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IXFT18N100Q3

IXFT18N100Q3
Mfr. #:
IXFT18N100Q3
Produttore:
Littelfuse
Descrizione:
Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFT18N100Q3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFT18N100Q3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXFT18N100
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
SMD/SMT
Nome depositato
HyperFET
Pacchetto-Custodia
TO-268-2
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
830 W
Massima temperatura di esercizio
+ 150 C
Tempo di caduta
13 ns
Ora di alzarsi
32 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
18 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Rds-On-Drain-Source-Resistenza
660 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
40 ns
Tempo di ritardo all'accensione tipico
37 nS
Qg-Gate-Carica
90 nC
Transconduttanza diretta-Min
16 S
Tags
IXFT18, IXFT1, IXFT, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descrizione Azione Prezzo
IXFT18N100Q3
DISTI # IXFT18N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 18A TO-268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$14.5707
IXFT18N100Q3
DISTI # 747-IXFT18N100Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
RoHS: Compliant		0
  • 1:$18.1100
  • 10:$16.4700
  • 25:$15.2300
  • 50:$14.0100
  • 100:$13.6700
  • 250:$12.5300
  • 500:$11.3700
IXFT18N100Q3
DISTI # 8011461P		IXYS CorporationMOSFET N-CH 1000V 18A Q3 HIPERFET TO268, TU24
  • 5:£10.4800
  • 10:£10.0100
  • 25:£9.6600
IXFT18N100Q3
DISTI # 2674768		IXYS CorporationMOSFET, N-CH, 1KV, 18A, TO-268
RoHS: Compliant		0
  • 1:£14.2800
  • 5:£14.1500
  • 10:£11.4000
  • 50:£10.9500
  • 100:£10.6800
Immagine Parte # Descrizione
IXFT18N100Q3

Mfr.#: IXFT18N100Q3

OMO.#: OMO-IXFT18N100Q3

 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFT180N20X3HV

Mfr.#: IXFT180N20X3HV

OMO.#: OMO-IXFT180N20X3HV

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IXFT18N90P

Mfr.#: IXFT18N90P

OMO.#: OMO-IXFT18N90P

 MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFT180N20X3HV

Mfr.#: IXFT180N20X3HV

OMO.#: OMO-IXFT180N20X3HV-IXYS-CORPORATION

 200V/180A ULTRA JUNCTION X3-CLAS
IXFT1874 TR

Mfr.#: IXFT1874 TR

OMO.#: OMO-IXFT1874-TR-IXYS-CORPORATION

 MOSFET N-CH TO268
IXFT18N100Q3

Mfr.#: IXFT18N100Q3

OMO.#: OMO-IXFT18N100Q3-IXYS-CORPORATION

 Darlington Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
IXFT18N90P

Mfr.#: IXFT18N90P

OMO.#: OMO-IXFT18N90P-IXYS-CORPORATION

 Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Disponibilità
Azione:
Available
Su ordine:
4500
Inserisci la quantità:
Il prezzo attuale di IXFT18N100Q3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
17,06 USD
17,06 USD
10
16,20 USD
162,02 USD
100
15,35 USD
1 534,95 USD
500
14,50 USD
7 248,40 USD
1000
13,64 USD
13 644,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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