BSC090N03MSG

Mfr. #:: BSC090N03MSG
Produttore:: Rochester Electronics, LLC
Descrizione:: Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSC090N03MSG Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: SENSAZIONE

categoria di prodotto: FET - Single

Tags: BSC090N03MSG, BSC090N03M, BSC090N, BSC090, BSC09, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSC090N03MSGATMA1 DISTI # V72:2272_06390969	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.1938 1000:$0.2154 500:$0.2393 250:$0.2659 100:$0.2954 25:$0.4133 10:$0.4207 1:$0.4798
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10714In Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 48A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.2692
BSC090N03MSGATMA1 DISTI # 26195690	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	3000:$0.1938 1000:$0.2154 500:$0.2393 250:$0.2659 100:$0.2954 35:$0.4133
BSC090N03MSGATMA1 DISTI # 27490114	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	50000:$0.2274 20000:$0.2284 10000:$0.2293 5000:$0.2303
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP - Tape and Reel (Alt: BSC090N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	5000:$0.2399 10000:$0.2389 20000:$0.2379 30000:$0.2379 50000:$0.2369
BSC090N03MS G DISTI # BSC090N03MS G	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC090N03MS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSC090N03MSGATMA1 DISTI # SP000313120	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP (Alt: SP000313120) RoHS: Compliant Min Qty: 5000	Europe - 0	5000:€0.2849 10000:€0.2329 20000:€0.2139 30000:€0.1969 50000:€0.1829
BSC090N03MSGATMA1. DISTI # 31AC8220	Infineon Technologies AG	TRANSITIONAL MOSFETS	0	1:$0.2400 10000:$0.2390 20000:$0.2380 50000:$0.2370
BSC090N03MSGATMA1	Infineon Technologies AG	Single N-Channel 30 V 9 mOhm 18 nC OptiMOS Power Mosfet - TDSON-8 RoHS: Not Compliant	200Cut Tape/Mini-Reel	1:$0.2850 250:$0.2300 750:$0.2200 1500:$0.2150 2500:$0.2050
BSC090N03MS G DISTI # 726-BSC090N03MSG	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant	9354	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910 5000:$0.2450
BSC090N03MSGATMA1 DISTI # 726-BSC090N03MSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M RoHS: Compliant	3552	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910 5000:$0.2450
BSC090N03MSGXT DISTI # 726-BSC090N03MSGXT	Infineon Technologies AG	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M	0	5000:$0.2450
BSC090N03MSG	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	90200	1000:$0.2700 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3300
BSC090N03MSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	15000	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
BSC090N03MSGXT	Infineon Technologies AG	RoHS: Not Compliant	4770	1000:$0.2200 500:$0.2300 100:$0.2400 25:$0.2500 1:$0.2700
BSC090N03MSG	Infineon Technologies AG		2362
BSC090N03MS G	Infineon Technologies AG		30
BSC090N03MSGATMA1 DISTI # 9062940	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TDSON8, PK	825	25:£0.4010 125:£0.3020 500:£0.2720 1250:£0.2420
BSC090N03MSGATMA1 DISTI # 9062940P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 12A OPTIMOS TDSON8, RL	3275	125:£0.3020 500:£0.2720 1250:£0.2420
BSC090N03MSGATMA1 DISTI # BSC090N03MSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,43A,32W,PG-TDSON-8	4993	1:$0.5410 5:$0.4014 25:$0.3171 100:$0.2808 500:$0.2614
BSC090N03MSGATMA1 DISTI # C1S322000606326	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	250:$0.2657 100:$0.2953 25:$0.4125 10:$0.4205
BSC090N03MSGATMA1 DISTI # C1S322000241749	Infineon Technologies AG	Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.2510

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSC0901NSI OMO.#: OMO-BSC0901NSI	MOSFET N-Ch 30V 100A TDSON-8
	Mfr.#: BSC0902NS OMO.#: OMO-BSC0902NS	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
	Mfr.#: BSC090N03MSGXT OMO.#: OMO-BSC090N03MSGXT	MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
	Mfr.#: BSC0902NSS OMO.#: OMO-BSC0902NSS-1190	Nuovo e originale
	Mfr.#: BSC0904NSI OMO.#: OMO-BSC0904NSI-1190	Trans MOSFET N-CH 30V 20A 8-Pin TDSON T/R (Alt: BSC0904NSI)
	Mfr.#: BSC0906 OMO.#: OMO-BSC0906-1190	Nuovo e originale
	Mfr.#: BSC0908NSATMA1 OMO.#: OMO-BSC0908NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 34V 49A 8TDSON
	Mfr.#: BSC090N03LS OMO.#: OMO-BSC090N03LS-1190	Nuovo e originale
	Mfr.#: BSC090N03MSG OMO.#: OMO-BSC090N03MSG-1190	Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC0909NSATMA1-CUT TAPE OMO.#: OMO-BSC0909NSATMA1-CUT-TAPE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di BSC090N03MSG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,36 USD~~; ~~0,36 USD~~

10: ~~0,34 USD~~; ~~3,42 USD~~

100: ~~0,32 USD~~; ~~32,40 USD~~

500: ~~0,31 USD~~; ~~153,00 USD~~

1000: ~~0,29 USD~~; ~~288,00 USD~~

Iniziare con

BSC090N03MSG 7
BSC090N03M 8
BSC090N 13
BSC090 39
BSC09 83
BSC0 601
BSC 999

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More Newest Products

BSC090N03MSG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes