AOK40N30L

Mfr. #:: AOK40N30L
Produttore:: Alpha & Omega Semiconductor Inc
Descrizione:: MOSFET N-CH 300V 40A TO247
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: AOK40N30L Scheda dati
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HTML Datasheet:: AOK40N30L Datasheet AOK40N30L Datasheet (P4-P5)
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Tags: AOK40, AOK4, AOK

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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AOK40N30L Descrizione

***i-Key: MOSFET N-CH 300V 40A TO247

***el Electronic: IC REG BUCK ADJ 8A SYNC 28HTSSOP

***icroelectronics: N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a TO-247 package

***r Electronics: Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 300V 42A Automotive 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: Automotive Q101 300V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package, TO247-3, RoHS

***ical: Trans MOSFET N-CH 300V 38A Automotive 3-Pin(3+Tab) TO-247AC Tube

*** Electronic Components: MOSFET Auto Q101 300V SGL N-CH HEXFET

***ineon: Target Applications: HV DC-DC Converter

***emi: N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247

***ark: Mosfet, N Channel, 650V, 44A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 44A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***rchild Semiconductor: SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V

***el Electronic: INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V

***ure Electronics: Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***p One Stop: Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube

***roFlash: Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS

***ure Electronics: Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC

***nell: MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214

***emi: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 37 A, 104 mΩ, TO-247

***roFlash: Power Field-Effect Transistor, 37A I(D), 600V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

***nell: SUPERFET2 104MOHM, FRFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissi

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
AOK40N30L DISTI # V36:1790_07841675	Alpha & Omega Semiconductor	Trans MOSFET N-CH 300V 40A 3-Pin(3+Tab) TO-247 RoHS: Compliant	0	240000:$1.1390 120000:$1.1420 24000:$1.3830 2400:$1.8090 240:$1.8800
AOK40N30L DISTI # 785-1447-5-ND	Alpha & Omega Semiconductor	MOSFET N-CH 300V 40A TO247 RoHS: Compliant Min Qty: 480 Container: Tube	Temporarily Out of Stock	480:$1.8800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: AOK40B120M1 OMO.#: OMO-AOK40B120M1-ALPHA-AND-OMEGA-SEMICONDUCTOR	IGBT 1200V 40A TO-247
	Mfr.#: AOK40B60D OMO.#: OMO-AOK40B60D-ALPHA-AND-OMEGA-SEMICONDUCTOR	IGBT 600V 80A 312.5W TO247
	Mfr.#: AOK40B60D1 OMO.#: OMO-AOK40B60D1-ALPHA-AND-OMEGA-SEMICONDUCTOR	IGBT 600V 80A 278W TO247
	Mfr.#: AOK40B60D1L OMO.#: OMO-AOK40B60D1L-1190	Nuovo e originale
	Mfr.#: AOK40B65H1 OMO.#: OMO-AOK40B65H1-ALPHA-AND-OMEGA-SEMICONDUCTOR	IGBT 650V 40A TO247
	Mfr.#: AOK40B65H2AL OMO.#: OMO-AOK40B65H2AL-ALPHA-AND-OMEGA-SEMICONDUCTOR	IGBT 650V 40A TO-247
	Mfr.#: AOK40D120M OMO.#: OMO-AOK40D120M-1190	Nuovo e originale
	Mfr.#: AOK40N30L OMO.#: OMO-AOK40N30L-ALPHA-AND-OMEGA-SEMICONDUCTOR	MOSFET N-CH 300V 40A TO247
	Mfr.#: AOK42S60 OMO.#: OMO-AOK42S60-1190	Nuovo e originale
	Mfr.#: AOK431 OMO.#: OMO-AOK431-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2500
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AOK40N30L

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes