FQPF12N60C

FQPF12N60C
Mfr. #:
FQPF12N60C
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 600V N-Ch Q-FET advance C-Series
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQPF12N60C Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
650 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
51 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
16.3 mm
Lunghezza:
10.67 mm
Serie:
FQPF12N60C
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
13 S
Tempo di caduta:
90 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
85 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
155 ns
Tempo di ritardo di accensione tipico:
30 ns
Parte # Alias:
FQPF12N60C_NL
Unità di peso:
0.080072 oz
Tags
FQPF12N60C, FQPF12N60, FQPF12N6, FQPF12N, FQPF12, FQPF1, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail
***ark
N CH MOSFET, 600V, 12A, TO-220F
*** Source Electronics
MOSFET N-CH 600V 12A TO-220F
***inecomponents.com
600V N-Channel MOSFET QFET®
***ser
MOSFETs 600V N-Ch Q-FET advance C-Series
***nell
MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:12A; Resistance, Rds On:0.65ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:48A; Power Dissipation:51W; Power, Pd:51W; Transistors, No. of:1; Voltage, Vds Max:600V
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):650mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:51W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:51W; Power Dissipation Pd:51W; Pulse Current Idm:48A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Parte # Mfg. Descrizione Azione Prezzo
FQPF12N60C
DISTI # V36:1790_06359253
ON SemiconductorLECH/600V/12A/QFET C-SERIES13
  • 10000:$0.8785
  • 5000:$0.9223
  • 2000:$0.9667
  • 1000:$1.0561
FQPF12N60C
DISTI # FQPF12N60C-ND
ON SemiconductorMOSFET N-CH 600V 12A TO-220F
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FQPF12N60CT
    DISTI # FQPF12N60CT-ND
    ON SemiconductorMOSFET N-CH 600V 12A TO-220F
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Limited Supply - Call
      FQPF12N60C
      DISTI # FQPF12N60C
      ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF12N60C)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube
      Americas - 0
      • 1000:$1.0589
      • 2000:$1.0529
      • 4000:$1.0389
      • 6000:$1.0259
      • 10000:$1.0009
      FQPF12N60C
      DISTI # FQPF12N60C
      ON SemiconductorTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF12N60C)
      RoHS: Compliant
      Min Qty: 1
      Europe - 0
        FQPF12N60C
        DISTI # 512-FQPF12N60C
        ON SemiconductorMOSFET 600V N-Ch Q-FET advance C-Series
        RoHS: Compliant
        62
        • 1:$2.6200
        • 10:$2.2200
        • 100:$1.7800
        • 500:$1.5600
        • 1000:$1.2900
        • 2000:$1.2000
        • 5000:$1.1600
        FQPF12N60CT
        DISTI # 512-FQPF12N60CT
        ON SemiconductorMOSFET N-CH/600V/12A QFET C-Series
        RoHS: Compliant
        0
          FQPF12N60C
          DISTI # 1095081
          ON Semiconductor 
          RoHS: Compliant
          0
          • 1:$3.3900
          • 10:$2.8800
          • 100:$2.3200
          • 500:$2.0100
          • 1000:$1.6800
          • 2000:$1.6700
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          Disponibilità
          Azione:
          784
          Su ordine:
          2767
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          Prezzo di riferimento (USD)
          Quantità
          Prezzo unitario
          est. Prezzo
          1
          2,62 USD
          2,62 USD
          10
          2,22 USD
          22,20 USD
          100
          1,78 USD
          178,00 USD
          500
          1,56 USD
          780,00 USD
          1000
          1,29 USD
          1 290,00 USD
          2000
          1,20 USD
          2 400,00 USD
          5000
          1,16 USD
          5 800,00 USD
          10000
          1,11 USD
          11 100,00 USD
          A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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