BSZ086P03NS3G

Mfr. #:: BSZ086P03NS3G
Produttore:: INF
Descrizione:
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSZ086P03NS3G Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: INF

categoria di prodotto: FET - Single

Serie: OptiMOS

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: BSZ086P03NS3GATMA1 BSZ086P03NS3GXT SP000473024

Stile di montaggio: SMD/SMT

Nome depositato: OptiMOS

Pacchetto-Custodia: 8-PowerTDFN

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PG-TSDSON-8 (3.3x3.3)

Configurazione: Singola Quad Scarico Tripla Sorgente

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 69W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: 4785pF @ 15V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 13.5A (Ta), 40A (Tc)

Rds-On-Max-Id-Vgs: 8.6 mOhm @ 20A, 10V

Vgs-th-Max-Id: 1.9V @ 105μA

Gate-Carica-Qg-Vgs: 57.5nC @ 10V

Pd-Power-Dissipazione: 69 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 8 ns

Ora di alzarsi: 46 ns

Vgs-Gate-Source-Voltage: 25 V

Id-Continuo-Scarico-Corrente: 13.5 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistenza: 8.6 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 35 ns

Tempo di ritardo all'accensione tipico: 16 ns

Modalità canale: Aumento

Tags: BSZ086P03NS3G, BSZ086P03NS, BSZ086, BSZ08, BSZ0, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSZ086P03NS3GATMA1 DISTI # V72:2272_06384536	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R RoHS: Compliant	3129	3000:$0.2723 1000:$0.3086 500:$0.3716 250:$0.3726 100:$0.3736 25:$0.5199 10:$0.5224 1:$0.6007
BSZ086P03NS3GATMA1 DISTI # BSZ086P03NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	25317In Stock	1000:$0.3852 500:$0.4815 100:$0.6501 10:$0.8430 1:$0.9600
BSZ086P03NS3GATMA1 DISTI # BSZ086P03NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	25317In Stock	1000:$0.3852 500:$0.4815 100:$0.6501 10:$0.8430 1:$0.9600
BSZ086P03NS3GATMA1 DISTI # BSZ086P03NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 40A TSDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	25000In Stock	5000:$0.3156
BSZ086P03NS3GATMA1 DISTI # 27084758	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP T/R RoHS: Compliant	3129	3000:$0.2723 1000:$0.3086 500:$0.3716 250:$0.3726 100:$0.3736 27:$0.5199
BSZ086P03NS3 G DISTI # BSZ086P03NS3 G	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: BSZ086P03NS3 G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSZ086P03NS3 G DISTI # SP000473024	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: SP000473024) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.4419 10000:€0.3799 20000:€0.3229 30000:€0.2779 50000:€0.2629
BSZ086P03NS3GXT DISTI # BSZ086P03NS3GATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ086P03NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2439 10000:$0.2359 20000:$0.2269 30000:$0.2189 50000:$0.2159
BSZ086P03NS3GATMA1 DISTI # SP000473024	Infineon Technologies AG	Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: SP000473024) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	5000:€0.3699 10000:€0.3029 20000:€0.2779 30000:€0.2559 50000:€0.2379
BSZ086P03NS3GATMA1 DISTI # 85X4159	Infineon Technologies AG	Bipolar Pre-Biased / Digital Transistor, BRT, P Channel, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V RoHS Compliant: Yes	0
BSZ086P03NS3GATMA1	Infineon Technologies AG	Single P-Channel 30 V 8.6 mOhm 43.2 nC OptiMOS Power Mosfet - TSDSON-8 RoHS: Not Compliant	15000Reel	5000:$0.2600
BSZ086P03NS3 G DISTI # 726-BSZ086P03NS3G	Infineon Technologies AG	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 RoHS: Compliant	57187	1:$0.8000 10:$0.6590 100:$0.4250 1000:$0.3400 5000:$0.2870
BSZ086P03NS3GATMA1 DISTI # 726-BSZ086P03NS3GATM	Infineon Technologies AG	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 RoHS: Compliant	6617	1:$0.8000 10:$0.6590 100:$0.4250 1000:$0.3400 5000:$0.2870
BSZ086P03NS3GXT DISTI # 726-BSZ086P03NS3GXT	Infineon Technologies AG	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 RoHS: Compliant	2925	1:$0.8100 10:$0.6800 100:$0.4400 1000:$0.3500 5000:$0.3000
BSZ086P03NS3GATMA1 DISTI # 8259130	Infineon Technologies AG	MOSFET P-CH 13.5A 30V OPTIMOS P3 TSDSON8, PK	4000	20:£0.5110 200:£0.3080 400:£0.3020
BSZ086P03NS3GATMA1 DISTI # 8259130P	Infineon Technologies AG	MOSFET P-CH 13.5A 30V OPTIMOS P3 TSDSON8, RL	820	200:£0.3080 400:£0.3020
BSZ086P03NS3GATMA1 DISTI # XSFP00000040982	Infineon Technologies AG	RoHS: Compliant	13460	5000:$0.3467 13460:$0.3250
BSZ086P03NS3GATMA1 DISTI # 2443470RL	Infineon Technologies AG	MOSFET, P CH, -30V, -40A, TSDSON-8 RoHS: Compliant	0	1:$1.2800 10:$1.0500 100:$0.6720 1000:$0.5380 5000:$0.5020
BSZ086P03NS3GATMA1 DISTI # 2443470	Infineon Technologies AG	MOSFET, P CH, -30V, -40A, TSDSON-8 RoHS: Compliant	0	1:$1.2800 10:$1.0500 100:$0.6720 1000:$0.5380 5000:$0.5020

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSZ086P03NS3 G OMO.#: OMO-BSZ086P03NS3-G	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NS3GATMA1 OMO.#: OMO-BSZ086P03NS3GATMA1	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NS3GXT OMO.#: OMO-BSZ086P03NS3GXT	MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
	Mfr.#: BSZ086P03NE OMO.#: OMO-BSZ086P03NE-1190	Nuovo e originale
	Mfr.#: BSZ086P03NS3 OMO.#: OMO-BSZ086P03NS3-1190	Nuovo e originale
	Mfr.#: BSZ086P03NS3G OMO.#: OMO-BSZ086P03NS3G-1190	Nuovo e originale
	Mfr.#: BSZ086P03NS3G , TFZV39B OMO.#: OMO-BSZ086P03NS3G-TFZV39B-1190	Nuovo e originale
	Mfr.#: BSZ086P03NS3GATMA1 OMO.#: OMO-BSZ086P03NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 30V 40A TSDSON-8
	Mfr.#: BSZ086P03NS3EGATMA1 OMO.#: OMO-BSZ086P03NS3EGATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 30V 40A TSDSON-8
	Mfr.#: BSZ086P03NS3GATMA1-CUT TAPE OMO.#: OMO-BSZ086P03NS3GATMA1-CUT-TAPE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3000
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1: ~~0,00 USD~~; ~~0,00 USD~~

10: ~~0,00 USD~~; ~~0,00 USD~~

100: ~~0,00 USD~~; ~~0,00 USD~~

500: ~~0,00 USD~~; ~~0,00 USD~~

1000: ~~0,00 USD~~; ~~0,00 USD~~

Iniziare con

BSZ086P03NS3G 6
BSZ086P03NS 10
BSZ086 11
BSZ08 22
BSZ0 192
BSZ 334

BSZ086P03NS3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes