CY14B108N-ZSP25XI

Mfr. #:: CY14B108N-ZSP25XI
Produttore:: Cypress Semiconductor
Descrizione:
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: CY14B108N-ZSP25XI Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: CY14B108N-ZSP25XI maggiori informazioni CY14B108N-ZSP25XI Product Details

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Valore attributo

Tags: CY14B108N-ZSP2, CY14B108N-Z, CY14B108N, CY14B108, CY14B10, CY14B1, CY14B, CY14, CY1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CY14B108N-ZSP25XI Descrizione

***ure Electronics: CY14B108N Series 8 Mb (512 K × 16) Surface Mount nvSRAM - TSOP II-54

***p One Stop Japan: NVRAM NVSRAM Parallel 8Mbit 3V 54-Pin TSOP-II Tray

***et Europe: NVRAM NVSRAM Parallel 8M-Bit 3V 54-Pin TSOP-II

***Components: Cypress Semiconductor, CY14B108N-ZSP25XI

***i-Key: IC NVSRAM 8M PARALLEL 54TSOP

***ark: Nv Sram, 512K X 16Bit, 25Ns, Tsop-Ii-54; Memory Size:8Mbit; Memory Organisation:512K X 16Bit; Read Access Time:25Ns; Write Access Time:25Ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:tsop-Ii; No. Of Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. NV SRAM, 512K X 16BIT, 25NS, TSOP-II-54; Memory Size:8Mbit; Memory Organisation:512K x 16bit; Read Access Time:25ns; Write Access Time:25ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:TSOP-II; No. of Pins:54Pins; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (12-Jan-2017)

***nell: NV SRAM, 512K X 16BIT, 25NS, TSOP-II-54; Dimensione Memoria:8Mbit; Organizzazione Memoria:512K x 16bit; Tempi di Accesso Lettura:25ns; Tempi di Accesso Scrittura:25ns; Tensione di Alimentazione Min:2.7V; Tensione di Alimentazione Max:3.6V; Modello Case Memoria CI:TSOP-II; No. di Pin:54Pin; Tipo di Interfaccia CI:Parallela; Temperatura di Esercizio Min:-40°C; Temperatura di Esercizio Max:85°C; Gamma Prodotti:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: CY14B108N-BA25XI OMO.#: OMO-CY14B108N-BA25XI	NVRAM 8Mb 3V 25ns 512K x 16 nvSRAM
	Mfr.#: CY14B108L-ZS45XI OMO.#: OMO-CY14B108L-ZS45XI	NVRAM 8Mb 3V 45ns 1024K x 8 nvSRAM
	Mfr.#: CY14B108N-BA45XI OMO.#: OMO-CY14B108N-BA45XI	NVRAM 8Mb 3V 45ns 512K x 16 nvSRAM
	Mfr.#: CY14B108N-ZSP25XIT OMO.#: OMO-CY14B108N-ZSP25XIT	NVRAM 8Mb 3V 25ns 512K x 16 nvSRAM
	Mfr.#: CY14B108L-ZS25XIT OMO.#: OMO-CY14B108L-ZS25XIT	NVRAM 8Mb 3V 25ns 1024K x 8 nvSRAM
	Mfr.#: CY14B108L-ZS20XIT OMO.#: OMO-CY14B108L-ZS20XIT	NVRAM 8Mb 3V 20ns 1024K x 8 nvSRAM
	Mfr.#: CY14B108L-BA25XI OMO.#: OMO-CY14B108L-BA25XI	NVRAM 8Mb 3V 25ns 1024K x 8 nvSRAM
	Mfr.#: CY14B108M-ZSP25XIT OMO.#: OMO-CY14B108M-ZSP25XIT-CYPRESS-SEMICONDUCTOR	Nuovo e originale
	Mfr.#: CY14B108L-BA45XI OMO.#: OMO-CY14B108L-BA45XI-CYPRESS-SEMICONDUCTOR	Nuovo e originale
	Mfr.#: CY14B108N-ZSP45XI OMO.#: OMO-CY14B108N-ZSP45XI-CYPRESS-SEMICONDUCTOR	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3000
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Iniziare con

CY14B108N-ZSP2 3
CY14B108N-Z 5
CY14B108N 9
CY14B108 30
CY14B10 240
CY14B1 273
CY14B 372
CY14 575
CY1 1158

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CY14B108N-ZSP25XI

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes