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IRL3713PBF

IRL3713PBF
Mfr. #:
IRL3713PBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRL3713PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL3713PBF DatasheetIRL3713PBF Datasheet (P4-P6)IRL3713PBF Datasheet (P7-P9)IRL3713PBF Datasheet (P10-P12)
ECAD Model:
Maggiori informazioni:
IRL3713PBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-220-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
200 A
Rds On - Resistenza Drain-Source:
4 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
75 nC
Pd - Dissipazione di potenza:
200 W
Configurazione:
Separare
Confezione:
Tubo
Altezza:
15.65 mm
Lunghezza:
10 mm
Tipo di transistor:
1 N-Channel
Larghezza:
4.4 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Parte # Alias:
SP001567066
Unità di peso:
0.211644 oz
Tags
IRL3713, IRL371, IRL37, IRL3, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
***ure Electronics
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***p One Stop Japan
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ment14 APAC
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRL3713PBF
DISTI # V99:2348_13892846		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		35
  • 10000:$0.9391
  • 5000:$0.9767
  • 2000:$1.0173
  • 1000:$1.0965
  • 500:$1.2750
  • 100:$1.4716
  • 10:$1.8729
  • 1:$2.4139
IRL3713PBF
DISTI # V36:1790_13892846		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		0
    IRL3713PBF
    DISTI # IRL3713PBF-ND    		Infineon Technologies AGMOSFET N-CH 30V 260A TO-220AB
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		971In Stock
    • 5000:$1.0761
    • 3000:$1.1175
    • 1000:$1.2002
    • 100:$1.7631
    • 25:$2.0692
    • 10:$2.1940
    • 1:$2.4400
    IRL3713PBF
    DISTI # 33623233    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		4450
    • 50:$1.3531
    IRL3713PBF
    DISTI # 32139747    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		2600
    • 100:$0.9430
    • 11:$0.9900
    IRL3713PBF
    DISTI # 30614044    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		450
    • 100:$1.7085
    • 15:$1.7212
    IRL3713PBF
    DISTI # 26198447    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		35
    • 10000:$0.9391
    • 5000:$0.9767
    • 2000:$1.0173
    • 1000:$1.0965
    • 500:$1.2750
    • 100:$1.4716
    • 10:$1.8729
    • 8:$2.1945
    IRL3713PBF
    DISTI # IRL3713PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB (Alt: IRL3713PBF)
    RoHS: Compliant
    Min Qty: 1000    		Asia - 5000
    • 2000:$0.6388
    • 1000:$0.6394
    IRL3713PBF
    DISTI # SP001567066    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB (Alt: SP001567066)
    RoHS: Compliant
    Min Qty: 1    		Europe - 3050
    • 1000:€0.9309
    • 500:€0.9649
    • 100:€1.0029
    • 50:€1.0429
    • 25:€1.0859
    • 10:€1.1849
    • 1:€1.3039
    IRL3713PBF
    DISTI # IRL3713PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRL3713PBF)
    RoHS: Compliant
    Min Qty: 343
    Container: Bulk    		Americas - 0
    • 3430:$0.9279
    • 1715:$0.9459
    • 1029:$0.9829
    • 686:$1.0219
    • 343:$1.0649
    IRL3713PBF
    DISTI # IRL3713PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL3713PBF)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$0.7639
    • 6000:$0.7779
    • 4000:$0.8049
    • 2000:$0.8359
    • 1000:$0.8669
    IRL3713PBF
    DISTI # 38K3061    		Infineon Technologies AGMOSFET Transistor, N Channel, 200 A, 30 V, 3 mohm, 10 V, 2.5 V RoHS Compliant: Yes0
    • 5000:$0.9890
    • 2500:$1.0300
    • 1000:$1.1100
    • 500:$1.3300
    • 100:$1.5300
    • 10:$1.9100
    • 1:$2.2400
    IRL3713PBF
    DISTI # 70017434    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 260A,TO-220AB,PD 330W,-55de
    RoHS: Compliant    		0
    • 1:$3.0200
    • 10:$2.6600
    • 100:$2.3300
    • 500:$2.0200
    • 1000:$1.7800
    IRL3713PBF
    DISTI # 942-IRL3713PBF    		Infineon Technologies AGMOSFET MOSFT 30V 200A 3mOhm 75nC Log LvlAB
    RoHS: Compliant    		991
    • 1:$2.2200
    • 10:$1.8900
    • 100:$1.5100
    • 500:$1.3200
    • 1000:$1.1000
    • 2000:$1.0200
    • 5000:$0.9790
    IRL3713PBFInfineon Technologies AGSingle N-Channel 30 V 4 mOhm 110 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		7377Tube
    • 25:$1.6200
    • 100:$1.0300
    • 250:$0.9450
    • 500:$0.8800
    • 1000:$0.8250
    IRL3713PBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		48
    • 1000:$0.9600
    • 500:$1.0100
    • 100:$1.0500
    • 25:$1.1000
    • 1:$1.1800
    IRL3713PBF
    DISTI # 8303293    		Infineon Technologies AGHEXFET N-CH MOSFET 260A 30V TO-220AB, PK40
    • 500:£0.9420
    • 250:£1.0380
    • 100:£1.0880
    • 50:£1.3580
    • 5:£1.7040
    IRL3713PBF
    DISTI # 8303293P    		Infineon Technologies AGHEXFET N-CH MOSFET 260A 30V TO-220AB, TU35
    • 500:£0.9420
    • 250:£1.0380
    • 100:£1.0880
    • 50:£1.3580
    IRL3713PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***48
    • 47:$1.4300
    • 14:$1.6250
    • 1:$2.6000
    IRL3713PBF
    DISTI # 8659788    		Infineon Technologies AGMOSFET, N, 30V, 200A, TO-220
    RoHS: Compliant    		0
    • 500:$2.0300
    • 100:$2.3300
    • 10:$2.9100
    • 1:$3.4200
    IRL3713PBF
    DISTI # 8659788    		Infineon Technologies AGMOSFET, N, 30V, 200A, TO-2200
    • 500:£1.0200
    • 250:£1.1000
    • 100:£1.1700
    • 10:£1.4700
    • 1:£1.9500
    IRL3713PBF
    DISTI # XSKDRABS0023784    		Infineon Technologies AGInsulatedGateBipolarTransistor,40AI(C),600VV(BR)CES,N-Channel,TO-247AC
    RoHS: Compliant    		2450 in Stock0 on Order
    • 2450:$1.4040
    • 550:$1.5000
    IRL3713PBF
    DISTI # XSFP00000002723    		Infineon Technologies AGPower Field-Effect Transistor, 49AI(D),55V,0.0175ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,TO-262AA
    RoHS: Compliant    		3983 in Stock0 on Order
    • 3983:$1.8700
    • 98:$2.0600
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    Disponibilità
    Azione:
    989
    Su ordine:
    2972
    Inserisci la quantità:
    Il prezzo attuale di IRL3713PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,22 USD
    2,22 USD
    10
    1,89 USD
    18,90 USD
    100
    1,51 USD
    151,00 USD
    500
    1,32 USD
    660,00 USD
    1000
    1,10 USD
    1 100,00 USD
    2000
    1,02 USD
    2 040,00 USD
    5000
    0,98 USD
    4 895,00 USD
    10000
    0,94 USD
    9 410,00 USD
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