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IXTP6N50P

IXTP6N50P
Mfr. #:
IXTP6N50P
Produttore:
IXYS
Descrizione:
MOSFET 6 Amps 500V 1.1 Ohms Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXTP6N50P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP6N50P DatasheetIXTP6N50P Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
IXTP6N50
Confezione
Tubo
Unità di peso
0.081130 oz
Stile di montaggio
Foro passante
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
100 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
26 ns
Ora di alzarsi
28 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuo-Scarico-Corrente
6 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Rds-On-Drain-Source-Resistenza
1.1 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
65 ns
Tempo di ritardo all'accensione tipico
26 ns
Transconduttanza diretta-Min
5.5 S
Modalità canale
Aumento
Tags
IXTP6N5, IXTP6N, IXTP6, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 6 A 1.1 O Flange Mount PolarHV Power Mosfet - TO-220
***inecomponents.com
Trans MOSFET N-CH 500V 6A 3-Pin (3+Tab) TO-220
***el Nordic
Contact for details
***p One Stop Global
Trans MOSFET N-CH Si 500V 7A 3-Pin(3+Tab) TO-220FM Bulk
*** Source Electronics
MOSFET N-CH 500V 7A TO220
***i-Key
MOSFET N-CH 500V 7A TO220FM
***va Crawler
N-channel 500 V, 0.72 Ohm typ., 7.2 A SuperMESH Power MOSFET in TO-220FP package
***ical
Trans MOSFET N-CH 500V 7.2A 3-Pin(3+Tab) TO-220FP Tube
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 30 W
***ure Electronics
N-Channel 500 V 0.85 Ohm Zener-Protected SuperMESH MOSFET
***ark
MOSFET, N CHANNEL, 500V, 7.2A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:7.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 7 A, 1 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 7A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 7A I(D), 500V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 7A, TO-220F;; N CH MOSFET, UNITFET, 500V, 7A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:500V; On Resistance Rds(on):850mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***et
Trans MOSFET N-CH 500V 7.5A 3-Pin(3+Tab) TO-220SIS
***
500V N-CH 7.5A MOS 35W 700PF
***ponent Sense
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 500V, 5A, 1.5Ω, TO-220F
***emi
N-Channel UniFETTM MOSFET 500V, 7A, 900mΩ
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:7A; Resistance, Rds On:0.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:28A; No. of Pins:3; Power Dissipation:31.3W; Voltage, Vds Max:500V; Voltage, Vgs th Max:5V
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***et
Power Transister, Cool MOS, N-CH 560V 4.5A 3-Pin TO-220 Tube
***i-Key Marketplace
MOSFET N-CH 560V 4.5A TO220-FP
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Parte # Mfg. Descrizione Azione Prezzo
IXTP6N50P
DISTI # IXTP6N50P-ND		IXYS CorporationMOSFET N-CH 500V 6A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
  • 50:$1.1704
IXTP6N50P
DISTI # 747-IXTP6N50P		IXYS CorporationMOSFET 6 Amps 500V 1.1 Ohms Rds
RoHS: Compliant		0
  • 1:$1.3500
  • 10:$1.2200
  • 25:$1.0700
  • 50:$0.9980
  • 100:$0.9840
  • 250:$0.7980
  • 500:$0.7650
  • 1000:$0.6340
  • 2500:$0.5320
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OMO.#: OMO-IXTP01N100D-IXYS-CORPORATION

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Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IXTP6N50P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,80 USD
0,80 USD
10
0,76 USD
7,58 USD
100
0,72 USD
71,82 USD
500
0,68 USD
339,15 USD
1000
0,64 USD
638,40 USD
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