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SI8461DB-T2-E1

SI8461DB-T2-E1
Mfr. #:
SI8461DB-T2-E1
Produttore:
Vishay
Descrizione:
MOSFET P-CH 20V MICROFOOT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI8461DB-T2-E1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI8461DB-T2-E1 DatasheetSI8461DB-T2-E1 Datasheet (P4-P6)SI8461DB-T2-E1 Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Vishay Siliconix
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
4-XFBGA, CSPBGA
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
4-Microfoot
Configurazione
Separare
Tipo FET
MOSFET Canale P, ossido di metallo
Potenza-Max
780mW
Tipo a transistor
1 P-Channel
Drain-to-Source-Voltage-Vdss
20V
Ingresso-Capacità-Ciss-Vds
610pF @ 10V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
-
Rds-On-Max-Id-Vgs
100 mOhm @ 1.5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Carica-Qg-Vgs
24nC @ 8V
Pd-Power-Dissipazione
1.8 W
Massima temperatura di esercizio
+ 85 C
Temperatura di esercizio minima
- 40 C
Tempo di caduta
10 ns
Ora di alzarsi
25 ns
Vgs-Gate-Source-Voltage
8 V
Id-Continuo-Scarico-Corrente
- 3.7 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Rds-On-Drain-Source-Resistenza
136 mOhms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
35 ns
Tempo di ritardo all'accensione tipico
15 ns
Qg-Gate-Carica
9.5 nC
Transconduttanza diretta-Min
7 S
Tags
SI8461D, SI8461, SI846, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
SI8461DB-T2-E1
DISTI # V72:2272_09216563		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R
RoHS: Compliant		788
  • 75000:$0.2259
  • 30000:$0.2265
  • 15000:$0.2290
  • 6000:$0.2329
  • 3000:$0.2344
  • 1000:$0.2451
  • 500:$0.2655
  • 250:$0.3049
  • 100:$0.3317
  • 50:$0.3570
  • 25:$0.4267
  • 10:$0.4364
  • 1:$0.5067
SI8461DB-T2-E1
DISTI # SI8461DB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2392
SI8461DB-T2-E1
DISTI # SI8461DB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI8461DB-T2-E1
    DISTI # SI8461DB-T2-E1DKR-ND    		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI8461DB-T2-E1
      DISTI # 25790142      		Vishay IntertechnologiesTrans MOSFET P-CH 20V 2.5A 4-Pin Micro Foot T/R
      RoHS: Compliant      		788
      • 500:$0.2655
      • 250:$0.3049
      • 100:$0.3317
      • 50:$0.3570
      • 34:$0.4267
      SI8461DB-T2-E1
      DISTI # 35R6249      		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Product Range:- , RoHS Compliant: Yes0
        SI8461DB-T2-E1
        DISTI # 35R0088        		Vishay IntertechnologiesMOSFET, P-CH, -20V, -3.7A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V , RoHS Compliant: Yes0
          SI8461DB-T2-E1.
          DISTI # 15AC0305          		Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):100mohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:780mW,No. of Pins:4Pins , RoHS Compliant: No0
            SI8461DB-T2-E1
            DISTI # 70617007            		Vishay SiliconixSI8461DB-T2-E1 P-channel MOSFET Transistor,3 A,20 V,4-Pin MICRO FOOT
            RoHS: Compliant            		0
            • 300:$0.4500
            • 600:$0.4000
            • 1500:$0.3500
            • 3000:$0.3200
            SI8461DB-T2-E1
            DISTI # 781-SI8461DB-E1            		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs MICRO FOOT 1 x 1
            RoHS: Compliant            		1314
            • 1:$0.6000
            • 10:$0.4790
            • 100:$0.3640
            • 500:$0.3000
            • 1000:$0.2510
            • 3000:$0.2500
            SI8461DB-T2-E1Vishay Siliconix2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET3033
            • 1100:$0.1625
            • 232:$0.1820
            • 1:$0.5200
            SI8461DB-T2-E1Vishay Intertechnologies2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET2400
            • 2223:$0.3150
            • 445:$0.3600
            • 1:$0.9000
            SI8461DBT2E1Vishay Intertechnologies 
            RoHS: Compliant            		Europe - 3000
              SI8461DB-T2-E1Vishay IntertechnologiesINSTOCK1140
                SI8461DB-T2-E1
                DISTI # C1S803601645333                		Vishay IntertechnologiesMOSFETs
                RoHS: Compliant                		788
                • 100:$0.3340
                • 50:$0.3610
                • 25:$0.4286
                • 10:$0.4384
                SI8461DB-T2-E1
                DISTI # 1781671                		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A
                RoHS: Compliant                		0
                • 20:$0.8620
                • 100:$0.7140
                • 500:$0.5590
                • 1000:$0.4600
                • 2500:$0.3910
                • 5000:$0.3700
                SI8461DB-T2-E1
                DISTI # 1781671                		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 3.7A
                RoHS: Compliant                		0
                • 3000:£0.2230
                Immagine Parte # Descrizione
                SI8461DB-T2-E1.

                Mfr.#: SI8461DB-T2-E1.

                OMO.#: OMO-SI8461DB-T2-E1--1190

                		 Transistor Polarity:P Channel, Continuous Drain Current Id:-3.7A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1V, Power D
                SI8461DB

                Mfr.#: SI8461DB

                OMO.#: OMO-SI8461DB-1190

                		 Nuovo e originale
                SI8461DB-T2-E1

                Mfr.#: SI8461DB-T2-E1

                OMO.#: OMO-SI8461DB-T2-E1-VISHAY

                		 MOSFET P-CH 20V MICROFOOT
                Disponibilità
                Azione:
                Available
                Su ordine:
                1500
                Inserisci la quantità:
                Il prezzo attuale di SI8461DB-T2-E1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
                Prezzo di riferimento (USD)
                Quantità
                Prezzo unitario
                est. Prezzo
                1
                0,24 USD
                0,24 USD
                10
                0,23 USD
                2,32 USD
                100
                0,22 USD
                21,94 USD
                500
                0,21 USD
                103,60 USD
                1000
                0,20 USD
                195,00 USD
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