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FS200R12PT4PBOSA1

FS200R12PT4PBOSA1
Mfr. #:
FS200R12PT4PBOSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules MEDIUM POWER ECONO
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FS200R12PT4PBOSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FS200R12PT4PBOSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Tecnologia:
si
Prodotto:
Moduli di silicio IGBT
Configurazione:
IGBT-Inverter
Tensione collettore-emettitore VCEO Max:
1.2 kV
Tensione di saturazione collettore-emettitore:
1.75 V
Corrente continua del collettore a 25 C:
200 A
Corrente di dispersione gate-emettitore:
100 nA
Pd - Dissipazione di potenza:
20 mW
Pacchetto/custodia:
130 mm x 103 mm x 20.55 mm
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Vassoio
Marca:
Tecnologie Infineon
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
6
sottocategoria:
IGBT
Parte # Alias:
FS200R12PT4P SP001061018
Tags
FS200R12P, FS200R1, FS200R, FS200, FS20, FS2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOD IGBT MED PWR ECONO4-1
***et Europe
MEDIUM POWER ECONO
***ark
Igbt, Module, N-Ch, 1.2Kv, 200A; Transistor Polarity:n Channel; Dc Collector Current:200A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 200A; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPACK 4 Series; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 1.2KV, 200A; Polarità Transistor:Canale N; Corrente di Collettore CC:200A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:-; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPACK 4 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EconoPACK 4 1200V sixpack IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; 2.5 kV AC 1min Insulation; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
EconoPACK™ 4 Power Modules
Infineon Technologies EconoPACK™ 4 Power Modules feature a rugged mechanical design with ultrasonic welded and injection-molded screw terminals. The EconoPACK™ 4 perfectly fits into the well-known Econo portfolio. The devices feature easy assembly with PressFIT control pins and screw power terminals for solderless connections. The modules have an optimized module layout for high-power densities.
Parte # Mfg. Descrizione Azione Prezzo
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1-ND		Infineon Technologies AGMOD IGBT MED PWR ECONO4-1
RoHS: Compliant
Min Qty: 6
Container: Tray		Temporarily Out of Stock
  • 6:$218.4350
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS200R12PT4PBOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 0
  • 60:$185.2900
  • 36:$189.8900
  • 24:$194.6900
  • 12:$199.6900
  • 6:$202.3900
FS200R12PT4PBOSA1
DISTI # FS200R12PT4PBOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Bulk (Alt: FS200R12PT4PBOSA1)
Min Qty: 2
Container: Bulk		Americas - 0
  • 20:$182.3900
  • 10:$185.6900
  • 6:$192.0900
  • 4:$199.3900
  • 2:$206.7900
FS200R12PT4PBOSA1
DISTI # SP001061018		Infineon Technologies AGMEDIUM POWER ECONO (Alt: SP001061018)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€181.4900
  • 500:€185.6900
  • 100:€191.2900
  • 50:€197.7900
  • 25:€204.6900
  • 10:€225.1900
  • 1:€278.5900
FS200R12PT4PBOSA1
DISTI # 726-FS200R12PT4PBOSA		Infineon Technologies AGIGBT Modules MEDIUM POWER ECONO
RoHS: Compliant		9
  • 1:$223.0400
  • 5:$217.6800
  • 10:$212.2700
  • 25:$209.2900
FS200R12PT4PBOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 280A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		24
  • 1000:$188.9100
  • 500:$198.8500
  • 100:$207.0200
  • 25:$215.9000
  • 1:$232.5000
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A
RoHS: Compliant		0
  • 5:$342.7700
  • 1:$355.4600
FS200R12PT4PBOSA1
DISTI # 2781257		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 200A0
  • 5:£169.0000
  • 1:£172.0000
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Disponibilità
Azione:
Available
Su ordine:
1990
Inserisci la quantità:
Il prezzo attuale di FS200R12PT4PBOSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
223,04 USD
223,04 USD
5
217,68 USD
1 088,40 USD
10
212,27 USD
2 122,70 USD
25
209,29 USD
5 232,25 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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