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A3G22H400-04SR3

A3G22H400-04SR3
Mfr. #:
A3G22H400-04SR3
Produttore:
NXP Semiconductors
Descrizione:
RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A3G22H400-04SR3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
A3G22H400-04SR3 maggiori informazioni A3G22H400-04SR3 Product Details
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Doppio canale N
Tecnologia:
GaN
Id - Corrente di scarico continua:
29.7 mA
Vds - Tensione di rottura Drain-Source:
150 V
Guadagno:
15.3 dB
Potenza di uscita:
79 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
NI-780S-4
Confezione:
Bobina
Frequenza operativa:
1800 MHz to 2200 MHz
Serie:
A3G22H400
Tipo:
MOSFET di potenza RF
Marca:
Semiconduttori NXP
Numero di canali:
2 Channel
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
250
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 8 V
Vgs th - Tensione di soglia gate-source:
- 2.3 V
Parte # Alias:
935370222128
Tags
A3G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
RF Power GaN Portfolio
NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.
Immagine Parte # Descrizione
A3G22H400-04SR3

Mfr.#: A3G22H400-04SR3

OMO.#: OMO-A3G22H400-04SR3

 RF MOSFET Transistors RF Power GaN Trnsitr 1805-2200 MHz 79W48V
Disponibilità
Azione:
Available
Su ordine:
3500
Inserisci la quantità:
Il prezzo attuale di A3G22H400-04SR3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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