SI7850DP-T1-E3

Mfr. #:: SI7850DP-T1-E3
Produttore:: Vishay
Descrizione:: MOSFET N-CH 60V 6.2A PPAK SO-8
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7850DP-T1-E3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7850DP-E3

Stile di montaggio: SMD/SMT

Nome depositato: TrenchFET

Pacchetto-Custodia: PowerPAKR SO-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR SO-8

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 1.8W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 60V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 6.2A (Ta)

Rds-On-Max-Id-Vgs: 22 mOhm @ 10.3A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 27nC @ 10V

Pd-Power-Dissipazione: 1.8 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 10 ns

Ora di alzarsi: 10 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 6.2 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistenza: 22 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 25 ns

Tempo di ritardo all'accensione tipico: 10 ns

Modalità canale: Aumento

Tags: SI7850DP-T1-E3, SI7850DP-T1-E, SI7850DP-T1, SI7850DP-T, SI7850DP, SI7850D, SI7850, SI785, SI78, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7850DP-T1-E3 Descrizione

***ponent Sense: Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)

***Components: On a Reel of 3000, N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO Vishay SI7850DP-T1-E3

***ied Electronics & Automation: MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ohm; ID 6.2A; PowerPAK SO-8; PD 1.8W; -55C

*** Electronics: SI7850DP-T1-E3 ; ROHS ; V ISHAY/SILICONIX ; MOSFET N-CH 60V POWERPAK 8-SOIC

***ure Electronics: Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***p One Stop Japan: Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/R

***p One Stop Global: Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R

***i-Key: MOSFET N-CH 60V 6.2A PPAK SO-8

***ser: N-Channel MOSFETs 60V 10.3A 4.5W

***: 60V, 22 MOHMS@10V, PWM

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.022Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:1.8W; No. Of Pins:8Pins Rohs Compliant: No

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10.3A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.8W; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.3A; Package / Case:SOIC PowerPAK; Power Dissipation Pd:1.8W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:6.2A; Resistance, Rds On:0.031ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:27nC; No. of Pins:8; Power Dissipation:1.8W; Power, Pd:1.8W; Power, Ptot:1.8W; Quantity, Reel:3000; Resistance, Rds on Max:0.022ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.3°C/W; Voltage, Vds Max:60V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:1V; Width, External:6.2mm; Width, Tape:12mm

