RN1971TE85LF

Mfr. #:: RN1971TE85LF
Produttore:: Toshiba
Descrizione:: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: RN1971TE85LF Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: RN1971TE85LF Datasheet RN1971TE85LF Datasheet (P4-P6)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Toshiba

Categoria di prodotto:: Transistor bipolari - Pre-polarizzati

RoHS:: Y

Configurazione:: Dual

Polarità del transistor:: NPN

Resistenza di ingresso tipica:: 10 kOhms

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-363-6

Guadagno base/collettore DC hfe min:: 120

Tensione collettore-emettitore VCEO Max:: 50 V

Corrente continua del collettore:: 100 mA

Pd - Dissipazione di potenza:: 200 mW

Serie:: RN1971

Confezione:: Bobina

Emettitore-tensione di base VEBO:: 5 V

Marca:: Toshiba

Corrente massima del collettore CC:: 100 mA

Tipologia di prodotto:: BJT - Transistor bipolari - Prepolarizzati

Quantità confezione di fabbrica:: 3000

sottocategoria:: transistor

Unità di peso:: 0.000212 oz

Tags: RN1971T, RN1971, RN197, RN19, RN1

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN1971TE85LF Descrizione

***et: Trans Digital BJT NPN 50V 100mA 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***ure Electronics: DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6

***(Formerly Allied Electronics): NPN Biased Signal Dual Transistor SOT363 | Diodes Inc DDC114YU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***nell: TRANS, RF, 50V, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: DDC144EU Series 50 V 100 mA NPN Surface Mount Dual Transistor - SOT-363-6

***ow.cn: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***ark: Transistor Polarity:Single NPN; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:10kohm; No. of Pins:6 Pin; MSL:- RoHS Compliant: Yes

***p One Stop Global: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

***ure Electronics: DCX143TU Series 50V 100 mA Small Signal Complementary Pre-Biased Dual Transistor

***ark: Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DCX143TU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMH3N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88

***ark: Transistor Dual, Npn/npn, Um6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMH3N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ure Electronics: UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SOT-363

***ical: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***ment14 APAC: Transistor DUAL UM6 PNP/NPN; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Current

***ark: TRANSISTOR DUAL UM6 PNP/NPN; Transistor Type:General Purpose; Transistor Polarity:NPN / PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:150mW; Min ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD6N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***: TRANS US6 PLN (LF) 200MW

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
RN1971TE85LF DISTI # RN1971TE85LFTR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.0630
RN1971TE85LF DISTI # RN1971TE85LFCT-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
RN1971TE85LF DISTI # RN1971TE85LFDKR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
RN1971TE85LF DISTI # 757-RN1971TE85LF	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V RoHS: Compliant	0	1:$0.3900 10:$0.2170 100:$0.0930 1000:$0.0720 3000:$0.0540 9000:$0.0480 24000:$0.0450 45000:$0.0400 99000:$0.0390

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: RN1971TE85LF OMO.#: OMO-RN1971TE85LF	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
	Mfr.#: RN1971FS(TPL3) OMO.#: OMO-RN1971FS-TPL3--123	Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 10Kohms
	Mfr.#: RN1971TE85LF OMO.#: OMO-RN1971TE85LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
	Mfr.#: RN1971FE(TE85LF)CT-ND OMO.#: OMO-RN1971FE-TE85LF-CT-ND-1190	Nuovo e originale
	Mfr.#: RN1971FE(TE85LF)DKR-ND OMO.#: OMO-RN1971FE-TE85LF-DKR-ND-1190	Nuovo e originale
	Mfr.#: RN1971FE(TE85LF)TR-ND OMO.#: OMO-RN1971FE-TE85LF-TR-ND-1190	Nuovo e originale
	Mfr.#: RN1971TE85LFCT-ND OMO.#: OMO-RN1971TE85LFCT-ND-1190	Nuovo e originale
	Mfr.#: RN1971TE85LFDKR-ND OMO.#: OMO-RN1971TE85LFDKR-ND-1190	Nuovo e originale
	Mfr.#: RN1971TE85LFTR-ND OMO.#: OMO-RN1971TE85LFTR-ND-1190	Nuovo e originale
	Mfr.#: RN1971FE OMO.#: OMO-RN1971FE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 4000
Inserisci la quantità:

Il prezzo attuale di RN1971TE85LF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,39 USD~~; ~~0,39 USD~~

10: ~~0,22 USD~~; ~~2,17 USD~~

100: ~~0,09 USD~~; ~~9,30 USD~~

1000: ~~0,07 USD~~; ~~72,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

RN1971T 4
RN1971 9
RN197 30
RN19 335
RN1 1899

RN1971TE85LF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes