IPA65R660CFD

IPA65R660CFD
Mfr. #:
IPA65R660CFD
Produttore:
Infineon Technologies
Descrizione:
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220 Full-Pak
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPA65R660CFD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPA65R660CFD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
CoolMOS CFD2
Confezione
Tubo
Alias ​​parziali
IPA65R660CFDXK IPA65R660CFDXKSA1 SP000838284
Unità di peso
0.211644 oz
Stile di montaggio
Foro passante
Nome depositato
CoolMOS
Pacchetto-Custodia
TO-220-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
27.8 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
10 ns
Ora di alzarsi
8 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
6 A
Vds-Drain-Source-Breakdown-Voltage
700 V
Rds-On-Drain-Source-Resistenza
660 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
40 nS
Qg-Gate-Carica
22 nC
Tags
IPA65R66, IPA65R6, IPA65R, IPA65, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPA65R660CFD
DISTI # 30579289
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-220 Full-Pak
RoHS: Compliant
190
  • 100:$0.5827
IPA65R660CFDXKSA1
DISTI # IPA65R660CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 6A TO220
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$1.0262
IPA65R660CFD
DISTI # C1S322000455120
Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
190
  • 100:$0.4570
IPA65R660CFD
DISTI # IPA65R660CFDXKSA1
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R660CFDXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7679
  • 2000:$0.7399
  • 3000:$0.7129
  • 5000:$0.6889
  • 10000:$0.6769
IPA65R660CFDXKSA2
DISTI # IPA65R660CFDXKSA2
Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPA65R660CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
    IPA65R660CFD
    DISTI # 726-IPA65R660CFD
    Infineon Technologies AGMOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2
    RoHS: Compliant
    425
    • 1:$1.5700
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9330
    IPA65R660CFDXKSA2
    DISTI # 726-IPA65R660CFDXKSA
    Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant
    0
    • 1:$1.5700
    • 10:$1.3400
    • 100:$1.0700
    • 500:$0.9330
    Immagine Parte # Descrizione
    IPA65R190CFD

    Mfr.#: IPA65R190CFD

    OMO.#: OMO-IPA65R190CFD

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    MOSFET N-Ch 700V 22.4A TO220FP-3
    IPA65R420CFDXKSA2

    Mfr.#: IPA65R420CFDXKSA2

    OMO.#: OMO-IPA65R420CFDXKSA2

    MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
    IPA65R280E6XKSA1

    Mfr.#: IPA65R280E6XKSA1

    OMO.#: OMO-IPA65R280E6XKSA1-INFINEON-TECHNOLOGIES

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    IPA65R099C6

    Mfr.#: IPA65R099C6

    OMO.#: OMO-IPA65R099C6-1190

    MOSFET N-Ch 700V 115A TO220FP-3
    IPA65R190E6,65E6190

    Mfr.#: IPA65R190E6,65E6190

    OMO.#: OMO-IPA65R190E6-65E6190-1190

    Nuovo e originale
    IPA65R310CFD,65F6310

    Mfr.#: IPA65R310CFD,65F6310

    OMO.#: OMO-IPA65R310CFD-65F6310-1190

    Nuovo e originale
    IPA65R420CFD , 2SD1816T-

    Mfr.#: IPA65R420CFD , 2SD1816T-

    OMO.#: OMO-IPA65R420CFD-2SD1816T--1190

    Nuovo e originale
    IPA65R190C6

    Mfr.#: IPA65R190C6

    OMO.#: OMO-IPA65R190C6-124

    Darlington Transistors MOSFET N-Ch 700V 20.2A TO220FP-3 CoolMOS C6
    IPA65R380E6

    Mfr.#: IPA65R380E6

    OMO.#: OMO-IPA65R380E6-124

    Darlington Transistors MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS E6
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di IPA65R660CFD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,69 USD
    0,69 USD
    10
    0,65 USD
    6,51 USD
    100
    0,62 USD
    61,70 USD
    500
    0,58 USD
    291,35 USD
    1000
    0,55 USD
    548,40 USD
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