SI2306BDS-T1-GE3

Mfr. #:: SI2306BDS-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI2306BDS-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2306BDS-T1-GE3 Datasheet SI2306BDS-T1-GE3 Datasheet (P4-P6)SI2306BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:: SI2306BDS-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-23-3

Nome depositato:: TrenchFET

Confezione:: Bobina

Serie:: SI2

Marca:: Vishay / Siliconix

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Parte # Alias:: SI2306BDS-GE3

Unità di peso:: 0.000282 oz

Tags: SI2306BDS-T1, SI2306BDS-T, SI2306B, SI2306, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2306BDS-T1-GE3 Descrizione

***ical: Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

***ronik: N-CHANNEL-FET 4A 30V SOT23 RoHSconf

***ment14 APAC: N CHANNEL MOSFET, 30V, 4A, TO-236; Trans; N CHANNEL MOSFET, 30V, 4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3

SI2306BDS-T1-GE3 Maggiori informazioni

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI2306BDS-T1-GE3 DISTI # V72:2272_09216787	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	2468	1000:$0.2567 500:$0.3246 250:$0.3731 100:$0.4146 25:$0.5007 10:$0.6120 1:$0.7921
SI2306BDS-T1-GE3 DISTI # V36:1790_09216787	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.2127
SI2306BDS-T1-GE3 DISTI # SI2306BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 3.16A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3520In Stock	1000:$0.2390 500:$0.3093 100:$0.3937 10:$0.5270 1:$0.6200
SI2306BDS-T1-GE3 DISTI # SI2306BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 3.16A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3520In Stock	1000:$0.2390 500:$0.3093 100:$0.3937 10:$0.5270 1:$0.6200
SI2306BDS-T1-GE3 DISTI # SI2306BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 3.16A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.1747 15000:$0.1843 6000:$0.1979 3000:$0.2116
SI2306BDS-T1-GE3 DISTI # 32400643	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	3000	3000:$0.1770
SI2306BDS-T1-GE3 DISTI # 33599494	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	3000	327:$0.2354
SI2306BDS-T1-GE3 DISTI # 31084367	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	2468	39:$0.7921
SI2306BDS-T1-GE3 DISTI # SI2306BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1729 18000:€0.1859 12000:€0.2009 6000:€0.2339 3000:€0.3429
SI2306BDS-T1-GE3 DISTI # SI2306BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2306BDS-T1-GE3 DISTI # SI2306BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1659 18000:$0.1709 12000:$0.1759 6000:$0.1829 3000:$0.1889
SI2306BDS-T1-GE3 DISTI # 16P3706	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 16P3706) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.2220 500:$0.2870 250:$0.3180 100:$0.3490 50:$0.4100 25:$0.4700 1:$0.6200
SI2306BDS-T1-GE3 DISTI # 16P3706	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 4A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes	3000	1:$0.1530 25:$0.1530 50:$0.1530 100:$0.1530 250:$0.1530 500:$0.1530 1000:$0.1530
SI2306BDS-T1-GE3. DISTI # 30AC0137	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No	0	30000:$0.1660 18000:$0.1710 12000:$0.1760 6000:$0.1830 1:$0.1890
SI2306BDS-T1-GE3 DISTI # 781-SI2306BDS-T1-GE3	Vishay Intertechnologies	MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V RoHS: Compliant	8400	1:$0.6100 10:$0.4690 100:$0.3480 500:$0.2860 1000:$0.2210 3000:$0.2010 6000:$0.1880 9000:$0.1750
SI2306BDS-T1-GE3	Vishay Intertechnologies		9000

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Disponibilità

Azione:: Available
Su ordine:: 1991
Inserisci la quantità:

Il prezzo attuale di SI2306BDS-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,61 USD~~; ~~0,61 USD~~

10: ~~0,47 USD~~; ~~4,69 USD~~

100: ~~0,35 USD~~; ~~34,80 USD~~

500: ~~0,29 USD~~; ~~143,00 USD~~

1000: ~~0,22 USD~~; ~~221,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SI2306BDS-T1 6
SI2306BDS-T 7
SI2306B 8
SI2306 18
SI230 331
SI23 561
SI2 1125

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SI2306BDS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes