STGW30M65DF2

STGW30M65DF2
Mfr. #:
STGW30M65DF2
Produttore:
STMicroelectronics
Descrizione:
TRENCH GATE FIELD-STOP IGBT M SE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGW30M65DF2 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGW30M65DF2 maggiori informazioni STGW30M65DF2 Product Details
Attributo del prodotto
Valore attributo
Produttore
STMicroelectronics
categoria di prodotto
IGBT - Singolo
Serie
-
Confezione
Tubo
Pacchetto-Custodia
TO-247-3
Tipo di ingresso
Standard
Tipo di montaggio
Foro passante
Pacchetto-dispositivo-fornitore
TO-247
Potenza-Max
258W
Reverse-Tempo di ripristino-trr
140ns
Corrente-Collettore-Ic-Max
60A
Tensione-Collettore-Emettitore-Ripartizione-Max
650V
Tipo IGBT
Sosta sul campo di trincea
Corrente-Collettore-Impulsato-Icm
120A
Vce-su-Max-Vge-Ic
2V @ 15V, 30A
Energia di commutazione
300μJ (on), 960μJ (off)
Gate-Charge
80nC
Td-on-off-25°C
31.6ns/115ns
Condizione di test
400V, 30A, 10 Ohm, 15V
Tags
STGW30, STGW3, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Parte # Mfg. Descrizione Azione Prezzo
STGW30M65DF2
DISTI # V99:2348_17623290
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
427
  • 250:$2.2420
  • 100:$2.3609
  • 10:$2.7260
  • 1:$3.5167
STGW30M65DF2
DISTI # 497-16485-5-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube
195In Stock
  • 2520:$1.7066
  • 510:$2.1247
  • 120:$2.4959
  • 30:$2.8800
  • 10:$3.0460
  • 1:$3.3900
STGW30M65DF2
DISTI # 25947923
STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
427
  • 250:$2.1040
  • 100:$2.1980
  • 10:$2.4770
  • 4:$3.1009
STGW30M65DF2
DISTI # STGW30M65DF2
STMicroelectronicsN-channel STripFET > 30 V to 350 V (Alt: STGW30M65DF2)
RoHS: Compliant
Min Qty: 30
Europe - 600
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 30:€1.6900
  • 60:€1.6900
STGW30M65DF2
DISTI # STGW30M65DF2
STMicroelectronicsN-channel STripFET > 30 V to 350 V - Tape and Reel (Alt: STGW30M65DF2)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.6900
  • 10000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1000:$1.9900
STGW30M65DF2
DISTI # 84Y8611
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.5300
STGW30M65DF2.
DISTI # 30AC0855
STMicroelectronicsPTD HIGH VOLTAGE0
  • 6000:$1.6900
  • 4000:$1.7900
  • 2000:$1.8900
  • 1:$1.9900
STGW30M65DF2
DISTI # 511-STGW30M65DF2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
RoHS: Compliant
514
  • 1:$3.2200
  • 10:$2.7400
  • 100:$2.3700
  • 250:$2.2500
  • 500:$2.0200
  • 1000:$1.7000
  • 2500:$1.6200
  • 5000:$1.5600
Immagine Parte # Descrizione
STGW30NC120HD

Mfr.#: STGW30NC120HD

OMO.#: OMO-STGW30NC120HD

IGBT Transistors N-CHANNEL IGBT
STGW30V60DF

Mfr.#: STGW30V60DF

OMO.#: OMO-STGW30V60DF

IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB

IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
STGW30H65FB

Mfr.#: STGW30H65FB

OMO.#: OMO-STGW30H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
STGW30N120KD

Mfr.#: STGW30N120KD

OMO.#: OMO-STGW30N120KD

IGBT Transistors 30 A - 1200 V Rugged IGBT
STGW30H60DFB

Mfr.#: STGW30H60DFB

OMO.#: OMO-STGW30H60DFB-STMICROELECTRONICS

IGBT 600V 60A 260W TO247
STGW30V60DF

Mfr.#: STGW30V60DF

OMO.#: OMO-STGW30V60DF-STMICROELECTRONICS

IGBT Transistors 600V 30A High Speed Trench Gate IGBT
STGW30NC60KD GW30NC60KD

Mfr.#: STGW30NC60KD GW30NC60KD

OMO.#: OMO-STGW30NC60KD-GW30NC60KD-1190

Nuovo e originale
STGW30NC60KD,STGW38IH130

Mfr.#: STGW30NC60KD,STGW38IH130

OMO.#: OMO-STGW30NC60KD-STGW38IH130-1190

Nuovo e originale
STGW30NC60KD,STGW50NC60W

Mfr.#: STGW30NC60KD,STGW50NC60W

OMO.#: OMO-STGW30NC60KD-STGW50NC60W-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di STGW30M65DF2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,30 USD
2,30 USD
10
2,18 USD
21,80 USD
100
2,07 USD
206,55 USD
500
1,95 USD
975,40 USD
1000
1,84 USD
1 836,00 USD
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