATION

 MOSFET 17 Amps 800V 0.60 Rds
IXFH15N60

Mfr.#: IXFH15N60

OMO.#: OMO-IXFH15N60-IXYS-CORPORATION

 MOSFET 15 Amps 600V
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IXFH18N90P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
7,88 USD
7,88 USD
10
7,49 USD
74,88 USD
100
7,09 USD
709,43 USD
500
6,70 USD
3 350,05 USD
1000
6,31 USD
6 306,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
More Newest Products
Top