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ZDS020N60TB

ZDS020N60TB
Mfr. #:
ZDS020N60TB
Produttore:
Rohm Semiconductor
Descrizione:
MOSFET 10V Drive Nch MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
ZDS020N60TB Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOP-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
630 mA
Rds On - Resistenza Drain-Source:
4.4 Ohms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
20 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
ZDS020N60
Tipo di transistor:
1 N-Channel
Marca:
Semiconduttore ROHM
Transconduttanza diretta - Min:
50 mS
Tempo di caduta:
65 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
20 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
65 ns
Tempo di ritardo di accensione tipico:
25 ns
Parte # Alias:
ZDS020N60
Tags
ZDS020N, ZDS02, ZDS0, ZDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 0.63A 8-Pin SOP T/R
*** Source Electronics
MOSFET N-CH 600V 8SOIC
***i-Key
MOSFET N-CH 600V 630MA 8SOP
***ure Electronics
Dual N-Channel 450 V 3.8 Ohm SMT SuperMESH3 Power MosFet - SOIC-8
***ical
Trans MOSFET N-CH 450V 0.5A 8-Pin SO N T/R
***r Electronics
Power Field-Effect Transistor, 0.5A I(D), 450V, 3.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N CH, 450V, 0.5A, 8SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 500mA; Drain Source Voltage Vds: 450V; On Resistance Rds(on): 3.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***(Formerly Allied Electronics)
FW276-TL-2H Dual N-channel MOSFET Transistor; 0.7 A; 450 V; 8-Pin SOIC
***emi
N-Channel Power MOSFET, 450V, 0.7A, 12.1Ω, Dual SOIC8
***ark
Dual MOSFET, Dual N Channel, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
***et
Trans MOSFET N-CH 450V 0.7A 8-Pin SOIC T/R
***nell
NCH DUAL 400V 0.7A SOIC8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 700mA; Drain Source Voltage Vds: 450V; On Resistance Rds(on): 9.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***icroelectronics
DUAL N-CHANNEL 450V - 4.1 OHM - 0.4A SO-8 SuperMESH POWER MOSFET
***et
Transistor MOSFET Array Dual N-CH 450V 0.4A 8-Pin SOIC T/R
***ark
Mosfet, Dual N-Ch, 450V, 0.4A, Soic; Channel Type:n Channel; Drain Source Voltage Vds N Channel:450V; Drain Source Voltage Vds P Channel:450V; Continuous Drain Current Id N Channel:400Ma; Continuous Drain Current Id P Channel:400Ma Rohs Compliant: Yes
***et
Transistor MOSFET Array Dual N-CH 450V 0.85A 8-Pin SOIC T/R
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 450V VDS, 30±V VGS,
***roFlash
Trans MOSFET N-CH 450V 0.5A Automotive 8-Pin SO T/R
***ark
Mosfet, Dual, N-Ch, 450V, 0.5A Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 1.9 A, 150 V, 280 Mohm, 10 V, 5.5 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC Tube
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
*** Stop Electro
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5
Parte # Mfg. Descrizione Azione Prezzo
ZDS020N60TB
DISTI # ZDS020N60TB-ND		ROHM SemiconductorMOSFET N-CH 600V 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5040
ZDS020N60TB
DISTI # ZDS020N60TB		ROHM SemiconductorTrans MOSFET N-CH 600V 0.63A 8-Pin SOP T/R - Tape and Reel (Alt: ZDS020N60TB)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3079
  • 15000:$0.3159
  • 10000:$0.3349
  • 5000:$0.3559
  • 2500:$0.3789
ZDS020N60TB
DISTI # 755-ZDS020N60TB		ROHM SemiconductorMOSFET 10V Drive Nch MOSFET
RoHS: Compliant		0
    Immagine Parte # Descrizione
    ZDS020N60TB

    Mfr.#: ZDS020N60TB

    OMO.#: OMO-ZDS020N60TB

    		 MOSFET 10V Drive Nch MOSFET
    ZDS020

    Mfr.#: ZDS020

    OMO.#: OMO-ZDS020-1190

    		 Nuovo e originale
    ZDS020N06

    Mfr.#: ZDS020N06

    OMO.#: OMO-ZDS020N06-1190

    		 Nuovo e originale
    ZDS020N60

    Mfr.#: ZDS020N60

    OMO.#: OMO-ZDS020N60-1190

    		 Nuovo e originale
    ZDS020N60TB

    Mfr.#: ZDS020N60TB

    OMO.#: OMO-ZDS020N60TB-ROHM-SEMI

    		 MOSFET N-CH 600V 8SOIC
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di ZDS020N60TB è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,18 USD
    1,18 USD
    10
    1,00 USD
    10,00 USD
    100
    0,77 USD
    77,40 USD
    500
    0,68 USD
    342,00 USD
    1000
    0,54 USD
    539,00 USD
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