Name: Vishay - SI7405BDN-T1-GE3
Brand: Vishay
SKU: OMO-3295232
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7405BDN-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR 1212-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR 1212-8

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 33W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

Ingresso-Capacità-Ciss-Vds: 3500pF @ 6V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 16A (Tc)

Rds-On-Max-Id-Vgs: 13 mOhm @ 13.5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: 115nC @ 8V

Pd-Power-Dissipazione: 3.6 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 45 ns

Ora di alzarsi: 60 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuo-Scarico-Corrente: 13.5 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Rds-On-Drain-Source-Resistenza: 13 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 80 ns

Tempo di ritardo all'accensione tipico: 22 ns

Modalità canale: Aumento

Tags: SI7405B, SI7405, SI740, SI74, SI7

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7405BDN-T1-GE3 Descrizione

***ied Electronics & Automation: SI7405BDN-T1-GE3 P-channel MOSFET Transistor; 11 A; 12 V; 8-Pin PowerPAK 1212

***Components: Supplied as a Tape, SI7405BDN-T1-GE3 P-Channel MOSFET, 11 A, 12 V, 8-Pin PowerPAK 1212 Vishay

***ure Electronics: P-Channel 12 V 0.013 O 115 nC Surface Mount Power Mosfet - PowerPAK-1212-8

***et Europe: Trans MOSFET P-CH 12V 13.5A 8-Pin PowerPAK 1212 T/R

***ark: Transistor Polarity:P Channel

***: P-CHANNEL 12-V (D-S) MOSFET

***i-Key: MOSFET P-CH 12V 16A 1212-8

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7405BDN-T1-GE3 DISTI # SI7405BDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 16A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3733In Stock	1000:$0.6118 500:$0.7750 100:$0.9993 10:$1.2640 1:$1.4300
SI7405BDN-T1-GE3 DISTI # SI7405BDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 16A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI7405BDN-T1-GE3 DISTI # SI7405BDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 16A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7405BDN-T1-GE3 DISTI # 09X6447	Vishay Intertechnologies	MOSFET, P CHANNEL, -12V, -16A, POWERPAK-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes	0
SI7405BDN-T1-GE3. DISTI # 16AC0268	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-16A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:33W,No. of Pins:8Pins , RoHS Compliant: No	0
SI7405BDN-T1-GE3 DISTI # 70617000	Vishay Siliconix	SI7405BDN-T1-GE3 P-channel MOSFET Transistor,11 A,12 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	300:$0.7400 600:$0.7250 1500:$0.7030 3000:$0.6730 7500:$0.6290
SI7405BDN-T1-GE3 DISTI # 781-SI7405BDN-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	0
SI7405BDN-T1-GE3	Vishay Intertechnologies		1627
SI7405BDN-T1-GE3 DISTI # 8181400P	Vishay Intertechnologies	TRANS MOSFET P-CH 12V 13.5AN, RL	1680	100:£0.5340 400:£0.4710 1000:£0.4310