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BSC110N15NS5ATMA1

BSC110N15NS5ATMA1
Mfr. #:
BSC110N15NS5ATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET MV POWER MOS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSC110N15NS5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSC110N15NS5ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PG-TDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
150 V
Id - Corrente di scarico continua:
76 A
Rds On - Resistenza Drain-Source:
11 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
10 V
Qg - Carica cancello:
28 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
125 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
OptiMOS
Confezione:
Bobina
Altezza:
1.27 mm
Lunghezza:
5.9 mm
Serie:
OptiMOS 5
Tipo di transistor:
1 N-Channel
Larghezza:
5.15 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
29 S
Tempo di caduta:
2.9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
3.3 ns
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
14.5 ns
Tempo di ritardo di accensione tipico:
10.3 ns
Parte # Alias:
BSC110N15NS5 SP001181418
Unità di peso:
0.007041 oz
Tags
BSC110N1, BSC110, BSC11, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 11 mOhm 35 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 150V, 76A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Source Voltage Vds:150V; On Resistance
***ineon SCT
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications, PG-TDSON-8, RoHS
***ark
MOSFET, N-CH, 150V, 76A, 150DEG C, 125W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:76A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.8V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 150V, 76A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.8V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Parte # Mfg. Descrizione Azione Prezzo
BSC110N15NS5ATMA1
DISTI # V72:2272_09156828		Infineon Technologies AGTrans MOSFET N-CH 150V 76A T/R4002
  • 3000:$1.2740
  • 1000:$1.3020
  • 500:$1.5110
  • 250:$1.6720
  • 100:$1.7620
  • 25:$1.9910
  • 10:$2.0150
  • 1:$2.3180
BSC110N15NS5ATMA1
DISTI # BSC110N15NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 150V 76A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.4390
BSC110N15NS5ATMA1
DISTI # BSC110N15NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 76A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6211
  • 500:$1.9222
  • 100:$2.3737
  • 10:$2.8950
  • 1:$3.2400
BSC110N15NS5ATMA1
DISTI # BSC110N15NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 150V 76A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6211
  • 500:$1.9222
  • 100:$2.3737
  • 10:$2.8950
  • 1:$3.2400
BSC110N15NS5ATMA1
DISTI # 31024617		Infineon Technologies AGTrans MOSFET N-CH 150V 76A T/R4002
  • 3000:$1.2740
  • 1000:$1.3020
  • 500:$1.5110
  • 250:$1.6720
  • 100:$1.7620
  • 25:$1.9910
  • 10:$2.0150
  • 5:$2.3180
BSC110N15NS5ATMA1
DISTI # BSC110N15NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 150V 48A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC110N15NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.3900
  • 10000:$1.3900
  • 20000:$1.2900
  • 30000:$1.2900
  • 50000:$1.1900
BSC110N15NS5ATMA1
DISTI # BSC110N15NS5		Infineon Technologies AGTrans MOSFET N-CH 150V 48A 8-Pin TDSON T/R (Alt: BSC110N15NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC110N15NS5ATMA1
    DISTI # SP001181418    		Infineon Technologies AGTrans MOSFET N-CH 150V 48A 8-Pin TDSON T/R (Alt: SP001181418)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€1.5900
    • 10000:€1.2900
    • 20000:€1.1900
    • 30000:€1.0900
    • 50000:€1.0900
    BSC110N15NS5ATMA1
    DISTI # 43AC2204    		Infineon Technologies AGMOSFET, N-CH, 150V, 76A, TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:76A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power , RoHS Compliant: Yes1000
    • 1:$3.5600
    • 10:$3.1400
    • 25:$2.8300
    • 50:$2.5300
    • 100:$2.2000
    • 250:$1.8900
    • 500:$1.7200
    • 1000:$1.6300
    BSC110N15NS5ATMA1
    DISTI # 726-BSC110N15NS5ATMA    		Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant    		0
    • 1:$2.7100
    • 10:$2.3000
    • 100:$2.0000
    • 250:$1.9000
    • 500:$1.7000
    • 1000:$1.4400
    • 2500:$1.3600
    • 5000:$1.3100
    BSC110N15NS5ATMA1
    DISTI # 2803377    		Infineon Technologies AGMOSFET, N-CH, 150V, 76A, TDSON-8
    RoHS: Compliant    		0
    • 1:£3.5200
    • 10:£2.7900
    • 100:£2.3000
    BSC110N15NS5ATMA1
    DISTI # C1S322000625215    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		4002
    • 250:$1.6720
    • 100:$1.7620
    • 25:$1.9910
    • 10:$2.0150
    • 1:$2.3180
    BSC110N15NS5ATMA1
    DISTI # 2803377    		Infineon Technologies AGMOSFET, N-CH, 150V, 76A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.0300
    • 10:$2.8300
    • 100:$2.5000
    • 250:$2.3700
    • 500:$2.2500
    • 1000:$2.1400
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    OMO.#: OMO-GG040205170N2P

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    		 Zener Diodes 1.0W 15V
    IPL60R105P7AUMA1

    Mfr.#: IPL60R105P7AUMA1

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    BSC160N15NS5ATMA1

    Mfr.#: BSC160N15NS5ATMA1

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    BSC028N06NSATMA1

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    OMO.#: OMO-BSC028N06NSATMA1

    		 MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
    LTC3779IFE#PBF

    Mfr.#: LTC3779IFE#PBF

    OMO.#: OMO-LTC3779IFE-PBF

    		 Switching Controllers 150V VIN & VOUT Sync 4-Switch Buck-Boost
    PM2110-680K-RC

    Mfr.#: PM2110-680K-RC

    OMO.#: OMO-PM2110-680K-RC-BOURNS

    		 Fixed Inductors 68uH 10%
    GG040205170N2P

    Mfr.#: GG040205170N2P

    OMO.#: OMO-GG040205170N2P-AVX

    		 TVS DIODE 5V 10V 0402
    SMAJ4744A-TP

    Mfr.#: SMAJ4744A-TP

    OMO.#: OMO-SMAJ4744A-TP-MICRO-COMMERCIAL-COMPONENTS

    		 Zener Diodes 1.0W 15V
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di BSC110N15NS5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,70 USD
    2,70 USD
    10
    2,30 USD
    23,00 USD
    100
    1,99 USD
    199,00 USD
    250
    1,89 USD
    472,50 USD
    500
    1,69 USD
    845,00 USD
    1000
    1,43 USD
    1 430,00 USD
    2500
    1,36 USD
    3 400,00 USD
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