FQT4N25TF

Mfr. #:: FQT4N25TF
Produttore:: ON Semiconductor / Fairchild
Descrizione:: MOSFET 250V Single
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FQT4N25TF Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: ON Semiconductor

Categoria di prodotto:: MOSFET

RoHS:: E

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: SOT-223-4

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 250 V

Id - Corrente di scarico continua:: 830 mA

Rds On - Resistenza Drain-Source:: 1.75 Ohms

Vgs - Tensione Gate-Source:: 30 V

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 2.5 W

Configurazione:: Separare

Modalità canale:: Aumento

Confezione:: Bobina

Altezza:: 1.8 mm

Lunghezza:: 6.5 mm

Serie:: FQT4N25

Tipo di transistor:: 1 N-Channel

Tipo:: MOSFET

Larghezza:: 3.5 mm

Marca:: ON Semiconductor / Fairchild

Transconduttanza diretta - Min:: 1.28 S

Tempo di caduta:: 22 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 45 ns

Quantità confezione di fabbrica:: 4000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 6.4 ns

Tempo di ritardo di accensione tipico:: 6.8 ns

Unità di peso:: 0.003951 oz

Tags: FQT4N25, FQT4, FQT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQT4N25TF Descrizione

***emi: Power MOSFET, N-Channel, QFET®, 250 V, 0.83 A, 1.75 Ω, SOT-223

*** Source Electronics: Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223

***ure Electronics: N-Channel 250 V 1.75 Ohm Surface Mount Mosfet - SOT-223

***nell: MOSFET, N-CH, 250V, 0.83A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 830mA; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 1.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***(Formerly Allied Electronics): IRFL210TRPBF N-channel MOSFET Transistor; 0.96 A; 200 V; 3 + Tab-Pin SOT-223

***ure Electronics: Single N-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R

*** Stop Electro: Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2 W

***ical: Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223

***ment14 APAC: MOSFET, N, 200V, 0.96A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:960mA; Source Voltage Vds:200V; On Resistance

***SIT Distribution GmbH: Small Signal Field-Effect Transistor, 0.96A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***nell: MOSFET, N, 200V, 0.96A, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 960mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 960mA; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 60°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 7.7A; SMD Marking: FL210; Termination Type: Surface Mount Device; Voltage Vds: 200V; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

***(Formerly Allied Electronics): Transistor, P-channel, QFET MOSFET, -250V, -0.55A, 4.0 Ohm, SOT-223 | ON Semiconductor FQT2P25TF

***et: Trans MOSFET P-CH 250V 0.55A 4-Pin(3+Tab) SOT-223 T/R

***emi: P-Channel QFET® MOSFET -250 V, -0.55 A, 4.0 Ω

***ure Electronics: 250V 0.55A 4OHM P-Channel SOT-223 Mosfet

***ark: Mosfet, P-Ch, -250V, -0.55A, Sot-223; Transistor Polarity:p Channel; Continuous Drain Current Id:-550Ma; Drain Source Voltage Vds:-250V; On Resistance Rds(On):3.15Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5V; Power Rohs Compliant: Yes

***rchild Semiconductor: These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switching DC/DC converters.

***emi: Power MOSFET, P-Channel, QFET®, -200 V, -0.67 A, 2.7 Ω, SOT-223

***et: Trans MOSFET P-CH 200V 0.67A 4-Pin(3+Tab) SOT-223 T/R

***Yang: Trans MOSFET P-CH 200V 0.67A 4-Pin(3+Tab) SOT-223 T/R - Product that comes on tape, but is not reele

***nell: MOSFET, P-CH, -400V, -0.67A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -670mA; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 2.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage V

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 0.85 A, 1.4 Ω, SOT-223

***(Formerly Allied Electronics): Transistor, N-channel, QFET MOSFET, 200V, 0.85A, 140 Ohm at VGS 10V, SOT-223 | ON Semiconductor FQT4N20LTF

***ure Electronics: N-Channel 200 V 1.35 Ohm 5.2 nC Logic Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***ment14 APAC: MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Source Voltage Vds:200V; On Resistance

***nell: MOSFET, N CH, 200V, 0.85A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 850mA; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.2W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package

***ure Electronics: STN4NF20L: 200 V 1 A N-Ch. Low Gate Charge STripFET II Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 200V 1A 4-Pin(3+Tab) SOT-223 T/R

