IXYN100N120C3

IXYN100N120C3
Mfr. #:
IXYN100N120C3
Produttore:
Littelfuse
Descrizione:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXYN100N120C3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN100N120C3 DatasheetIXYN100N120C3 Datasheet (P4-P6)IXYN100N120C3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
IXYN100N120C3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
SOT-227B-4
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.9 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
152 A
Pd - Dissipazione di potenza:
830 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
IXYN100N120
Confezione:
Tubo
Corrente continua del collettore Ic Max:
152 A
Marca:
IXYS
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Nome depositato:
XPT
Unità di peso:
1.058219 oz
Tags
IXYN100N1, IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 152 A Chassis Mount High-Speed IGBT - SOT-227B
***ical
Trans IGBT Module N-CH 1200V 152A 830000mW
***i-Key
IGBT MOD 1200V 152A 830W SOT227B
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 160 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 3.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 830 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-227B / Pins = 4 / Mounting Type = SMD / Packaging = Tube / Reflow Temperature Max. °C = 260
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXYN100N120C3H1
DISTI # V99:2348_15876629
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
RoHS: Compliant
10
  • 200:$28.3400
  • 100:$31.2600
  • 50:$32.3900
  • 25:$34.0400
  • 10:$37.1500
  • 5:$38.5900
  • 1:$40.5100
IXYN100N120C3
DISTI # V99:2348_15876625
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 152A 4-Pin SOT-227B
RoHS: Compliant
3
  • 200:$23.3900
  • 100:$25.0400
  • 50:$26.3600
  • 25:$27.1600
  • 10:$29.4500
  • 5:$30.3700
  • 1:$31.9800
IXYN100N120C3H1
DISTI # V36:1790_15876629
IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
RoHS: Compliant
0
    IXYN100N120C3H1
    DISTI # IXYN100N120C3H1-ND
    IXYS CorporationIGBT XPT 1200V 134A SOT-227B
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    153In Stock
    • 100:$32.9648
    • 30:$35.1623
    • 10:$38.0190
    • 1:$40.6600
    IXYN100N120C3
    DISTI # IXYN100N120C3-ND
    IXYS CorporationIGBT XPT 1200V 152A SOT-227B
    RoHS: Compliant
    Min Qty: 10
    Container: Tube
    Temporarily Out of Stock
    • 10:$33.5470
    IXYN100N120C3H1
    DISTI # 33629159
    IXYS CorporationTrans IGBT Chip N-CH 1.2KV 134A 4-Pin SOT-227B
    RoHS: Compliant
    10
    • 1:$40.5100
    IXYN100N120C3
    DISTI # 29518522
    IXYS CorporationTrans IGBT Chip N-CH 1.2KV 152A 4-Pin SOT-227B
    RoHS: Compliant
    3
    • 200:$25.1442
    • 100:$26.9180
    • 50:$28.3370
    • 25:$29.1970
    • 10:$31.6588
    • 5:$32.6478
    • 1:$34.3785
    IXYN100N120C3H1
    DISTI # 02AC9854
    IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B,Transistor Polarity:N Channel,DC Collector Current:134A,Collector Emitter Saturation Voltage Vce(on):3.5V,Power Dissipation Pd:690W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes5
    • 250:$29.1800
    • 100:$33.2900
    • 50:$33.4000
    • 25:$35.5100
    • 10:$38.3900
    • 5:$39.1100
    • 1:$41.0700
    IXYN100N120C3
    DISTI # 747-IXYN100N120C3
    IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant
    82
    • 1:$34.5400
    • 5:$32.8100
    • 10:$31.9500
    • 25:$29.3600
    • 50:$28.6500
    • 100:$27.2900
    • 200:$25.0400
    IXYN100N120C3H1
    DISTI # 747-IXYN100N120C3H1
    IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
    RoHS: Compliant
    1075
    • 1:$40.6600
    • 5:$38.7200
    • 10:$38.0100
    • 25:$35.1600
    • 50:$33.0700
    • 100:$32.9600
    • 200:$28.8900
    IXYN100N120C3
    DISTI # 8047600
    IXYS CorporationIGBT N-CH 1200V 86A XPT GENX3 SOT227B, EA23
    • 25:£22.8200
    • 10:£23.6400
    • 5:£24.7400
    • 1:£27.4900
    IXYN100N120C3H1
    DISTI # 8047619
    IXYS CorporationIGBT 1200V 134A XPT GENX3 DIODE SOT227B, EA91
    • 30:£22.8500
    • 10:£23.3200
    • 5:£24.1700
    • 2:£25.2900
    • 1:£28.1000
    IXYN100N120C3H1
    DISTI # 2674801
    IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B
    RoHS: Compliant
    5
    • 100:$49.9400
    • 30:$53.2700
    • 10:$57.5900
    • 1:$61.5900
    IXYN100N120C3H1
    DISTI # 2674801
    IXYS CorporationIGBT, N-CH, 1.2KV, 134A, SOT-227B
    RoHS: Compliant
    5
    • 100:£23.3800
    • 50:£26.7600
    • 10:£27.9300
    • 5:£31.3300
    • 1:£32.3000
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    Disponibilità
    Azione:
    Available
    Su ordine:
    5500
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    Prezzo di riferimento (USD)
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    est. Prezzo
    1
    34,54 USD
    34,54 USD
    5
    32,81 USD
    164,05 USD
    10
    31,95 USD
    319,50 USD
    25
    29,36 USD
    734,00 USD
    50
    28,65 USD
    1 432,50 USD
    100
    27,29 USD
    2 729,00 USD
    200
    25,04 USD
    5 008,00 USD
    500
    23,83 USD
    11 915,00 USD
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