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	33056In Stock	1000:$0.8743 500:$1.0552 100:$1.3567 10:$1.6880 1:$1.8700
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	33056In Stock	1000:$0.8743 500:$1.0552 100:$1.3567 10:$1.6880 1:$1.8700
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 6.2A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	3000:$0.7903
SI7850DP-T1-E3 DISTI # 30600579	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	741	64:$1.0366 32:$1.2661 16:$1.5300 9:$1.8998
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7850DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 21000	3000:$0.7739 6000:$0.7719 12000:$0.7699 18000:$0.7679 30000:$0.7659
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 2998	1:$1.2249 30:$1.1019 75:$1.0579 150:$1.0379 375:$1.0359 750:$0.9059 1500:$0.8479
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$0.9630 6000:$0.7408 9000:$0.5896 15000:$0.4981 30000:$0.4586 75000:$0.4445 150000:$0.4312
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R (Alt: SI7850DP-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 46000	3000:€1.1649 6000:€0.8359 12000:€0.6779 18000:€0.5989 30000:€0.5729
SI7850DP-T1-E3 DISTI # 61M9830	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 61M9830) RoHS: Not Compliant Min Qty: 5 Container: Ammo Pack	Americas - 0	1:$2.0300 25:$1.8500 50:$1.6800 100:$1.5000 250:$1.3500 500:$1.2000 1000:$1.1800
SI7850DP-T1-E3 DISTI # 06J8171	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 06J8171) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$2.3400 25:$2.1200 50:$1.9200 100:$1.7000 250:$1.5200 500:$1.3300 1000:$1.3100
SI7850DP-T1-E3 DISTI # 06J8171	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 10.3A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:10.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	3000	1:$2.3400 25:$2.1200 50:$1.9200 100:$1.7000 250:$1.5200 500:$1.3300 1000:$1.3100
SI7850DP-T1-E3 DISTI # 61M9830	Vishay Intertechnologies	MOSFET Transistor, N Channel, 10.3 A, 60 V, 22 mohm, 10 V, 3 V , RoHS Compliant: Yes	25279	1:$2.0300 25:$1.8500 50:$1.6800 100:$1.5000 250:$1.3500 500:$1.2000 1000:$1.1800
SI7850DP-T1-E3. DISTI # 26AC3349	Vishay Intertechnologies	N-CH 60-V (D-S) FAST SWITCHING MOSFET , ROHS COMPLIANT: NO	27000	1:$1.0700 3000:$1.0700
SI7850DP-T1-E3 DISTI # 70026127	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 0.018Ohm,ID 6.2A,PowerPAK SO-8,PD 1.8W,-55de RoHS: Compliant	5709	1:$0.9300
SI7850DP-T1-E3 DISTI # 781-SI7850DP-E3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	40175	1:$1.9500 10:$1.7700 100:$1.4200 500:$1.1100 1000:$1.0900 3000:$1.0700
SI7850DP-T1-E3	Vishay Intertechnologies	Single N-Channel 60 V 22 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant	153000Reel	3000:$0.4700
SI7850DP-T1-E3 DISTI # 7104764	Vishay Intertechnologies	MOSFET N-CH 60V 6.2A POWERPAK SO8, PK	15	5:£1.5440 30:£1.1960 150:£0.9260 750:£0.8580 1500:£0.7820
SI7850DP-T1-E3 DISTI # 7104764P	Vishay Intertechnologies	MOSFET N-CH 60V 6.2A POWERPAK SO8, RL	5	30:£1.1960 150:£0.9260 750:£0.8580 1500:£0.7820
SI7850DP-T1-E3 DISTI # C1S806000593852	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	2676	100:$1.0826 25:$1.1402 10:$1.2669
SI7850DP-T1-E3 DISTI # C1S803601192813	Vishay Intertechnologies	Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO EP T/R RoHS: Compliant	741	128:$0.7090 64:$0.8130 32:$0.9930 16:$1.2000 8:$1.4900 1:$2.4800
SI7850DP-T1-E3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK SO-8	Americas - 189000
SI7850DP-T1-E3.	Vishay Intertechnologies	MOSFET 60V 10.3A 4.5W	Americas - 1920	10:$1.4850
SI7850DP-T1-E3 DISTI # SI7850DP-T1-E3	Vishay Siliconix	Power Field-Effect Transistor, 6.2AI(D),60V,0.022ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET RoHS: Compliant	3000	3000:$0.5200
SI7850DP-T1-E3 DISTI # XSFP00000077654	Vishay Siliconix	PowerField-EffectTransistor,6.2AI(D),60V,0.022ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET RoHS: Compliant	157482	3000:$1.5100 157482:$1.3700
SI7850DP-T1-E3 DISTI # 1470136	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	27876	1:$3.0900 10:$2.8100 100:$2.2500 500:$1.7600 1000:$1.7300 3000:$1.7000
SI7850DP-T1-E3 DISTI # 1562470	Vishay Intertechnologies	MOSFET, N SO-8 REEL 3K RoHS: Compliant	0	1:$4,772.2100
SI7850DP-T1-E3 DISTI # 1470136RL	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	0	1:$3.0900 10:$2.8100 100:$2.2500 500:$1.7600 1000:$1.7300 3000:$1.7000
SI7850DP-T1-E3 DISTI # 1470136	Vishay Intertechnologies	MOSFET, N, SO-8 RoHS: Compliant	31544	5:£1.4200 25:£1.2200 100:£0.9450 250:£0.8800 500:£0.8150

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI7850DP-T1-E3 OMO.#: OMO-SI7850DP-T1-E3	MOSFET 60V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7850DP-T1-E3-CUT TAPE OMO.#: OMO-SI7850DP-T1-E3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI7850DP-T1-GE3-CUT TAPE OMO.#: OMO-SI7850DP-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI7850DP OMO.#: OMO-SI7850DP-1190	Nuovo e originale
	Mfr.#: SI7850DP-T OMO.#: OMO-SI7850DP-T-1190	Nuovo e originale
	Mfr.#: SI7850DP-T1 OMO.#: OMO-SI7850DP-T1-1190	Nuovo e originale
	Mfr.#: SI7850DP-T1-E SI7850DP- OMO.#: OMO-SI7850DP-T1-E-SI7850DP--1190	Nuovo e originale
	Mfr.#: SI7850DP-T1-E3. OMO.#: OMO-SI7850DP-T1-E3--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:10.3A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.022ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Diss
	Mfr.#: SI7850DP-T1-GE3 OMO.#: OMO-SI7850DP-T1-GE3-VISHAY	MOSFET N-CH 60V 6.2A PPAK SO-8
	Mfr.#: SI7850DP-V30328-T1-B OMO.#: OMO-SI7850DP-V30328-T1-B-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 1500
Inserisci la quantità:

Il prezzo attuale di SI7850DP-T1-E3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,70 USD~~; ~~0,70 USD~~

10: ~~0,66 USD~~; ~~6,63 USD~~

100: ~~0,63 USD~~; ~~62,78 USD~~

500: ~~0,59 USD~~; ~~296,45 USD~~

1000: ~~0,56 USD~~; ~~558,00 USD~~

Iniziare con

SI7850DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes