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BSZ12DN20NS3 G

BSZ12DN20NS3 G
Mfr. #:
BSZ12DN20NS3 G
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ12DN20NS3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSZ12DN20NS3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSDSON-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
11.3 A
Rds On - Resistenza Drain-Source:
108 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
50 W
Configurazione:
Separare
Confezione:
Bobina
Altezza:
1.1 mm
Lunghezza:
3.3 mm
Tipo di transistor:
1 N-Channel
Larghezza:
3.3 mm
Marca:
Tecnologie Infineon
Transconduttanza diretta - Min:
12 S, 6 S
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
5000
sottocategoria:
MOSFET
Parte # Alias:
BSZ12DN20NS3GATMA1 BSZ12DN2NS3GXT SP000781784
Unità di peso:
0.003527 oz
Tags
BSZ12DN20NS, BSZ12D, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Parte # Mfg. Descrizione Azione Prezzo
BSZ12DN20NS3GATMA1
DISTI # V72:2272_06384561		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		4816
  • 1:$0.5330
BSZ12DN20NS3GATMA1
DISTI # V36:1790_06384561		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		0
  • 5000000:$0.4159
  • 2500000:$0.4161
  • 500000:$0.4428
  • 50000:$0.4905
  • 5000:$0.4986
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5922In Stock
  • 1000:$0.5791
  • 500:$0.7336
  • 100:$0.8880
  • 10:$1.1390
  • 1:$1.2700
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5922In Stock
  • 1000:$0.5791
  • 500:$0.7336
  • 100:$0.8880
  • 10:$1.1390
  • 1:$1.2700
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 11.3A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		5000In Stock
  • 10000:$0.4798
  • 5000:$0.4985
BSZ12DN20NS3 G
DISTI # 32907815		Infineon Technologies AG05000
  • 17:$1.5375
BSZ12DN20NS3GATMA1
DISTI # 33936972		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		4816
  • 15:$0.5330
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 782
Container: Bulk		Americas - 0
  • 7820:$0.4059
  • 3910:$0.4129
  • 2346:$0.4279
  • 1564:$0.4439
  • 782:$0.4609
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ12DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.4529
  • 30000:$0.4609
  • 20000:$0.4769
  • 10000:$0.4949
  • 5000:$0.5139
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3 G		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: BSZ12DN20NS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 250000:$0.4519
  • 125000:$0.4577
  • 50000:$0.4636
  • 25000:$0.4697
  • 15000:$0.4824
  • 10000:$0.4958
  • 5000:$0.5100
BSZ12DN20NS3GATMA1
DISTI # BSZ12DN20NS3G		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R - Bulk (Alt: BSZ12DN20NS3G)
RoHS: Not Compliant
Min Qty: 758
Container: Bulk		Americas - 0
  • 7580:$0.4569
  • 3790:$0.4649
  • 2274:$0.4809
  • 1516:$0.4999
  • 758:$0.5179
BSZ12DN20NS3GATMA1
DISTI # SP000781784		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON T/R (Alt: SP000781784)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.4159
  • 30000:€0.4479
  • 20000:€0.4849
  • 10000:€0.5289
  • 5000:€0.6469
BSZ12DN20NS3GATMA1
DISTI # 13AC8354		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.108ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes779
  • 1000:$0.6120
  • 500:$0.7760
  • 250:$0.8880
  • 100:$1.0000
  • 50:$1.0900
  • 25:$1.1800
  • 10:$1.2700
  • 1:$1.4300
BSZ12DN20NS3 G
DISTI # 726-BSZ12DN20NS3G		Infineon Technologies AGMOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3
RoHS: Compliant		13365
  • 1:$1.1700
  • 10:$1.0000
  • 100:$0.7680
  • 500:$0.6790
  • 1000:$0.5360
  • 5000:$0.4750
BSZ12DN20NS3GInfineon Technologies AGPower Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		14295
  • 1000:$0.4700
  • 500:$0.5000
  • 100:$0.5200
  • 25:$0.5400
  • 1:$0.5800
BSZ12DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		70155
  • 1000:$0.4200
  • 500:$0.4400
  • 100:$0.4600
  • 25:$0.4800
  • 1:$0.5200
BSZ12DN20NS3GATMA1
DISTI # 8259257P		Infineon Technologies AGMOSFET N-CH 11.3A 200V OPTIMOS3 TSDSON8, RL3720
  • 100:£0.3740
BSZ12DN20NS3GATMA1
DISTI # 2725826		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON5808
  • 500:£0.6170
  • 250:£0.7070
  • 100:£0.7970
  • 10:£1.0600
  • 1:£1.3100
BSZ12DN20NS3 G
DISTI # C1S322000454510		Infineon Technologies AGTrans MOSFET N-CH 200V 11.3A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4900
  • 1000:$0.5570
  • 500:$0.5930
  • 200:$0.6410
  • 100:$0.6750
  • 50:$0.7910
  • 10:$0.9290
  • 5:$1.2300
BSZ12DN20NS3GATMA1
DISTI # 2725826		Infineon Technologies AGMOSFET, N-CH, 200V, 11.3A, TSDSON
RoHS: Compliant		719
  • 1000:$0.9270
  • 500:$1.1800
  • 100:$1.5200
  • 10:$1.9200
  • 1:$2.1700
Immagine Parte # Descrizione
LT1722CS5#TRMPBF

Mfr.#: LT1722CS5#TRMPBF

OMO.#: OMO-LT1722CS5-TRMPBF

 High Speed Operational Amplifiers 1x 200MHz L N Prec Op Amps
BAV70LT1G

Mfr.#: BAV70LT1G

OMO.#: OMO-BAV70LT1G

 Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
LT8620EMSE#PBF

Mfr.#: LT8620EMSE#PBF

OMO.#: OMO-LT8620EMSE-PBF

 Switching Voltage Regulators 62V, 2A Synchronous Step-Down Regulator with 2.5 A Quiescent Current
744272332

Mfr.#: 744272332

OMO.#: OMO-744272332

 Common Mode Chokes / Filters WE-SL5 Bifilar 2x3300uH 650mA
DO1608C-103MLC

Mfr.#: DO1608C-103MLC

OMO.#: OMO-DO1608C-103MLC-1190

 Fixed Inductors DO1608C Pwr Inductor 10 uH 20 % 1.5 A
MI0603L221R-10

Mfr.#: MI0603L221R-10

OMO.#: OMO-MI0603L221R-10-LAIRD-TECHNOLOGIES

 EMI Filter Beads, Chips & Arrays 220ohms 100MHz 2A Monolithic 0603 SMD
BAV70LT1G

Mfr.#: BAV70LT1G

OMO.#: OMO-BAV70LT1G-ON-SEMICONDUCTOR

 Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
RC0603FR-076K49L

Mfr.#: RC0603FR-076K49L

OMO.#: OMO-RC0603FR-076K49L-YAGEO

 Thick Film Resistors - SMD 6.49K OHM 1%
744272332

Mfr.#: 744272332

OMO.#: OMO-744272332-WURTH-ELECTRONICS

 CMC 3.3MH 650MA 2LN 8.9 KOHM SMD
Disponibilità
Azione:
12
Su ordine:
1995
Inserisci la quantità:
Il prezzo attuale di BSZ12DN20NS3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,17 USD
1,17 USD
10
1,00 USD
10,00 USD
100
0,77 USD
76,80 USD
500
0,68 USD
339,50 USD
1000
0,54 USD
536,00 USD
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