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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SQM200JB-68R | YAGEO Corporation | 8000 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SQM200N04-1m7L_GE3 OMO.#: OMO-SQM200N04-1M7L-GE3-82F |
MOSFET 40V 200A 375 AEC-Q101 Qualified |
|
Mfr.#: SQM200JB-11R OMO.#: OMO-SQM200JB-11R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-36K OMO.#: OMO-SQM200JB-36K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-56K OMO.#: OMO-SQM200JB-56K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-91R OMO.#: OMO-SQM200JB-91R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-10K OMO.#: OMO-SQM200JB-10K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-18R OMO.#: OMO-SQM200JB-18R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200N04-1M7L_GE3 |
MOSFET N-CH 40V 200A TO-263 |
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|
Mfr.#: SQM200JB-0R39 OMO.#: OMO-SQM200JB-0R39-YAGEO |
RES WW 2W 5% TH |
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Mfr.#: SQM200N041M1LGE3 OMO.#: OMO-SQM200N041M1LGE3-1190 |
Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