***ment14 APAC: MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:200V; On Resistance

***nell: MOSFET, N-CH, 200V, 1A, SOT-223-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: StripFET II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FQT4N25TF DISTI # V72:2272_06301314	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R	190	100:$0.3280 25:$0.4244 10:$0.5187 1:$0.5764
FQT4N25TF DISTI # V36:1790_06301314	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R	0	4000000:$0.1747 2000000:$0.1750 400000:$0.1976 40000:$0.2371 4000:$0.2436
FQT4N25TF DISTI # FQT4N25TFCT-ND	ON Semiconductor	MOSFET N-CH 250V 0.83A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1800In Stock	1000:$0.2590 500:$0.3238 100:$0.4096 10:$0.5340 1:$0.6100
FQT4N25TF DISTI # FQT4N25TFDKR-ND	ON Semiconductor	MOSFET N-CH 250V 0.83A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1800In Stock	1000:$0.2590 500:$0.3238 100:$0.4096 10:$0.5340 1:$0.6100
FQT4N25TF DISTI # FQT4N25TFTR-ND	ON Semiconductor	MOSFET N-CH 250V 0.83A SOT-223 RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	28000:$0.2012 12000:$0.2122 8000:$0.2279 4000:$0.2436
FQT4N25TF DISTI # 33368491	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R	12000	4000:$0.1578
FQT4N25TF DISTI # 30616253	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R	2690	34:$0.7550
FQT4N25TF DISTI # 25743590	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R	190	37:$0.5764
FQT4N25TF DISTI # FQT4N25TF	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT4N25TF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	40000:$0.1607 24000:$0.1648 16000:$0.1669 8000:$0.1691 4000:$0.1702
FQT4N25TF DISTI # FQT4N25TF	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: FQT4N25TF) RoHS: Compliant Min Qty: 1316 Container: Bulk	Americas - 0	13160:$0.2339 6580:$0.2399 3948:$0.2429 2632:$0.2459 1316:$0.2479
FQT4N25TF DISTI # FQT4N25TF	ON Semiconductor	Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT4N25TF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	40000:€0.1609 24000:€0.1739 16000:€0.1879 8000:€0.2049 4000:€0.2509
FQT4N25TF DISTI # 82C4374	ON Semiconductor	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,830MA I(D),SOT-223 ROHS COMPLIANT: YES	0	30000:$0.1940 18000:$0.2020 12000:$0.2170 6000:$0.2320 3000:$0.2520 1:$0.2580
FQT4N25TF DISTI # 31Y1564	ON Semiconductor	MOSFET, N-CH, 250V, 0.83A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:830mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):1.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes	2121	1000:$0.2580 500:$0.2830 250:$0.3080 100:$0.3330 50:$0.4040 25:$0.4750 10:$0.5460 1:$0.6670
FQT4N25TF. DISTI # 27AC5849	Fairchild Semiconductor Corporation	QF 250V 1.75OHM SOT223 ROHS COMPLIANT: YES	0	40000:$0.1660 24000:$0.1700 16000:$0.1720 8000:$0.1750 1:$0.1760
FQT4N25TF DISTI # 512-FQT4N25TF	ON Semiconductor	MOSFET 250V Single RoHS: Compliant	16180	1:$0.6600 10:$0.5410 100:$0.3300 1000:$0.2550 4000:$0.2180 8000:$0.2030 24000:$0.1920
FQT4N25TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 0.83A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	70118	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
FQT4N25TF	Fairchild Semiconductor Corporation		32
FQT4N25TF DISTI # 8075939P	ON Semiconductor	MOSFETFAIRCHILDFQT4N25TF, RL	2040	2000:£0.1710 1000:£0.1860 200:£0.2170 100:£0.2470
FQT4N25TF DISTI # 2453914	ON Semiconductor	MOSFET, N-CH, 250V, 0.83A, SOT-223-3	2986	500:£0.1970 250:£0.2260 100:£0.2550 10:£0.4620 1:£0.5820
FQT4N25TF DISTI # 2453914RL	ON Semiconductor	MOSFET, N-CH, 250V, 0.83A, SOT-223-3 RoHS: Compliant	0	24000:$0.2950 8000:$0.3130 4000:$0.3360 1000:$0.3920 100:$0.5070 10:$0.8320 1:$1.0200
FQT4N25TF DISTI # 2453914	ON Semiconductor	MOSFET, N-CH, 250V, 0.83A, SOT-223-3 RoHS: Compliant	2116	24000:$0.2950 8000:$0.3130 4000:$0.3360 1000:$0.3920 100:$0.5070 10:$0.8320 1:$1.0200

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Disponibilità

Azione:: 16
Su ordine:: 1999
Inserisci la quantità:

Il prezzo attuale di FQT4N25TF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,66 USD~~; ~~0,66 USD~~

10: ~~0,54 USD~~; ~~5,41 USD~~

100: ~~0,33 USD~~; ~~33,00 USD~~

1000: ~~0,26 USD~~; ~~255,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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FQT4N25TF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes