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IPI60R099CPA

IPI60R099CPA
Mfr. #:
IPI60R099CPA
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CPA
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPI60R099CPA Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IPI60R099CPA maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-262-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
31 A
Rds On - Resistenza Drain-Source:
199 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
255 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
CoolMOS
Confezione:
Tubo
Altezza:
9.45 mm
Lunghezza:
10.2 mm
Prodotto:
Potenza MOSFET
Serie:
CoolMOS CPA
Tipo di transistor:
1 N-Channel
Larghezza:
4.5 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
5 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
5 ns
Quantità confezione di fabbrica:
500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
60 ns
Tempo di ritardo di accensione tipico:
10 ns
Parte # Alias:
IPI60R099CPAAKSA1 IPI6R99CPAXK SP000315454
Unità di peso:
0.084199 oz
Tags
IPI60R099CPA, IPI60R0, IPI60R, IPI60, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube / CoolMOS Power Transistor
***ineon SCT
Infineon's CoolMOS™ CPA Superjunction MOSFET is specifically designed for DC-DC converters for automotive application, PG-TO262-3-3, RoHS
***hard Electronics
Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Voltage, Vds Typ:600V; Current, Id Cont:31A; Resistance, Rds On:0.099ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262; Temperature, Operating RoHS Compliant: Yes
***ineon
Summary of Features: Worldwide best R ds,on in TO220; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Automotive AEC Q101 qualified; Green package (RoHS compliant); CoolMOS CPA is specially designed for:; DC/DC converters for Automotive Application
***et Europe
Trans MOSFET N-CH 650V 38A 3-Pin TO-262 Tube
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO262-3-3, RoHS
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***icroelectronics
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in I2PAKFP package
***et
Trans MOSFET N-CH 600V 34A 3-Pin I2PAK FP Tube
***o-Tech
MOSFET N-Ch 600V 34A MDmesh II PlusTO247
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-262 Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:25A; On State Resistance:0.125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-262; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in I2PAK package
***r Electronics
Power Field-Effect Transistor, 32A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 650V 32A 3-Pin I2PAK Tube
***el Electronic
LDO Voltage Regulators 200mA,Low IQ,Low- Noise,LDO Reg
***icroelectronics
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK
***ure Electronics
STI42N65M5 Series 650 V 79 mOhm N-Channel MDmesh™ V Power MOSFET - I2PAK-3
***r Electronics
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N CH, 650V, 33A, I2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 125 mΩ, I2PAK
***r Electronics
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N CH, 600V, 25A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.107ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***el Electronic
Aluminum Electrolytic Capacitors 470μF Radial, Can ±20% Tape & Box (TB) FC 0.532 13.50mm Through Hole Automotive 755mA Cap Aluminum Lytic 470uF 16V 20% (10 X 12.5mm) Radial 5mm 755mA 3000h 105C Ammo Pack
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descrizione Azione Prezzo
IPI60R099CPAAKSA1
DISTI # V36:1790_06377195		Infineon Technologies AGTrans MOSFET N-CH 600V 31A Automotive 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		0
    IPI60R099CPXKSA1
    DISTI # IPI60R099CPXKSA1-ND    		Infineon Technologies AGMOSFET N-CH 60V 31A TO-262
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Limited Supply - Call
    • 500:$5.0354
    IPI60R099CPAAKSA1
    DISTI # IPI60R099CPAAKSA1-ND    		Infineon Technologies AGMOSFET N-CH 60V 31A TO-262
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Limited Supply - Call
    • 500:$5.0488
    IPI60R099CPA
    DISTI # SP000315454    		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 3-Pin TO-262 Tube (Alt: SP000315454)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€3.3900
    • 100:€3.4900
    • 500:€3.4900
    • 50:€3.5900
    • 10:€3.7900
    • 25:€3.7900
    • 1:€3.8900
    IPI60R099CPAXK
    DISTI # IPI60R099CPAAKSA1    		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R099CPAAKSA1)
    RoHS: Compliant
    Min Qty: 500
    Container: Tube    		Americas - 0
    • 5000:$3.6900
    • 3000:$3.7900
    • 2000:$3.8900
    • 1000:$4.0900
    • 500:$4.1900
    IPI60R099CPA
    DISTI # 726-IPI60R099CPA    		Infineon Technologies AGMOSFET N-Ch 600V 31A I2PAK-3 CoolMOS CPA
    RoHS: Compliant    		490
    • 1:$7.0400
    • 10:$6.3600
    • 25:$6.0700
    • 100:$5.2700
    • 250:$5.0300
    • 500:$4.5900
    • 1000:$3.9900
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    Disponibilità
    Azione:
    488
    Su ordine:
    2471
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    Prezzo di riferimento (USD)
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    est. Prezzo
    1
    7,04 USD
    7,04 USD
    10
    6,36 USD
    63,60 USD
    25
    6,07 USD
    151,75 USD
    100
    5,27 USD
    527,00 USD
    250
    5,03 USD
    1 257,50 USD
    500
    4,59 USD
    2 295,00 USD
    1000
    3,99 USD
    3 990,00 USD
    2500
    3,85 USD
    9 625,00 USD
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