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IPP65R125C7XKSA1

IPP65R125C7XKSA1
Mfr. #:
IPP65R125C7XKSA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET HIGH POWER_NEW
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPP65R125C7XKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPP65R125C7XKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
650 V
Id - Corrente di scarico continua:
18 A
Rds On - Resistenza Drain-Source:
111 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
35 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
101 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Serie:
CoolMOS C7
Tipo di transistor:
1 N-Channel
Larghezza:
4.4 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
8 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
71 ns
Tempo di ritardo di accensione tipico:
14 ns
Parte # Alias:
IPP65R125C7 SP001080132
Unità di peso:
0.211644 oz
Tags
IPP65R12, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 18 A, 700 V, 3-Pin TO-220 Infineon IPP65R125C7XKSA1
***ical
Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 700V 18A 3-Pin TO-220 Tube
***ark
MOSFET, N-CH, 650V, 18A, TO-220-3
***i-Key
MOSFET N-CH 650V 18A TO220
***ukat
N-Ch 650V 18A 101W 0,125R TO220
***ronik
N-CH 650V 18A 125mOhm TO220
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 18A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:101W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 650V, 18A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.11ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:101W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Parte # Mfg. Descrizione Azione Prezzo
IPP65R125C7XKSA1
DISTI # V99:2348_06378467		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		487
  • 250:$2.8630
  • 100:$3.0470
  • 10:$3.5370
  • 1:$4.6222
IPP65R125C7XKSA1
DISTI # IPP65R125C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 18A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2500:$2.2340
  • 500:$2.7883
  • 100:$3.2754
  • 25:$3.7792
  • 10:$3.9980
  • 1:$4.4500
IPP65R125C7XKSA1
DISTI # 31593599		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		3500
  • 5:$2.0036
IPP65R125C7XKSA1
DISTI # 26197439		Infineon Technologies AGTrans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		487
  • 3:$4.6222
IPP65R125C7XKSA1
DISTI # SP001080132		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 Tube (Alt: SP001080132)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 2500
  • 1000:€1.6900
  • 100:€1.8900
  • 500:€1.8900
  • 50:€1.9900
  • 25:€2.0900
  • 10:€2.1900
  • 1:€2.3900
IPP65R125C7XKSA1
DISTI # IPP65R125C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R125C7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 3000:$1.9900
  • 5000:$1.9900
  • 2000:$2.0900
  • 1000:$2.1900
  • 500:$2.2900
IPP65R125C7XKSA1
DISTI # IPP65R125C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R125C7XKSA1)
Min Qty: 172
Container: Bulk		Americas - 0
  • 860:$1.7900
  • 1720:$1.7900
  • 516:$1.8900
  • 344:$1.9900
  • 172:$2.0900
IPP65R125C7XKSA1
DISTI # IPP65R125C7		Infineon Technologies AGTrans MOSFET N-CH 700V 18A 3-Pin TO-220 Tube - Bulk (Alt: IPP65R125C7)
Min Qty: 172
Container: Bulk		Americas - 0
  • 860:$1.9900
  • 1720:$1.9900
  • 516:$2.0900
  • 344:$2.1900
  • 172:$2.2900
IPP65R125C7XKSA1
DISTI # 726-IPP65R125C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		1
  • 1:$4.2300
  • 10:$3.5900
  • 100:$3.1200
  • 250:$2.9600
  • 500:$2.6500
  • 1000:$2.2400
  • 2500:$2.1200
IPP65R125C7
DISTI # 726-IPP65R125C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$4.2300
  • 10:$3.5900
  • 100:$3.1200
  • 250:$2.9600
  • 500:$2.6500
IPP65R125C7XKSA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		500
  • 1000:$1.9200
  • 500:$2.0200
  • 100:$2.1100
  • 25:$2.2000
  • 1:$2.3600
IPP65R125C7XKSA1
DISTI # 8977589P		Infineon Technologies AGMOSFET N-CHANNEL 650V 18A COOLMOS TO220, TU308
  • 20:£2.8900
IPP65R125C7XKSA1
DISTI # 2420507		Infineon Technologies AGMOSFET, N-CH, 650V, 18A, TO-220-3
RoHS: Compliant		0
  • 500:$3.9900
  • 250:$4.4600
  • 100:$4.7000
  • 10:$5.4100
  • 1:$6.3700
IPP65R125C7XKSA1
DISTI # XSKDRABV0051647		Infineon Technologies AG 
RoHS: Compliant		1500 in Stock0 on Order
  • 1500:$2.8000
  • 500:$3.0000
IPP65R125C7XKSA1
DISTI # IPP65R125C7		Infineon Technologies AGN-Ch 650V 18A 101W 0,125R TO220
RoHS: Compliant		496
  • 1:€6.2000
  • 10:€3.2000
  • 50:€2.2000
  • 100:€2.0200
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Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di IPP65R125C7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,23 USD
4,23 USD
10
3,59 USD
35,90 USD
100
3,12 USD
312,00 USD
250
2,96 USD
740,00 USD
500
2,65 USD
1 325,00 USD
1000
2,24 USD
2 240,00 USD
2500
2,12 USD
5 300,00 USD
5000
2,04 USD
10 200,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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