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IRGB14C40LPBF

IRGB14C40LPBF
Mfr. #:
IRGB14C40LPBF
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors 430V LO-VCEON DISCRETE IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRGB14C40LPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGB14C40LPBF DatasheetIRGB14C40LPBF Datasheet (P4-P6)IRGB14C40LPBF Datasheet (P7-P9)IRGB14C40LPBF Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-220-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
430 V
Tensione di saturazione collettore-emettitore:
1.4 V
Tensione massima dell'emettitore di gate:
10 V
Corrente continua del collettore a 25 C:
20 A
Pd - Dissipazione di potenza:
125 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
20 A
Altezza:
8.77 mm
Lunghezza:
10.54 mm
Larghezza:
4.69 mm
Marca:
Tecnologie Infineon
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Parte # Alias:
SP001547952
Unità di peso:
0.211644 oz
Tags
IRGB14, IRGB1, IRGB, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IRGB14C40LPBF Series 430 V 14 A N-Channel Ignition IGBT - TO-220AB
***p One Stop Global
Trans IGBT Chip N-CH 370V 20A 125000mW 3-Pin(3+Tab) TO-220AB Tube
***ical
Trans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB
***ernational Rectifier
430V Low-Vceon Discrete IGBT in a TO-220AB package
***Components
430V LOW-VCEON DISCRETE IGBT IN A TO-220
***i-Key
IGBT IGNITION 430V 20A TO220AB
***ronik
IGBT TO-220 RoHSconf
*** Source Electronics
IGBT 430V 20A 125W TO220AB
***trelec
IGBT Housing type: TO-220 Collector-emitter breakdown voltage: 430 V Collector-emitter saturation voltage: 1.4 V Power dissipation: 125 W
***ineon
Target Applications: Lighting HID
***ukat
430V(Cl.) 20A 125W TO220AB
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):1.75V; Power Dissipation, Pd:125W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, 430V, 20A, TO-220; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:430V; Current Ic Continuous a Max:20A; Voltage, Vce Sat Max:1.75V; Power Dissipation:125W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:430V; Device Marking:IRGB14C40LPBF; No. of Pins:3; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-40°C; Time, Fall Max:2.8ns; Time, Rise:2400ns; Transistors, No. of:1; Voltage, Clamping:430V
***ment14 APAC
IGBT, 430V, 20A, TO-220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:430V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Clamping Voltage:430V; Current Ic Continuous a Max:20A; Current Temperature:25°C; Device Marking:IRGB14C40LPbF; Fall Time Max:2.8ns; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Rise Time:2400ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:430V
Parte # Mfg. Descrizione Azione Prezzo
IRGB14C40LPBF
DISTI # V99:2348_13893093		Infineon Technologies AGTrans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB Tube1000
  • 5000:$1.1131
  • 2500:$1.1459
  • 1000:$1.2196
  • 500:$1.4233
  • 100:$1.5885
  • 10:$1.8899
  • 1:$2.1461
IRGB14C40LPBF
DISTI # IRGB14C40LPBF-ND		Infineon Technologies AGIGBT 430V 20A 125W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3897In Stock
  • 1000:$1.3267
  • 500:$1.6012
  • 100:$1.9489
  • 10:$2.4250
  • 1:$2.7000
IRGB14C40LPBF
DISTI # 31053432		Infineon Technologies AGTrans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB Tube1495
  • 1000:$1.0687
  • 500:$1.1424
  • 100:$1.2384
