SI3456DDV-T1-GE3

Mfr. #:: SI3456DDV-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET N-CH 30V 6.3A 6-TSOP
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI3456DDV-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI3456DDV-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI3456DDV-GE3

Unità di peso: 0.000705 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT-23-6 Thin, TSOT-23-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: 6-TSOP

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 2.7W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: 325pF @ 15V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 6.3A (Tc)

Rds-On-Max-Id-Vgs: 40 mOhm @ 5A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Carica-Qg-Vgs: 9nC @ 10V

Pd-Power-Dissipazione: 1.7 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 13 ns

Ora di alzarsi: 13 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 5 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Resistenza: 40 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 16 ns

Tempo di ritardo all'accensione tipico: 12 ns

Modalità canale: Aumento

Tags: SI3456DDV-T1-G, SI3456DDV-T1, SI3456DDV-T, SI3456DD, SI3456D, SI3456, SI345, SI34, SI3

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3456DDV-T1-GE3 Descrizione

***ure Electronics: N-Channel 30 V 0.04 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6

***ical: Trans MOSFET N-CH 30V 6.3A 6-Pin TSOP T/R

***et Europe: Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R

***C: Trans MOSFET N-CH 30V 5A 6-Pin TSOP

***i-Key: MOSFET N-CH 30V 6.3A 6-TSOP

***ronik: N-CH 30V 6,3A 40mOhm TSOP-6

***: N-CHANNEL 30-V (D-S) MOSFET

***ark: Mosfet,n Channel,30V,6.3A,tsop6; Transistor Polarity:n Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.033Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Product Range:-Rohs Compliant: No

***nell: MOSFET,N CH,30V,6.3A,TSOP6; Transistor Polarity:N Channel; Current Id Max:5A; Drain Source Voltage Vds:30V; On State Resistance:33mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6

***ment14 APAC: MOSFET,N CH,30V,6.3A,TSOP6; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Current Id Max:5A; Power Dissipation Pd:1.7W; Voltage Vgs Max:20V

