OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

FPF2G120BF07AS

FPF2G120BF07AS
Mfr. #:
FPF2G120BF07AS
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Modules High Power Module
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FPF2G120BF07AS Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FPF2G120BF07AS maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
Triplicare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.55 V
Corrente continua del collettore a 25 C:
40 A
Corrente di dispersione gate-emettitore:
2 uA
Pd - Dissipazione di potenza:
98 W, 140 W, 156 W
Pacchetto/custodia:
F2
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Vassoio
Serie:
FPF2G120BF07AS
Marca:
ON Semiconductor / Fairchild
Stile di montaggio:
SMD/SMT
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
70
sottocategoria:
IGBT
Unità di peso:
1.587328 oz
Tags
FPF2G, FPF2, FPF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module (PIM), F2, SiC Diode + IGBT, 650 V, 40 A
***ical
Trans IGBT Module N=-CH 650V 40A 156000mW 17-Pin Case F2 Tray
***ark
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE
***rchild Semiconductor
The FPF2G120BF07AS is the 3ch boost topology which is providing an optimized solution for the multi-string solar application.And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. Furthermore, the screw clamp provides a fast and reliable mounting method.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
FPF2G120BF07AS 3-Channel Boost Module
ON Semiconductor FPF2G120BF07AS 3-Channel Boost Module provides an optimized solution for the multi-string solar application. The integrated high speed field stop IGBTs and SiC diodes provide lower conduction and switching losses. And, the screw clamp provides a fast and reliable mounting method.Learn More
Parte # Mfg. Descrizione Azione Prezzo
FPF2G120BF07AS
DISTI # V99:2348_14141233		ON SemiconductorTrans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray70
  • 100:$93.6600
  • 25:$98.4599
  • 10:$101.4599
  • 5:$104.1600
  • 1:$105.2000
FPF2G120BF07ASP
DISTI # V99:2348_14141234		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 25:$102.0699
  • 10:$105.1900
  • 5:$108.7000
  • 1:$109.0800
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		70In Stock
  • 10:$103.6350
  • 1:$109.2800
FPF2G120BF07AS
DISTI # FPF2G120BF07AS-ND		ON SemiconductorIC LOAD SWITCH
RoHS: Compliant
Min Qty: 1
Container: Tray		65In Stock
  • 10:$99.9600
  • 1:$105.4000
FPF2G120BF07AS
DISTI # 25887478		ON SemiconductorTrans IGBT Module N-CH 650V 40A 156000mW 17-Pin Case F2 Tray70
  • 1:$105.2000
FPF2G120BF07ASP
DISTI # 31085825		ON SemiconductorHPM(HIGH POWER MODULE)70
  • 1:$109.0800
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07AS)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€78.7900
  • 500:€79.2900
  • 100:€79.8900
  • 50:€80.3900
  • 25:€80.9900
  • 10:€81.4900
  • 1:€82.0900
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Bulk (Alt: FPF2G120BF07AS)
Min Qty: 4
Container: Bulk		Americas - 0
  • 40:$93.1900
  • 20:$95.5900
  • 12:$96.7900
  • 8:$98.0900
  • 4:$98.6900
FPF2G120BF07AS
DISTI # FPF2G120BF07AS		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07AS)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$81.8900
  • 420:$83.8900
  • 280:$85.9900
  • 140:$88.2900
  • 70:$89.3900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 - Trays (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 70
Container: Tray		Americas - 0
  • 700:$84.8900
  • 420:$86.9900
  • 280:$89.1900
  • 140:$91.4900
  • 70:$92.6900
FPF2G120BF07ASP
DISTI # FPF2G120BF07ASP		ON SemiconductorTrans IGBT Module N-CH 650V 40A 17-Pin Case F2 (Alt: FPF2G120BF07ASP)
RoHS: Compliant
Min Qty: 1
Container: Case		Europe - 0
  • 1000:€81.6900
  • 500:€82.1900
  • 100:€82.7900
  • 50:€83.3900
  • 25:€83.8900
  • 10:€84.4900
  • 1:€85.0900
FPF2G120BF07AS
DISTI # 512-FPF2G120BF07AS		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		11
  • 1:$108.8000
  • 5:$106.8100
  • 10:$102.0000
FPF2G120BF07ASP
DISTI # 512-FPF2G120BF07ASP		ON SemiconductorIGBT Modules High Power Module
RoHS: Compliant		70
  • 1:$112.8000
  • 5:$110.7300
  • 10:$105.7500
  • 25:$102.2200
FPF2G120BF07ASFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor
RoHS: Compliant		140
  • 1000:$99.4200
  • 500:$104.6500
  • 100:$108.9600
  • 25:$113.6200
  • 1:$122.3600
Immagine Parte # Descrizione
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS

 IGBT Modules High Power Module
FPF2G120BF07AS

Mfr.#: FPF2G120BF07AS

OMO.#: OMO-FPF2G120BF07AS-ON-SEMICONDUCTOR

 IC LOAD SWITCH
FPF2G120BF07ASP

Mfr.#: FPF2G120BF07ASP

OMO.#: OMO-FPF2G120BF07ASP-ON-SEMICONDUCTOR

 IC LOAD SWITCH
Disponibilità
Azione:
11
Su ordine:
1994
Inserisci la quantità:
Il prezzo attuale di FPF2G120BF07AS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
108,80 USD
108,80 USD
5
106,81 USD
534,05 USD
10
102,00 USD
1 020,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
Iniziare con
Prodotti più recenti
  • Gate Drivers
    Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • Compare FPF2G120BF07AS
    Compare FPF2G120BF07AS
    FPF2G120BF07AS vs FPF2G120BF07ASP vs FPF2G75FH07A
  • NCP137 700 mA LDO Regulators
    NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • LC717A00AR Touch Sensor
    LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
More Newest Products
Top