SIR418DP-T1-GE3

SIR418DP-T1-GE3
Mfr. #:
SIR418DP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIR418DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR418DP-T1-GE3 DatasheetSIR418DP-T1-GE3 Datasheet (P4-P6)SIR418DP-T1-GE3 Datasheet (P7)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SO-8
Nome depositato:
TrenchFET, PowerPAK
Confezione:
Bobina
Altezza:
1.04 mm
Lunghezza:
6.15 mm
Serie:
SIGNORE
Larghezza:
5.15 mm
Marca:
Vishay / Siliconix
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
SIR418DP-GE3
Unità di peso:
0.017870 oz
Tags
SIR418, SIR41, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronics
VISHAY SIR418DP-T1-GE3 MOSFET Transistor, N Channel, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
*** Source Electronics
Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 40V 40A PPAK SO-8
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:40A; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.005ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 40V, 40A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00415ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descrizione Azione Prezzo
SIR418DP-T1-GE3
DISTI # SIR418DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.6006
SIR418DP-T1-GE3
DISTI # SIR418DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.6628
  • 500:$0.8396
  • 100:$1.0826
  • 10:$1.3700
  • 1:$1.5500
SIR418DP-T1-GE3
DISTI # SIR418DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.6628
  • 500:$0.8396
  • 100:$1.0826
  • 10:$1.3700
  • 1:$1.5500
SIR418DP-T1-GE3
DISTI # SIR418DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 23.5A 8-Pin PowerPAK SO T/R (Alt: SIR418DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€1.1249
  • 6000:€0.8069
  • 12000:€0.6539
  • 18000:€0.5779
  • 30000:€0.5529
SIR418DP-T1-GE3
DISTI # SIR418DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 23.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR418DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.5879
  • 6000:$0.5859
  • 12000:$0.5849
  • 18000:$0.5839
  • 30000:$0.5819
SIR418DP-T1-GE3
DISTI # 35R6197
Vishay IntertechnologiesTrans MOSFET N-CH 40V 23.5A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 35R6197)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.6400
  • 25:$1.3600
  • 50:$1.2000
  • 100:$1.0300
  • 250:$0.9620
  • 500:$0.8900
  • 1000:$0.7810
SIR418DP-T1-GE3
DISTI # 35R0022
Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 40A,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00415ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.5780
  • 3000:$0.5740
  • 6000:$0.5460
  • 12000:$0.4840
SIR418DP-T1-GE3
DISTI # 35R6197
Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 40A,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00415ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,No. of Pins:8Pins , RoHS Compliant: Yes1766
  • 1:$1.6400
  • 25:$1.3600
  • 50:$1.2000
  • 100:$1.0300
  • 250:$0.9620
  • 500:$0.8900
  • 1000:$0.7810
SIR418DP-T1-GE3
DISTI # 70616562
Vishay SiliconixSIR418DP-T1-GE3 N-channel MOSFET Transistor,23 A,40 V,8-Pin PowerPAK SO
RoHS: Compliant
0
  • 300:$0.9000
  • 600:$0.8800
  • 1500:$0.8600
  • 3000:$0.8300
SIR418DP-T1-GE3
DISTI # 781-SIR418DP-GE3
Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant
1202
  • 1:$1.3700
  • 10:$1.1300
  • 100:$0.8620
  • 500:$0.7420
  • 1000:$0.6510
  • 3000:$0.6500
SIR418DP-T1-GE3
DISTI # 8141275P
Vishay IntertechnologiesTRANS MOSFET N-CH 40V 23.5A, RL2590
  • 100:£0.6680
SIR418DPT1GE3Vishay Intertechnologies 
RoHS: Compliant
Europe - 3000
    SIR418DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8Americas - 6000
      SIR418DP-T1-GE3
      DISTI # 2101462
      Vishay IntertechnologiesMOSFET, N CH, 40V, 40A, POWERPAK
      RoHS: Compliant
      0
      • 1:$2.1700
      • 10:$1.7900
      • 100:$1.3700
      • 500:$1.1800
      • 1000:$1.0400
      • 3000:$1.0300
      SIR418DP-T1-GE3
      DISTI # 1781614
      Vishay Intertechnologies 
      RoHS: Compliant
      1566
      • 1:$2.1700
      • 10:$1.7900
      • 100:$1.3700
      • 500:$1.1800
      • 1000:$1.0400
      • 3000:$1.0300
      SIR418DP-T1-GE3
      DISTI # 2101462
      Vishay IntertechnologiesMOSFET, N CH, 40V, 40A, POWERPAK
      RoHS: Compliant
      3
      • 5:£0.8760
      • 25:£0.8550
      • 100:£0.6520
      • 250:£0.6070
      • 500:£0.5620
      Immagine Parte # Descrizione
      TQL9093

      Mfr.#: TQL9093

      OMO.#: OMO-TQL9093

      RF Amplifier .6-4.2GHz Gain 19dB NF .7dB OIP3 45dBm
      SI7216DN-T1-GE3

      Mfr.#: SI7216DN-T1-GE3

      OMO.#: OMO-SI7216DN-T1-GE3

      MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
      RB168LAM100TR

      Mfr.#: RB168LAM100TR

      OMO.#: OMO-RB168LAM100TR

      Schottky Diodes & Rectifiers 100V Vr 1A Io Schottky Br Diode
      APFA3010LSEEZGKQBKC

      Mfr.#: APFA3010LSEEZGKQBKC

      OMO.#: OMO-APFA3010LSEEZGKQBKC

      Standard LEDs - SMD 3.0x1.0MM LOW CU RGB SMD
      ESR10EZPF1001

      Mfr.#: ESR10EZPF1001

      OMO.#: OMO-ESR10EZPF1001-ROHM-SEMI

      RES SMD 1K OHM 1% 0.4W 0805
      RB168LAM100TR

      Mfr.#: RB168LAM100TR

      OMO.#: OMO-RB168LAM100TR-ROHM-SEMI

      DIODE SCHOTTKY 100V 1A PMDTM
      SI7216DN-T1-GE3

      Mfr.#: SI7216DN-T1-GE3

      OMO.#: OMO-SI7216DN-T1-GE3-VISHAY

      MOSFET 2N-CH 40V 6A PPAK 1212-8
      DSC1123DL5-200.0000

      Mfr.#: DSC1123DL5-200.0000

      OMO.#: OMO-DSC1123DL5-200-0000-MICROCHIP-TECHNOLOGY

      Oscillator MEMS 200MHz ±10ppm (Stability) 15pF LVDS 52% 2.5V/3.3V 6-Pin QFN SMD Tube
      GRM31CR60J227ME11L

      Mfr.#: GRM31CR60J227ME11L

      OMO.#: OMO-GRM31CR60J227ME11L-MURATA-ELECTRONICS

      Cap Ceramic 220uF 6.3V X5R 20% Pad SMD 1206 85C T/R
      C0603C224K4RACAUTO

      Mfr.#: C0603C224K4RACAUTO

      OMO.#: OMO-C0603C224K4RACAUTO-KEMET

      Cap Ceramic 0.22uF 16V X7R 10% SMD 0603 125C Automotive T/R
      Disponibilità
      Azione:
      Available
      Su ordine:
      1989
      Inserisci la quantità:
      Il prezzo attuale di SIR418DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,36 USD
      1,36 USD
      10
      1,12 USD
      11,20 USD
      100
      0,86 USD
      86,10 USD
      500
      0,74 USD
      370,50 USD
      1000
      0,58 USD
      584,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
      Iniziare con
      Prodotti più recenti
      Top