NGTD9R120F2WP

NGTD9R120F2WP
Mfr. #:
NGTD9R120F2WP
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 1200V/85A BR69 VERY FAS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTD9R120F2WP Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTD9R120F2WP Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Confezione:
Massa
Marca:
ON Semiconductor
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Tags
NGTD, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon
***ark
1200V/85A Br69 Very Fast Rectifier Unsawn Wafer Sales / Wjar
***enic
1.2kV +175¡Í@(Tj) Single 2V@15A SMD Switching Diode ROHS
***emi
Rectifier 1200V 15A FS2 bare die
***ical
Diode Switching 1.2KV 2-Pin Die WJAR
Parte # Mfg. Descrizione Azione Prezzo
NGTD9R120F2WP
DISTI # V36:1790_16156786
ON SemiconductorDiode Switching 1.2KV WJAR0
  • 1035000:$0.2616
  • 517500:$0.2620
  • 103500:$0.3155
  • 10350:$0.4216
  • 1035:$0.4400
NGTD9R120F2WP
DISTI # NGTD9R120F2WP-ND
ON SemiconductorDIODE GEN PURP 1.2KV DIE
RoHS: Compliant
Min Qty: 696
Container: Bulk
Temporarily Out of Stock
  • 696:$0.4532
NGTD9R120F2WP
DISTI # NGTD9R120F2WP
ON SemiconductorDiode Fast Switching 1200V 15A Bare DIE - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: NGTD9R120F2WP)
RoHS: Compliant
Min Qty: 1035
Container: Waffle Pack
Americas - 0
  • 10350:$0.2659
  • 5175:$0.2729
  • 3105:$0.2759
  • 2070:$0.2799
  • 1035:$0.2819
NGTD9R120F2WP
DISTI # 92Y3760
ON Semiconductor1200V/85A BR69 VERY FAS / WJAR0
  • 10000:$0.3770
  • 2500:$0.3890
  • 1000:$0.4820
  • 500:$0.5510
  • 100:$0.6240
  • 10:$0.8120
  • 1:$0.9490
NGTD9R120F2WP
DISTI # 863-NGTD9R120F2WP
ON SemiconductorIGBT Transistors 1200V/85A BR69 VERY FAS
RoHS: Compliant
0
  • 696:$0.4100
  • 1000:$0.3240
  • 2500:$0.2870
  • 10000:$0.2760
  • 25000:$0.2680
Immagine Parte # Descrizione
NGTD9R120F2WP

Mfr.#: NGTD9R120F2WP

OMO.#: OMO-NGTD9R120F2WP

IGBT Transistors 1200V/85A BR69 VERY FAS
NGTD9R120F2SWK

Mfr.#: NGTD9R120F2SWK

OMO.#: OMO-NGTD9R120F2SWK

IGBT Transistors 1200V/85A BR69 VERY FAST
NGTD9R120F2SWK

Mfr.#: NGTD9R120F2SWK

OMO.#: OMO-NGTD9R120F2SWK-ON-SEMICONDUCTOR

Diode Switching 1.2KV Containe
NGTD9R120F2WP

Mfr.#: NGTD9R120F2WP

OMO.#: OMO-NGTD9R120F2WP-ON-SEMICONDUCTOR

Diode Switching 1.2KV WJAR
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di NGTD9R120F2WP è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
696
0,41 USD
285,36 USD
1000
0,32 USD
324,00 USD
2500
0,29 USD
717,50 USD
10000
0,28 USD
2 760,00 USD
25000
0,27 USD
6 700,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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