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SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3
Mfr. #:
SIDR870ADP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIDR870ADP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR870ADP-T1-GE3 DatasheetSIDR870ADP-T1-GE3 Datasheet (P4-P6)SIDR870ADP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:
SIDR870ADP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SO-8DC-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
95 A
Rds On - Resistenza Drain-Source:
10.5 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
25.5 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
125 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SID
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
68 S
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
15 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
33 ns
Tempo di ritardo di accensione tipico:
17 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 100V 95A SO-8
***ark
Mosfet, N-Ch, 100V, 95A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 100V, 95A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:95A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Parte # Mfg. Descrizione Azione Prezzo
SIDR870ADP-T1-GE3
DISTI # V72:2272_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 75000:$0.8958
  • 30000:$0.9084
  • 15000:$0.9209
  • 6000:$0.9335
  • 3000:$0.9460
  • 1000:$0.9585
  • 500:$1.1163
  • 250:$1.1842
  • 100:$1.3246
  • 50:$1.5084
  • 25:$1.6760
  • 10:$1.6987
  • 1:$2.2457
SIDR870ADP-T1-GE3
DISTI # V99:2348_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE30
  • 6000:$0.9696
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.9030
  • 3000:$0.9377
SIDR870ADP-T1-GE3
DISTI # 31950099		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 7:$2.2457
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR870ADP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.8479
  • 30000:$0.8709
  • 18000:$0.8959
  • 12000:$0.9339
  • 6000:$0.9619
SIDR870ADP-T1-GE3
DISTI # 59AC7342		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.8270
  • 6000:$0.8600
  • 4000:$0.8930
  • 2000:$0.9930
  • 1000:$1.0500
  • 1:$1.1200
SIDR870ADP-T1-GE3
DISTI # 50AC9645		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5622
  • 500:$1.1700
  • 250:$1.2600
  • 100:$1.3400
  • 50:$1.4700
  • 25:$1.6000
  • 10:$1.7300
  • 1:$2.0800
SIDR870ADP-T1-GE3
DISTI # 78-SIDR870ADP-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		8917
  • 1:$2.0600
  • 10:$1.7100
  • 100:$1.3300
  • 500:$1.1600
  • 1000:$0.9600
  • 3000:$0.8940
  • 6000:$0.8600
  • 9000:$0.8270
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO
RoHS: Compliant		5622
  • 1000:$1.5600
  • 500:$1.8800
  • 100:$2.2800
  • 10:$2.8400
  • 1:$3.1600
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO5652
  • 500:£0.8910
  • 250:£0.9560
  • 100:£1.0200
  • 10:£1.3400
  • 1:£1.8000
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Mfr.#: B360-13-F

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 Thick Film Resistors - SMD 1/4watt 10Kohms 1%
MAX4080SAUA+

Mfr.#: MAX4080SAUA+

OMO.#: OMO-MAX4080SAUA--MAXIM-INTEGRATED

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ADA4700-1ARDZ

Mfr.#: ADA4700-1ARDZ

OMO.#: OMO-ADA4700-1ARDZ-ANALOG-DEVICES-INC-ADI

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CRCW120610K0FKEA

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Disponibilità
Azione:
Available
Su ordine:
1991
Inserisci la quantità:
Il prezzo attuale di SIDR870ADP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,06 USD
2,06 USD
10
1,71 USD
17,10 USD
100
1,33 USD
133,00 USD
500
1,16 USD
580,00 USD
1000
0,96 USD
960,00 USD
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