NVMFD5877NLT1G

NVMFD5877NLT1G
Mfr. #:
NVMFD5877NLT1G
Produttore:
ON Semiconductor
Descrizione:
MOSFET 16-128MHZ3.3VGPEMI
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NVMFD5877NLT1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NVMFD5877NLT1G DatasheetNVMFD5877NLT1G Datasheet (P4-P6)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
DFN-5x6-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
60 V
Id - Corrente di scarico continua:
17 A
Rds On - Resistenza Drain-Source:
60 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
23 W
Configurazione:
Dual
Qualificazione:
AEC-Q101
Confezione:
Bobina
Serie:
NVMFD5877NL
Tipo di transistor:
2 N-Channel
Marca:
ON Semiconductor
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
1500
sottocategoria:
MOSFET
Unità di peso:
0.001319 oz
Tags
NVMFD5877NLT, NVMFD5877, NVMFD587, NVMFD58, NVMFD, NVMF, NVM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descrizione Azione Prezzo
NVMFD5877NLT1G
DISTI # V72:2272_07304067
ON SemiconductorTrans MOSFET N-CH 60V 17A Automotive 8-Pin DFN EP T/R
RoHS: Compliant
349
  • 250:$0.4709
  • 100:$0.5834
  • 25:$0.7330
  • 10:$0.7671
  • 1:$0.8994
NVMFD5877NLT1G
DISTI # NVMFD5877NLT1GOSTR-ND
ON SemiconductorMOSFET 2N-CH 60V 6A 8SOIC
RoHS: Compliant
Min Qty: 1500
Container: Tape & Reel (TR)
On Order
  • 1500:$0.4699
NVMFD5877NLT1G
DISTI # NVMFD5877NLT1GOSCT-ND
ON SemiconductorMOSFET 2N-CH 60V 6A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$0.6131
  • 100:$0.7906
  • 10:$1.0000
  • 1:$1.1300
NVMFD5877NLT1G
DISTI # NVMFD5877NLT1GOSDKR-ND
ON SemiconductorMOSFET 2N-CH 60V 6A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$0.6131
  • 100:$0.7906
  • 10:$1.0000
  • 1:$1.1300
NVMFD5877NLT1G
DISTI # 29474608
ON SemiconductorTrans MOSFET N-CH 60V 17A Automotive 8-Pin DFN EP T/R
RoHS: Compliant
349
  • 250:$0.4709
  • 100:$0.5834
  • 25:$0.7330
  • 18:$0.7671
NVMFD5877NLT1G
DISTI # NVMFD5877NLT1G
ON SemiconductorTrans MOSFET N-CH 60V 17A 8-Pin DFN T/R - Tape and Reel (Alt: NVMFD5877NLT1G)
RoHS: Compliant
Min Qty: 1500
Container: Reel
Americas - 1500
  • 1500:$0.4269
  • 3000:$0.4259
  • 6000:$0.4249
  • 9000:$0.4229
  • 15000:$0.4219
NVMFD5877NLT1G
DISTI # NVMFD5877NLT1G
ON SemiconductorTrans MOSFET N-CH 60V 17A 8-Pin DFN T/R (Alt: NVMFD5877NLT1G)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel
Europe - 0
  • 1500:€0.5609
  • 3000:€0.4589
  • 6000:€0.4209
  • 9000:€0.3879
  • 15000:€0.3609
NVMFD5877NLT1G
DISTI # NVMFD5877NLT1G
ON SemiconductorTrans MOSFET N-CH 60V 17A 8-Pin DFN T/R (Alt: NVMFD5877NLT1G)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel
Asia - 0
  • 1500:$0.5696
  • 3000:$0.5477
  • 4500:$0.5274
  • 7500:$0.5086
  • 15000:$0.4910
  • 37500:$0.4747
  • 75000:$0.4669
NVMFD5877NLT1G
DISTI # 52T8348
ON SemiconductorNFET SO8FL 60V 17A 39MOHM / REEL0
    NVMFD5877NLT1G
    DISTI # 81Y7074
    ON SemiconductorMOSFET, DUAL N CH, 60V, 17A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes0
    • 1000:$0.4280
    • 500:$0.5420
    • 250:$0.5780
    • 100:$0.6130
    • 50:$0.6750
    • 25:$0.7360
    • 10:$0.7980
    • 1:$0.9400
    NVMFD5877NLT1G
    DISTI # 70467582
    ON SemiconductorNVMFD5877NLT1G Dual N-channel MOSFET Transistor,17 A,60 V,8-Pin DFN
    RoHS: Compliant
    0
    • 40:$0.4130
    • 80:$0.4050
    • 200:$0.3930
    NVMFD5877NLT1G
    DISTI # 863-NVMFD5877NLT1G
    ON SemiconductorMOSFET 16-128MHZ3.3VGPEMI
    RoHS: Compliant
    64
    • 1:$0.9300
    • 10:$0.7980
    • 100:$0.6130
    • 500:$0.5420
    • 1000:$0.4280
    • 1500:$0.3790
    • 9000:$0.3650
    NVMFD5877NLT1GON Semiconductor 1011
      NVMFD5877NLT1G
      DISTI # 2533211
      ON SemiconductorMOSFET, DUAL N CH, 60V, 17A
      RoHS: Compliant
      0
      • 1500:$0.6330
      • 1000:$0.6450
      • 500:$0.8170
      • 100:$0.9240
      • 10:$1.2000
      • 1:$1.4200
      NVMFD5877NLT1G
      DISTI # 2533211
      ON SemiconductorMOSFET, DUAL N CH, 60V, 17A
      RoHS: Compliant
      0
      • 500:£0.4170
      • 250:£0.4450
      • 100:£0.4720
      • 25:£0.6150
      • 5:£0.6890
      NVMFD5877NLT1G
      DISTI # XSFP00000102145
      ON SEMICONDUCTORSmall Signal Field-Effect Transistor,3.3AI(D),8V,2-Element, N-ChannelandP-Channel,Silicon,Metal-oxide Semiconductor FET
      RoHS: Compliant
      327000 in Stock0 on Order
      • 327000:$0.4812
      • 1500:$0.5923
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      OMO.#: OMO-MUSBRM1C130

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      Mfr.#: LP5912-3.3DRVR

      OMO.#: OMO-LP5912-3-3DRVR-TEXAS-INSTRUMENTS

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      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
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      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,93 USD
      0,93 USD
      10
      0,80 USD
      7,98 USD
      100
      0,61 USD
      61,30 USD
      500
      0,54 USD
      271,00 USD
      1000
      0,43 USD
      428,00 USD
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