OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

FDU6N50TU

FDU6N50TU
Mfr. #:
FDU6N50TU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 500V N-Channel MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDU6N50TU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
500 V
Id - Corrente di scarico continua:
6 A
Rds On - Resistenza Drain-Source:
900 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
89 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FDU6N50
Tipo di transistor:
1 N-Channel
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Tempo di caduta:
35 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
55 ns
Quantità confezione di fabbrica:
5040
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
25 ns
Tempo di ritardo di accensione tipico:
6 ns
Unità di peso:
0.012102 oz
Tags
FDU6N5, FDU6N, FDU6, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 mΩ, IPAK
***et
Trans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
MOSFET, N-CH, 500V, 6A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:6A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in IPAK package
***ark
Power Mosfet, N Channel, 7 A, 650 V, 0.6 Ohm, 10 V, 3 V Rohs Compliant: Yes
*** Electronics
STMICROELECTRONICS STU11N65M2 Power MOSFET, N Channel, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 7A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P
***emi
Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, IPAK
***nell
MOSFET, N, 600V, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.6A; Resistance, Rds On:0.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:13.8A; No. of Pins:3; Power Dissipation:54W; Power, Pd:54W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Voltage, Vds:600V; Voltage, Vds Max:600V; Voltage, Vgs th Max:5V; dv/dt:10V/µs
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***i-Key
MOSFET N-CH 400V 4.5A IPAK
***ser
MOSFETs 400V N-Channel Adv Q-FET C-Series
***icroelectronics
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package
***ure Electronics
N-Channel 600 V 780 mOhm Through Hole Mdmesh II Plus Mosfet - IPAK
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
***el Electronic
STMICROELECTRONICS STU9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
***nell
MOSFET, N CHANNEL, 650V, 5A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***emi
Power MOSFET 600V 6.8A 745 mOhm Single N-Channel DPAK
***ical
Trans MOSFET N-CH 600V 6.6A 3-Pin(2+Tab) DPAK Tube
***ark
TUBE / NFET DPAK 600V 6.8A 745
***nell
NDD60N745U1-35G, SHIFT REGISTERS;
Parte # Mfg. Descrizione Azione Prezzo
FDU6N50TU
DISTI # FDU6N50TU-ND		ON SemiconductorMOSFET N-CH 500V 6A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Temporarily Out of Stock
  • 5040:$0.5265
FDU6N50TU
DISTI # FDU6N50TU		ON SemiconductorTrans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FDU6N50TU)
RoHS: Compliant
Min Qty: 5040
Container: Tube		Americas - 0
  • 5040:$0.3849
  • 10080:$0.3819
  • 20160:$0.3769
  • 30240:$0.3729
  • 50400:$0.3629
FDU6N50TU
DISTI # FDU6N50TU		ON SemiconductorTrans MOSFET N-CH 500V 6A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FDU6N50TU)
RoHS: Compliant
Min Qty: 472
Container: Bulk		Americas - 0
  • 472:$0.4959
  • 474:$0.4929
  • 946:$0.4869
  • 2360:$0.4809
  • 4720:$0.4689
FDU6N50TU
DISTI # 86K1401		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,6A I(D),TO-251AA0
  • 10000:$0.4760
  • 2500:$0.4910
  • 1000:$0.6080
  • 500:$0.6960
  • 100:$0.7880
  • 10:$1.0300
  • 1:$1.2000
FDU6N50TU
DISTI # 512-FDU6N50TU		ON SemiconductorMOSFET 500V N-Channel MOSFET
RoHS: Compliant		4015
  • 1:$1.2100
  • 10:$1.0300
  • 100:$0.7880
  • 500:$0.6960
  • 1000:$0.5500
  • 2500:$0.4880
  • 10000:$0.4690
FDU6N50TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		9586
  • 1000:$0.5000
  • 500:$0.5300
  • 100:$0.5500
  • 25:$0.5700
  • 1:$0.6200
Immagine Parte # Descrizione
TN4015H-6T

Mfr.#: TN4015H-6T

OMO.#: OMO-TN4015H-6T

 SCRs High Temperature 40A SCRs
TYN812RG

Mfr.#: TYN812RG

OMO.#: OMO-TYN812RG

 SCRs THYRISTOR
MCR12DG

Mfr.#: MCR12DG

OMO.#: OMO-MCR12DG

 SCRs 400V 12A
MJE181STU

Mfr.#: MJE181STU

OMO.#: OMO-MJE181STU

 Bipolar Transistors - BJT NPN Epitaxial Sil
BZX79C3V9

Mfr.#: BZX79C3V9

OMO.#: OMO-BZX79C3V9

 Zener Diodes 3.9V 0.5W Zener
1N5231CTR

Mfr.#: 1N5231CTR

OMO.#: OMO-1N5231CTR

 Zener Diodes 5.2V 0.5W Zener
STTH1210DI

Mfr.#: STTH1210DI

OMO.#: OMO-STTH1210DI

 Rectifiers Ultrafast recovery high voltage diode
IRLB4132PBF

Mfr.#: IRLB4132PBF

OMO.#: OMO-IRLB4132PBF

 MOSFET TRENCH_MOSFETS
0ADKP9100-RE

Mfr.#: 0ADKP9100-RE

OMO.#: OMO-0ADKP9100-RE

 Cartridge Fuses FUSE, CERAMIC TUBE 10A, 600VAC/500VDC
IRLB4132PBF

Mfr.#: IRLB4132PBF

OMO.#: OMO-IRLB4132PBF-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 78A TO220
Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di FDU6N50TU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,11 USD
1,11 USD
10
0,95 USD
9,49 USD
100
0,73 USD
72,80 USD
500
0,64 USD
322,00 USD
1000
0,51 USD
508,00 USD
2500
0,45 USD
1 125,00 USD
10000
0,43 USD
4 330,00 USD
25000
0,42 USD
10 500,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • Gate Drivers
    Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • NCP137 700 mA LDO Regulators
    NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • Compare FDU6N50TU
    Compare FDU6N50TU
    FDU6N50 vs FDU6N50FTU vs FDU6N50TU
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
More Newest Products
Top