FQT7N10TF

FQT7N10TF
Mfr. #:
FQT7N10TF
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET 100V Single
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FQT7N10TF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-223-4
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
1.7 A
Rds On - Resistenza Drain-Source:
350 mOhms
Vgs - Tensione Gate-Source:
25 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Altezza:
1.8 mm
Lunghezza:
6.5 mm
Serie:
FQT7N10
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
3.5 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
1.85 S
Tempo di caduta:
19 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
24 ns
Quantità confezione di fabbrica:
4000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
13 ns
Tempo di ritardo di accensione tipico:
7 ns
Unità di peso:
0.003951 oz
Tags
FQT7N, FQT7, FQT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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    2019-06-21
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    The lack of ProBAR

    2019-06-27
***emi
Power MOSFET, N-Channel, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
*** Source Electronics
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
***ure Electronics
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
***nell
MOSFET, N CH, 100V, 1.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.28o; Available until stocks are exhausted Alternative available
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Parte # Mfg. Descrizione Azione Prezzo
FQT7N10TF
DISTI # V72:2272_06301317
ON Semiconductor100V N-CHANNEL QFET923
  • 500:$0.2165
  • 250:$0.2406
  • 100:$0.2673
  • 25:$0.4308
  • 10:$0.4787
  • 1:$0.5836
FQT7N10TF
DISTI # V36:1790_06301317
ON Semiconductor100V N-CHANNEL QFET0
  • 4000000:$0.1460
  • 2000000:$0.1462
  • 400000:$0.1639
  • 40000:$0.1938
  • 4000:$0.1987
FQT7N10TF
DISTI # FQT7N10TFCT-ND
ON SemiconductorMOSFET N-CH 100V 1.7A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5059In Stock
  • 1000:$0.2245
  • 500:$0.2905
  • 100:$0.3697
  • 10:$0.4950
  • 1:$0.5800
FQT7N10TF
DISTI # FQT7N10TFDKR-ND
ON SemiconductorMOSFET N-CH 100V 1.7A SOT-223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5059In Stock
  • 1000:$0.2245
  • 500:$0.2905
  • 100:$0.3697
  • 10:$0.4950
  • 1:$0.5800
FQT7N10TF
DISTI # FQT7N10TFTR-ND
ON SemiconductorMOSFET N-CH 100V 1.7A SOT-223
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
4000In Stock
  • 28000:$0.1641
  • 12000:$0.1731
  • 8000:$0.1859
  • 4000:$0.1987
FQT7N10TF
DISTI # 33962483
ON Semiconductor100V N-CHANNEL QFET923
  • 42:$0.5836
FQT7N10TF
DISTI # FQT7N10TF
ON SemiconductorTrans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT7N10TF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 28000
  • 40000:$0.1269
  • 24000:$0.1299
  • 16000:$0.1319
  • 8000:$0.1329
  • 4000:$0.1339
FQT7N10TF
DISTI # FQT7N10TF
ON SemiconductorTrans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT7N10TF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 4000
  • 40000:€0.1309
  • 24000:€0.1419
  • 16000:€0.1669
  • 8000:€0.2049
  • 4000:€0.2629
FQT7N10TF
DISTI # FQT7N10TF
ON SemiconductorTrans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: FQT7N10TF)
RoHS: Compliant
Min Qty: 1563
Container: Bulk
Americas - 0
  • 15630:$0.1969
  • 7815:$0.2019
  • 4689:$0.2049
  • 3126:$0.2069
  • 1563:$0.2089
FQT7N10TF
DISTI # 82C4379
ON SemiconductorN CH MOSFET, 100V, 1.7A, SOT-223, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes0
  • 30000:$0.1580
  • 18000:$0.1650
  • 12000:$0.1770
  • 6000:$0.1900
  • 3000:$0.2060
  • 1:$0.2100
FQT7N10TF
DISTI # 31Y1565
ON SemiconductorMOSFET Transistor, N Channel, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V RoHS Compliant: Yes229
  • 1000:$0.2100
  • 500:$0.2310
  • 250:$0.2510
  • 100:$0.2720
  • 50:$0.3300
  • 25:$0.3880
  • 10:$0.4450
  • 1:$0.5450
FQT7N10TF
DISTI # 512-FQT7N10TF
ON SemiconductorMOSFET 100V Single
RoHS: Compliant
2786
  • 1:$0.5400
  • 10:$0.4410
  • 100:$0.2690
  • 1000:$0.2080
  • 4000:$0.1780
  • 8000:$0.1650
  • 24000:$0.1570
  • 48000:$0.1530
FQT7N10TFFairchild Semiconductor CorporationPower Field-Effect Transistor, 1.7A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
1968
  • 1000:$0.1800
  • 500:$0.1900
  • 100:$0.2000
  • 25:$0.2100
  • 1:$0.2300
FQT7N10TF
DISTI # 8075932P
ON SemiconductorMOSFETFAIRCHILDFQT7N10TF, RL3280
  • 200:£0.1150
FQT7N10TF
DISTI # 2453450
ON SemiconductorMOSFET, N CH, 100V, 1.7A, SOT-223-3744
  • 500:£0.1600
  • 250:£0.1830
  • 100:£0.2070
  • 25:£0.3620
  • 5:£0.3850
FQT7N10TF
DISTI # 2453450RL
ON SemiconductorMOSFET, N CH, 100V, 1.7A, SOT-223-3
RoHS: Compliant
0
  • 24000:$0.2420
  • 8000:$0.2540
  • 4000:$0.2740
  • 1000:$0.3200
  • 100:$0.4140
  • 10:$0.6790
  • 1:$0.8310
FQT7N10TF
DISTI # 2453450
ON SemiconductorMOSFET, N CH, 100V, 1.7A, SOT-223-3
RoHS: Compliant
229
  • 24000:$0.2420
  • 8000:$0.2540
  • 4000:$0.2740
  • 1000:$0.3200
  • 100:$0.4140
  • 10:$0.6790
  • 1:$0.8310
Immagine Parte # Descrizione
LM5106SD/NOPB