SI3456DDV-T1-GE3 Maggiori informazioni

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI3456DDV-T1-GE3 DISTI # V72:2272_09216659	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R RoHS: Compliant	1603	1000:$0.1197 500:$0.1596 250:$0.1795 100:$0.1995 25:$0.2659 10:$0.2955 1:$0.4370
SI3456DDV-T1-GE3 DISTI # SI3456DDV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 6.3A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	106730In Stock	1000:$0.1428 500:$0.1903 100:$0.2776 10:$0.4040 1:$0.5200
SI3456DDV-T1-GE3 DISTI # SI3456DDV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.3A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	106730In Stock	1000:$0.1428 500:$0.1903 100:$0.2776 10:$0.4040 1:$0.5200
SI3456DDV-T1-GE3 DISTI # SI3456DDV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 6.3A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	102000In Stock	3000:$0.1270
SI3456DDV-T1-GE3 DISTI # 26743069	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R RoHS: Compliant	1603	1000:$0.1197 500:$0.1596 250:$0.1795 100:$0.1995 68:$0.2659
SI3456DDV-T1-GE3 DISTI # SI3456DDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3456DDV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 6000	3000:$0.1119 6000:$0.1019 12000:$0.0979 18000:$0.0949 30000:$0.0909
SI3456DDV-T1-GE3 DISTI # SI3456DDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R (Alt: SI3456DDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 9000	3000:€0.1709 6000:€0.1169 12000:€0.0999 18000:€0.0929 30000:€0.0859
SI3456DDV-T1-GE3 DISTI # SI3456DDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R (Alt: SI3456DDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$0.0898 6000:$0.0863 9000:$0.0832 15000:$0.0802 30000:$0.0774 75000:$0.0761 150000:$0.0748
SI3456DDV-T1-GE3 DISTI # 87W5912	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R - Product that comes on tape, but is not reeled (Alt: 87W5912) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.1510
SI3456DDV-T1-GE3 DISTI # 87W5912	Vishay Intertechnologies	MOSFET,N CHANNEL,30V,6.3A,TSOP6,Transistor Polarity:N Channel,Continuous Drain Current Id:6.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):33mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,No. of Pins:6Pins, RoHS Compliant: Yes	220	1:$0.5520 25:$0.3730 50:$0.3130 100:$0.2520 250:$0.2270 500:$0.2020 1000:$0.1510
SI3456DDV-T1-GE3 DISTI # 90R9126	Vishay Intertechnologies	MOSFET,N CH,30V,6.3A,TSOP6,Transistor Polarity:N Channel,Drain Source Voltage Vds:30V,On Resistance Rds(on):33mohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:1.7W,Operating Temperature Range:-55°C to +150°C,Transistor , RoHS Compliant: Yes	4232	1:$0.4600 25:$0.3110 50:$0.2610 100:$0.2100 250:$0.1890 500:$0.1680 1000:$0.1260
SI3456DDV-T1-GE3. DISTI # 28AC2132	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	6000	1:$0.1160 3000:$0.1130 6000:$0.1090
SI3456DDV-T1-GE3 DISTI # 781-SI3456DDV-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs TSOP-6 RoHS: Compliant	28418	1:$0.4600 10:$0.3110 100:$0.2100 500:$0.1680 1000:$0.1260 3000:$0.1160 6000:$0.1090 9000:$0.1020 24000:$0.0940
SI3456DDV-T1-GE3	Vishay Intertechnologies	N-Channel 30 V 0.04 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant	105000Reel	3000:$0.1400 6000:$0.1380
SI3456DDV-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs TSOP-6 RoHS: Compliant	Americas - 6000	3000:$0.0940 6000:$0.0890 12000:$0.0860 24000:$0.0850
SI3456DDV-T1-GE3 DISTI # 1840419	Vishay Intertechnologies	MOSFET,N CH,30V,6.3A,TSOP6 RoHS: Compliant	4992	5:£0.2720 25:£0.2610 100:£0.1620 250:£0.1460 500:£0.1300
SI3456DDV-T1-GE3 DISTI # 1840419	Vishay Intertechnologies	MOSFET,N CH,30V,6.3A,TSOP6 RoHS: Compliant	4259	5:$0.5110 25:$0.4230 100:$0.3320 250:$0.2730 500:$0.2310 1000:$0.2190 5000:$0.2110
SI3456DDV-T1-GE3 DISTI # 1840419RL	Vishay Intertechnologies	MOSFET,N CH,30V,6.3A,TSOP6 RoHS: Compliant	0	5:$0.5110 25:$0.4230 100:$0.3320 250:$0.2730 500:$0.2310 1000:$0.2190 5000:$0.2110
SI3456DDV-T1-GE3 DISTI # XSFP00000007284	Vishay Siliconix	RoHS: Compliant	70665	3000:$0.2800 70665:$0.2545
SI3456DDV-T1-GE3 DISTI # C1S803603576392	Vishay Intertechnologies	MOSFETs	1703	250:$0.1795 100:$0.1995 25:$0.2659
SI3456DDV-T1-GE3 DISTI # C1S803601024868	Vishay Intertechnologies	MOSFETs	6000	6000:$0.1450 3000:$0.1570

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI3456DDV-T1-GE3 OMO.#: OMO-SI3456DDV-T1-GE3	MOSFET 30V Vds 20V Vgs TSOP-6
	Mfr.#: SI3456DDV-T1-E3 OMO.#: OMO-SI3456DDV-T1-E3	MOSFET 30V Vds 20V Vgs TSOP-6
	Mfr.#: SI3456DDV OMO.#: OMO-SI3456DDV-1190	Nuovo e originale
	Mfr.#: SI3456DDV-T1-E3 OMO.#: OMO-SI3456DDV-T1-E3-VISHAY	MOSFET N-CH 30V 6.3A 6TSOP
	Mfr.#: SI3456DDV-T1-GE3 OMO.#: OMO-SI3456DDV-T1-GE3-VISHAY	MOSFET N-CH 30V 6.3A 6-TSOP
	Mfr.#: SI3456DDV-T1-GT3 OMO.#: OMO-SI3456DDV-T1-GT3-1190	Nuovo e originale
	Mfr.#: SI3456DDV-TI-QE3 OMO.#: OMO-SI3456DDV-TI-QE3-1190	Nuovo e originale
	Mfr.#: SI3456DDV-T1-GE3-CUT TAPE OMO.#: OMO-SI3456DDV-T1-GE3-CUT-TAPE-1190	Nuovo e originale

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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,10 USD~~; ~~0,10 USD~~

10: ~~0,10 USD~~; ~~1,00 USD~~

100: ~~0,09 USD~~; ~~9,44 USD~~

500: ~~0,09 USD~~; ~~44,60 USD~~

1000: ~~0,08 USD~~; ~~84,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SI3456DDV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes