55GN01MA-TL-E

55GN01MA-TL-E
Mfr. #:
55GN01MA-TL-E
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
55GN01MA-TL-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
MCPH-3
Polarità del transistor:
NPN
Tensione collettore-emettitore VCEO Max:
10 V
Emettitore-tensione di base VEBO:
3 V
Serie:
55GN01MA
Confezione:
Bobina
Marca:
ON Semiconductor
Corrente continua del collettore:
70 mA
Guadagno base/collettore DC hfe min:
200
Pd - Dissipazione di potenza:
400 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Tags
55GN01M, 55GN0, 55GN, 55G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz
***r Electronics
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, NPN
***(Formerly Allied Electronics)
ON Semi 55GN01MA-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 55GN01MA-TL-E
***emi
RF Transistor, NPN Single MCP, 10 V, 70 mA, fT = 7 GHz
***enic
1Ã×A 10V 150mW 70mA 7GHz NPN +150¡Í@(Tj) SC-70 Bipolar Transistors - BJT ROHS
***(Formerly Allied Electronics)
ON Semi 2SC5226A-4-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 2SC5226A-4-TL-E
***r Electronics
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
***ure Electronics
Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER
***ment14 APAC
Transistor, RF, NPN, 10V, 7GHZ, SC-70; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:7GHz; Power
***nell
TRANS, NPN, 10V, 0.07A, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Typ Gain Bandwidth ft:7GHz; Power Dissipation Pd:150mW; DC Collector Current:70mA; DC Current Gain hFE:180; Transistor Case Style:SOT-323; No. of Pins:3
***ure Electronics
NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin SSFP tape & reel
***emi
RF Transistor, NPN Single, 10 V, 70 mA, fT = 7 GHz
***r Electronics
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, NPN
***enic
1Ã×A 10V 100mW 70mA 90@20mA5V 7GHz NPN +150¡Í@(Tj) SC-81 Bipolar Transistors - BJT ROHS
***Yang
Trans GP BJT NPN 10V 0.07A 3-Pin SSFP T/R - Tape and Reel
***nell
TRANS, NPN, HIGH F, 10V, 0.07A, SSFP; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:10V; Typ Gain Bandwidth ft:7GHz; Power Dissipation Pd:100mW; DC Collector Current:70mA; DC Current Gain hFE:200; Transistor Case Style:SC-81; No. of Pins:3
***emi
RF Transistor, NPN Single MCP, 10 V, 70 mA, fT = 7 GHz
***(Formerly Allied Electronics)
ON Semi 2SC5226A-5-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 2SC5226A-5-TL-E
***r Electronics
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
***Yang
Trans GP BJT NPN 10V 0.07A 3-Pin MCP T/R - Tape and Reel
***ark
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP / REEL
***-Wing Technology
Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 Emboss T/R
***i-Key
RF TRANS NPN 12V 7GHZ USM
***S
new, original packaged
***roFlash
Trans GP BJT NPN 12V 0.08A 3-Pin UFM Embossed T/R
***el Electronic
RF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V
***i-Key
RF TRANS NPN 12V 7GHZ UFM
***enic
1Ã×A 12V 150mW 80mA 120@20mA10V 7GHz NPN +125¡Í@(Tj) SC-59 Bipolar Transistors - BJT ROHS
***ical
Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R
***i-Key
RF TRANS NPN 12V 7GHZ SC59
Parte # Mfg. Descrizione Azione Prezzo
55GN01MA-TL-E
DISTI # 26735743
ON SemiconductorTrans RF BJT NPN 10V 0.07A 3-Pin Case MCP T/R
RoHS: Compliant
135000
  • 75000:$0.0480
  • 30000:$0.0539
  • 15000:$0.0575
  • 9000:$0.0647
55GN01MA-TL-E
DISTI # 55GN01MA-TL-EOSCT-ND
ON SemiconductorRF TRANS NPN 10V 5.5GHZ 3MCP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5979In Stock
  • 1000:$0.1003
  • 500:$0.1308
  • 100:$0.1974
  • 10:$0.3490
  • 1:$0.4700
55GN01MA-TL-E
DISTI # 55GN01MA-TL-EOSDKR-ND
ON SemiconductorRF TRANS NPN 10V 5.5GHZ 3MCP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5979In Stock
  • 1000:$0.1003
  • 500:$0.1308
  • 100:$0.1974
  • 10:$0.3490
  • 1:$0.4700
55GN01MA-TL-E
DISTI # 55GN01MA-TL-EOSTR-ND
ON SemiconductorRF TRANS NPN 10V 5.5GHZ 3MCP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 75000:$0.0564
  • 30000:$0.0635
  • 15000:$0.0677
  • 6000:$0.0762
  • 3000:$0.0846
55GN01MA-TL-E
DISTI # 55GN01MA-TL-E
ON SemiconductorTrans GP BJT NPN 10V 0.07A 3-Pin MCP T/R - Tape and Reel (Alt: 55GN01MA-TL-E)
RoHS: Compliant
Min Qty: 9000
Container: Reel
Americas - 0
  • 9000:$0.0457
  • 15000:$0.0454
  • 24000:$0.0449
  • 45000:$0.0443
  • 90000:$0.0432
55GN01MA-TL-E
DISTI # 70465750
ON SemiconductorON Semi 55GN01MA-TL-E NPN RF Bipolar Transistor,0.07 A,10 V,3-Pin MCP
RoHS: Compliant
0
  • 100:$0.0840
  • 250:$0.0790
  • 500:$0.0750
  • 1250:$0.0720
55GN01MA-TL-EON Semiconductor 
RoHS: Not Compliant
3000
  • 500:$0.0800
  • 1000:$0.0800
  • 25:$0.0900
  • 100:$0.0900
  • 1:$0.1000
55GN01MA-TL-E
DISTI # 863-55GN01MA-TL-E
ON SemiconductorBipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
RoHS: Compliant
9000
  • 1:$0.4500
  • 10:$0.2910
  • 100:$0.1250
  • 1000:$0.0960
  • 3000:$0.0730
  • 9000:$0.0650
  • 24000:$0.0610
  • 45000:$0.0540
  • 99000:$0.0520
55GN01MA-TL-E
DISTI # 8009389P
ON Semiconductor55GN01MA-TL-EBIP NPN 70MA 10V FT=5.5G, RL8450
  • 100:£0.1160
  • 250:£0.1120
  • 500:£0.1080
  • 1000:£0.0910
Immagine Parte # Descrizione
NSVF4020SG4T1G

Mfr.#: NSVF4020SG4T1G

OMO.#: OMO-NSVF4020SG4T1G

RF Bipolar Transistors BIP NPN 150MA 8V FT=16G
NSVF5488SKT3G

Mfr.#: NSVF5488SKT3G

OMO.#: OMO-NSVF5488SKT3G

RF Bipolar Transistors BIP NPN 70MA 10V F
NSVF6003SB6T1G

Mfr.#: NSVF6003SB6T1G

OMO.#: OMO-NSVF6003SB6T1G

RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
NSVF4017SG4T1G

Mfr.#: NSVF4017SG4T1G

OMO.#: OMO-NSVF4017SG4T1G

RF Bipolar Transistors BIP NPN 100MA 12V FT=10G
UJ2-MIBH-4-SMT-TR

Mfr.#: UJ2-MIBH-4-SMT-TR

OMO.#: OMO-UJ2-MIBH-4-SMT-TR

USB Connectors USB 2.0 micro B jack 5 pin Horizontal SMT
NSVF6003SB6T1G

Mfr.#: NSVF6003SB6T1G

OMO.#: OMO-NSVF6003SB6T1G-ON-SEMICONDUCTOR

RF TRANS NPN 12V 7GHZ 6CPH
ER8-120P-0.8SV-5H

Mfr.#: ER8-120P-0.8SV-5H

OMO.#: OMO-ER8-120P-0-8SV-5H-HIROSE

120 Position High-Speed Transmission Plating Thickness 0.76 �m Straight Heade
UJ2-MIBH-4-SMT-TR

Mfr.#: UJ2-MIBH-4-SMT-TR

OMO.#: OMO-UJ2-MIBH-4-SMT-TR-CUI

USB JACK 2.0, MICRO B TYPE, 5
BM23PF0.8-40DS-0.35V(895)

Mfr.#: BM23PF0.8-40DS-0.35V(895)

OMO.#: OMO-BM23PF0-8-40DS-0-35V-895--HIROSE

Nuovo e originale
NSVF4020SG4T1G

Mfr.#: NSVF4020SG4T1G

OMO.#: OMO-NSVF4020SG4T1G-ON-SEMICONDUCTOR

RF TRANS NPN 8V 16GHZ SC82FL/MCP
Disponibilità
Azione:
Available
Su ordine:
1991
Inserisci la quantità:
Il prezzo attuale di 55GN01MA-TL-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,56 USD
0,56 USD
10
0,36 USD
3,61 USD
100
0,16 USD
15,50 USD
1000
0,12 USD
119,00 USD
Iniziare con
Top