Mfr.#: LM5106SD/NOPB

OMO.#: OMO-LM5106SD-NOPB

Gate Drivers 100V 1.8A Hb Dr W/ Delay Prog
MJD31CT4G

Mfr.#: MJD31CT4G

OMO.#: OMO-MJD31CT4G

Bipolar Transistors - BJT 3A 100V 15W NPN
BZT52C27-E3-08

Mfr.#: BZT52C27-E3-08

OMO.#: OMO-BZT52C27-E3-08

Zener Diodes 27 Volt 0.41W 5%
BZT52C10-E3-08

Mfr.#: BZT52C10-E3-08

OMO.#: OMO-BZT52C10-E3-08

Zener Diodes 10 Volt 0.41W 5%
S1D

Mfr.#: S1D

OMO.#: OMO-S1D

Rectifiers 200V 1a Glass Passive
NTF2955T1G

Mfr.#: NTF2955T1G

OMO.#: OMO-NTF2955T1G

MOSFET -60V 2.6A P-Channel
NFL18ST507X1C3D

Mfr.#: NFL18ST507X1C3D

OMO.#: OMO-NFL18ST507X1C3D

EMI Filter Circuits 10PF 16V 0.2AMP
LM5106SD/NOPB

Mfr.#: LM5106SD/NOPB

OMO.#: OMO-LM5106SD-NOPB-TEXAS-INSTRUMENTS

Gate Drivers 100V 1.8A Hb Dr W/ Delay Prog
NTF2955T1G

Mfr.#: NTF2955T1G

OMO.#: OMO-NTF2955T1G-ON-SEMICONDUCTOR

Nuovo e originale
BZT52C10-E3-08

Mfr.#: BZT52C10-E3-08

OMO.#: OMO-BZT52C10-E3-08-VISHAY

Zener Diodes 10 Volt 0.41W 5%
Disponibilità
Azione:
Available
Su ordine:
1985
Inserisci la quantità:
Il prezzo attuale di FQT7N10TF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,54 USD
0,54 USD
10
0,44 USD
4,41 USD
100
0,27 USD
26,90 USD
1000
0,21 USD
208,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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