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FGY40T120SMD

FGY40T120SMD
Mfr. #:
FGY40T120SMD
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors FS2TIGBT TO247 40A 1200V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGY40T120SMD Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGY40T120SMD maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1.2 kV
Tensione di saturazione collettore-emettitore:
2 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
882 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FGY40T120SMD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
40 A
Marca:
ON Semiconductor / Fairchild
Corrente di dispersione gate-emettitore:
+/- 400 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.269105 oz
Tags
FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 80A 882000mW 3-Pin(3+Tab) Power TO-247 T/R
***ark
1200V 40A FS2 Trench IGBT - 3LD, POWER TO247, NON JEDEC, LONG LEAD
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40T120SMD Series 1200 V 80 A 555 W FS Trench IGBT -TO247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***icroelectronics
40 A, 1200 V short circuit rugged IGBT with Ultrafast diode
***et
Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247
*** Electronic Components
IGBT Transistors 40A 1200V short circuit rugged IGBT
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***icroelectronics
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
H Series 600 V 40 A Through Hole 468 W Trench Gate Field-Stop IGBT - TO-247-3
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247
***ronik
IGBT 1200V 40A 2,1V TO-247 long
***icroelectronics SCT
Trench gate field-stop IGBT, TO-247 long leads, Tube
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
PTD HIGH VOLTAGE ROHS COMPLIANT: YES
***ical
Trans IGBT Chip N-CH 1200V 80A 350000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 1200V IGBT GEN8
***or
IGBT WITH ULTRAFAST SOFT RECOVER
***ark
TUBE / G8, 1200V, 50A, COPAK-247AC
***el Electronic
CAP CER 5PF 100V C0G/NP0 RADIAL
***p One Stop Global
Trans IGBT Chip N-CH 1200V 80A 535000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 1.2KV, 80A, 175DEG C, 535W;
***r Electronics
Insulated Gate Bipolar Transistor
***ark
IGBT, SINGLE, N CHANNEL, 1.2KV, 80A, TO-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2V; Power Dissipation:535W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°CRoHS Compliant: Yes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGx40T120SMD Field Stop Trench IGBTs
ON Semiconductor FGY40T120SMD Field Stop (FS) Trench IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance for hard switching applications. Typical applications include solar inverters, UPS, welder, and Power Factor Correction (PFC).
1200V Field Stop Trench IGBTs
ON Semiconductor 1200V field stop trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operate at high switching frequencies., and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. These products are available in TO-247-3,  TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.
Parte # Mfg. Descrizione Azione Prezzo
FGY40T120SMD
DISTI # V99:2348_14141774		ON Semiconductor1200V 40A FS2 TRENCH IGBT720
  • 250:$7.4060
  • 100:$8.0200
  • 25:$9.1250
  • 10:$9.4560
  • 1:$10.4550
FGY40T120SMD
DISTI # FGY40T120SMD-ND		ON SemiconductorIGBT 1200V 80A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 450:$8.5548
  • 10:$10.7570
  • 1:$11.8800
FGY40T120SMD
DISTI # 31314733		ON Semiconductor1200V 40A FS2 TRENCH IGBT720
  • 250:$7.4060
  • 100:$8.0200
  • 25:$9.1250
  • 10:$9.4560
  • 1:$10.4550
FGY40T120SMD
DISTI # 31008286		ON Semiconductor1200V 40A FS2 TRENCH IGBT450
  • 450:$7.6128
FGY40T120SMD
DISTI # FGY40T120SMD		ON Semiconductor1200V 40A FS2 TRENCH IGBT - Rail/Tube (Alt: FGY40T120SMD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$5.9900
  • 900:$5.9900
  • 1800:$5.8900
  • 2700:$5.8900
  • 4500:$5.6900
FGY40T120SMD
DISTI # 512-FGY40T120SMD		ON SemiconductorIGBT Transistors FS2TIGBT TO247 40A 1200V
RoHS: Compliant		0
  • 1:$11.0900
  • 10:$10.0300
  • 25:$9.5600
  • 100:$8.3000
  • 250:$7.9300
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OMO.#: OMO-STF22NM60N-STMICROELECTRONICS

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Disponibilità
Azione:
439
Su ordine:
2422
Inserisci la quantità:
Il prezzo attuale di FGY40T120SMD è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
11,09 USD
11,09 USD
10
10,03 USD
100,30 USD
25
9,56 USD
239,00 USD
100
8,30 USD
830,00 USD
250
7,93 USD
1 982,50 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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