  • 10:$1.5264
IRGB14C40LPBF
DISTI # 30991752		Infineon Technologies AGTrans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB Tube1000
  • 1000:$1.2187
  • 500:$1.4227
  • 100:$1.5880
  • 10:$1.8897
  • 6:$2.1457
IRGB14C40LPBF
DISTI # IRGB14C40LPBF		Infineon Technologies AGTrans IGBT Chip N-CH 370V 20A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRGB14C40LPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$1.6900
  • 10:$1.5900
  • 25:$1.5900
  • 50:$1.5900
  • 100:$1.2900
  • 500:$1.1900
  • 1000:$1.0900
IRGB14C40LPBF
DISTI # 63J7438		Infineon Technologies AGSINGLE IGBT, 430V, 20A,DC Collector Current:20A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:125W,Collector Emitter Voltage V(br)ceo:430V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes325
  • 1:$2.8300
  • 10:$2.4000
  • 100:$1.9300
  • 500:$1.6800
  • 1000:$1.4000
  • 2500:$1.3000
  • 5000:$1.2500
IRGB14C40LPBF
DISTI # 70017509		Infineon Technologies AG430V Low-VCE(ON) Discrete IGBT IN A TO-220AB Package
RoHS: Compliant		1111
  • 1:$4.1200
  • 10:$3.6300
  • 100:$3.1700
  • 500:$2.7500
  • 1000:$2.4200
IRGB14C40LPBFInfineon Technologies AGIRGB14C40LPBF Series 430 V 14 A N-Channel Ignition IGBT - TO-220AB
RoHS: Compliant		3872Tube
  • 10:$1.4500
  • 300:$1.2800
IRGB14C40LPBF
DISTI # 942-IRGB14C40LPBF		Infineon Technologies AGIGBT Transistors 430V LO-VCEON DISCRETE IGBT
RoHS: Compliant		1841
  • 1:$2.5700
  • 10:$2.1800
  • 100:$1.7500
  • 500:$1.5300
  • 1000:$1.2700
  • 2000:$1.1800
  • 5000:$1.1400
IRGB14C40LPBF
DISTI # 8303269		Infineon Technologies AGIGBT 370V 20A W/CLAMPS IGNITION TO-220AB, PK60
  • 5:£1.9240
  • 25:£1.7040
IRGB14C40LPBF
DISTI # 8303269P		Infineon Technologies AGIGBT 370V 20A W/CLAMPS IGNITION TO-220AB, TU1475
  • 25:£1.7040
IRGB14C40LPBF
DISTI # 8640971		Infineon Technologies AGIGBT 370V 20A W/CLAMPS IGNITION TO-220AB, PK500
  • 5:£1.8380
  • 100:£1.4960
  • 250:£1.4020
  • 500:£1.3100
  • 1000:£1.1040
IRGB14C40LPBFInternational Rectifier 80
    IRGB14C40LPBF
    DISTI # 8650829    		Infineon Technologies AGIGBT, 430V, 20A, TO-220
    RoHS: Compliant    		926
    • 1:$4.0700
    • 10:$3.4600
    • 100:$2.7800
    • 500:$2.4300
    • 1000:$2.0900
    IRGB14C40LPBF
    DISTI # 8650829    		Infineon Technologies AGIGBT, 430V, 20A, TO-220
    RoHS: Compliant    		921
    • 1:£1.8600
    • 10:£1.5100
    • 100:£1.3400
    • 250:£1.2600
    • 500:£1.1700
    IRGB14C40LPBF
    DISTI # C1S322000631562    		Infineon Technologies AGTrans IGBT Chip N-CH 370V 20A 125000mW 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1000
    • 1000:$1.2187
    • 500:$1.4227
    • 100:$1.5880
    • 10:$1.8897
    • 1:$2.1457
    IRGB14C40LPBF
    DISTI # C1S322000499717    		Infineon Technologies AGTrans IGBT Chip N-CH 370V 20A 125000mW 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1495
    • 1000:$1.3500
    • 500:$1.4600
    • 100:$1.9100
    • 50:$2.0700
    • 10:$2.5200
    • 1:$3.8900
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    Disponibilità
    Azione:
    531
    Su ordine:
    2514
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    Prezzo di riferimento (USD)
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    1,53 USD
    765,00 USD
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    1,27 USD
    1 270,00 USD
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