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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPI023NE7N3 G DISTI # IPI023NE7N3G-ND | Infineon Technologies AG | MOSFET N-CH 75V 120A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPI023NE7N3 G DISTI # 726-IPI023NE7N3G | Infineon Technologies AG | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant | 0 | |
| IPI023NE7N3G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 6946 |
|
| IPI023NE7N3 G | Infineon Technologies AG | RoHS: Not Compliant | 1500 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPI023NE7N3 G OMO.#: OMO-IPI023NE7N3-G |
MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI023NE7N3 OMO.#: OMO-IPI023NE7N3-1190 |
Nuovo e originale |
|
|
Mfr.#: IPI023NE7N3G OMO.#: OMO-IPI023NE7N3G-1190 |
Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
Mfr.#: IPI023NE7N3 G |
IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 |
