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A3G18H500-04SR3

A3G18H500-04SR3
Mfr. #:
A3G18H500-04SR3
Produttore:
NXP Semiconductors
Descrizione:
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1805-1880 MHz, 107 W Avg., 48 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A3G18H500-04SR3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A3G18H500-04SR3 DatasheetA3G18H500-04SR3 Datasheet (P4-P6)A3G18H500-04SR3 Datasheet (P7-P9)A3G18H500-04SR3 Datasheet (P10-P12)A3G18H500-04SR3 Datasheet (P13-P15)A3G18H500-04SR3 Datasheet (P16)
ECAD Model:
Maggiori informazioni:
A3G18H500-04SR3 maggiori informazioni A3G18H500-04SR3 Product Details
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Doppio canale N
Tecnologia:
si
Id - Corrente di scarico continua:
200 mA
Vds - Tensione di rottura Drain-Source:
125 V
Guadagno:
15.4 dB
Potenza di uscita:
107 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-780S-4L
Confezione:
Bobina
Frequenza operativa:
1805 MHz to 1880 MHz
Tipo:
MOSFET di potenza RF
Marca:
Semiconduttori NXP
Numero di canali:
2 Channel
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
250
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 8 V
Vgs th - Tensione di soglia gate-source:
- 2.3 V
Parte # Alias:
935351522128
Unità di peso:
0.116623 oz
Tags
A3G1, A3G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Parte # Mfg. Descrizione Azione Prezzo
A3G18H500-04SR3
DISTI # A3G18H500-04SR3-ND		NXP SemiconductorsRF MOSFET LDMOS 48V NI-780S-4L
RoHS: Not compliant
Min Qty: 250
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 250:$154.5726
A3G18H500-04SR3
DISTI # A3G18H500-04SR3		Avnet, Inc.RF Power GaN Transistor 1805MHz to 1880MHz 107W 48V 4-Pin NI-780S 250Units T/R (Alt: A3G18H500-04SR3)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Europe - 0
  • 2500:€145.0900
  • 1500:€150.3900
  • 1000:€152.0900
  • 500:€154.8900
  • 250:€157.1900
A3G18H500-04SR3
DISTI # A3G18H500-04SR3		Avnet, Inc.RF Power GaN Transistor 1805MHz to 1880MHz 107W 48V 4-Pin NI-780S 250Units T/R - Tape and Reel (Alt: A3G18H500-04SR3)
RoHS: Compliant
Min Qty: 250
Container: Reel		Americas - 0
  • 2500:$147.7900
  • 1500:$150.6900
  • 1000:$156.3900
  • 500:$162.6900
  • 250:$169.3900
A3G18H500-04SR3
DISTI # 771-A3G18H500-04SR3		NXP SemiconductorsRF MOSFET Transistors A3G18H500-04S/CFM4F///REEL 13 Q2 NDP
RoHS: Compliant		0
  • 250:$143.7800
A3G18H500-04SR3
DISTI # A3G18H500-04SR3		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Not Compliant		0
  • 250:$153.9600
Immagine Parte # Descrizione
A3G18H500-04SR3

Mfr.#: A3G18H500-04SR3

OMO.#: OMO-A3G18H500-04SR3

 RF MOSFET Transistors Airfast RF Power GaN Transistor, 1805-1880 MHz, 107 W Avg., 48 V
A3G18H500-04S

Mfr.#: A3G18H500-04S

OMO.#: OMO-A3G18H500-04S-1190

 Nuovo e originale
A3G18H500-04SR3

Mfr.#: A3G18H500-04SR3

OMO.#: OMO-A3G18H500-04SR3-NXP-SEMICONDUCTORS

 RF MOSFET LDMOS 48V NI-780S-4L
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di A3G18H500-04SR3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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