IPB009N03LGATMA1

Mfr. #:: IPB009N03LGATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB009N03LGATMA1 Scheda dati
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HTML Datasheet:: IPB009N03LGATMA1 Datasheet IPB009N03LGATMA1 Datasheet (P4-P6)IPB009N03LGATMA1 Datasheet (P7-P9)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-263-7

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 30 V

Id - Corrente di scarico continua:: 180 A

Rds On - Resistenza Drain-Source:: 700 mOhms

Vgs th - Tensione di soglia gate-source:: 1 V

Vgs - Tensione Gate-Source:: 20 V

Qg - Carica cancello:: 227 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 250 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: OptiMOS

Confezione:: Bobina

Altezza:: 4.4 mm

Lunghezza:: 10 mm

Serie:: OptiMOS 3

Tipo di transistor:: 1 N-Channel

Larghezza:: 9.25 mm

Marca:: Tecnologie Infineon

Transconduttanza diretta - Min:: 180 S

Tempo di caduta:: 22 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 14 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 103 ns

Tempo di ritardo di accensione tipico:: 26 ns

Parte # Alias:: G IPB009N03L IPB9N3LGXT SP000394657

Tags: IPB009N03LG, IPB00, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB009N03LGATMA1 Descrizione

***ure Electronics: Single N-Channel 30 V 0.95 mOhm 227 nC OptiMOS Power Mosfet - D2PAK-7

***ineon: With the new OptiMOS3 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and hot-swap application. | Summary of Features: Lowest on-state resistance; High DC and pulsed current capability; Easy to design-in | Benefits: Increased battery lifetime and system efficiency; Saving space (reducing the number of devices needed); Saving costs | Target Applications: Or-ing in power supply; Hot-swap; e-fuse; Battery management

***ment14 APAC: MOSFET, N CH, 180A, 30V, PG-TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:30V; On Resistance Rds(on):700µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:180A; Power Dissipation Pd:250W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB009N03LGATMA1 DISTI # V72:2272_06377968	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1383	1000:$1.6010 500:$1.6500 250:$1.6980 100:$1.7470 25:$1.9410 10:$2.1570 1:$2.3460
IPB009N03LGATMA1 DISTI # V36:1790_06377968	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1934In Stock	500:$2.3594 100:$2.9138 10:$3.5530 1:$3.9800
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1934In Stock	500:$2.3594 100:$2.9138 10:$3.5530 1:$3.9800
IPB009N03LGATMA1 DISTI # IPB009N03LGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 180A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	5000:$1.7663 2000:$1.8353 1000:$1.9319
IPB009N03LGATMA1 DISTI # 26194931	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1383	1000:$1.7211 500:$1.7737 250:$1.8254 100:$1.8780 25:$2.0866 10:$2.3188 4:$2.5219
IPB009N03LGXT DISTI # IPB009N03LGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB009N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	1000:$1.8076 2000:$1.7424 4000:$1.6794 6000:$1.6229 10000:$1.5940
IPB009N03LGATMA1 DISTI # SP000394657	Infineon Technologies AG	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: SP000394657) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.8900 2000:€1.5900 4000:€1.4900 6000:€1.3900 10000:€1.2900
IPB009N03LGATMA1. DISTI # 15AC3078	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:30V,On Resistance Rds(on):700µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:-,Power Dissipation Pd:250W,No. of Pins:7Pins RoHS Compliant: Yes	0	10000:$1.6000 6000:$1.6300 4000:$1.6800 2000:$1.7500 1:$1.8100
IPB009N03LGATMA1 DISTI # 726-IPB009N03LGATMA1	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	1000	1:$3.3200 10:$2.8200 100:$2.4400 250:$2.3200 500:$2.0800 1000:$1.7500 2000:$1.6600 5000:$1.6000
IPB009N03L G DISTI # 726-IPB009N03LG	Infineon Technologies AG	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant	424	1:$3.3200 10:$2.8200 100:$2.4400 250:$2.3200 500:$2.0800 1000:$1.7500 2000:$1.6600 5000:$1.6000
IPB009N03LGATMA1 DISTI # 7545406P	Infineon Technologies AG	MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL	899	500:£1.5200 250:£1.6900 50:£1.8700 10:£2.0500
IPB009N03LGATMA1 DISTI # 1775514	Infineon Technologies AG	MOSFET, N CH, 180A, 30V, PG-TO263-7 RoHS: Compliant	1886	500:£1.5300 250:£1.7000 100:£1.7900 10:£2.0600 1:£2.8800
IPB009N03LGATMA1 DISTI # 1775514	Infineon Technologies AG	MOSFET, N CH, 180A, 30V, PG-TO263-7 RoHS: Compliant	500	5000:$2.4100 2000:$2.5000 1000:$2.6400 500:$3.1300 250:$3.5000 100:$3.6800 10:$4.2500 1:$5.0000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPB009N03LGATMA1 OMO.#: OMO-IPB009N03LGATMA1	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB009N03L G OMO.#: OMO-IPB009N03L-G	MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB009N03LGATMA1 OMO.#: OMO-IPB009N03LGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 180A TO263-7
	Mfr.#: IPB009N03L OMO.#: OMO-IPB009N03L-1190	Nuovo e originale
	Mfr.#: IPB009N03L G OMO.#: OMO-IPB009N03L-G-1190	Trans MOSFET N-CH 30V 180A 7-Pin TO-263 T/R (Alt: IPB009N03L G)
	Mfr.#: IPB009N03LG OMO.#: OMO-IPB009N03LG-1190	MOSFET N-CH 30V 180A OPTIMOS3 TO263-7, RL

Disponibilità

Azione:: 900
Su ordine:: 2883
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Il prezzo attuale di IPB009N03LGATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,32 USD~~; ~~3,32 USD~~

10: ~~2,82 USD~~; ~~28,20 USD~~

100: ~~2,44 USD~~; ~~244,00 USD~~

250: ~~2,32 USD~~; ~~580,00 USD~~

500: ~~2,08 USD~~; ~~1 040,00 USD~~

Iniziare con

IPB009N03LG 3
IPB00 4
IPB0 405
IPB 1339

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IPB009N03LGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes