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FFSD10120A

FFSD10120A
Mfr. #:
FFSD10120A
Produttore:
ON Semiconductor / Fairchild
Descrizione:
Schottky Diodes & Rectifiers Silicon Carbide Schottky Diode
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FFSD10120A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FFSD10120A maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Diodi e raddrizzatori Schottky
RoHS:
Y
Prodotto:
Diodi Schottky al carburo di silicio
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
D-PAK-3
Se - Corrente diretta:
10 A
Vrrm - Tensione inversa ripetitiva:
1200 V
Vf - Tensione diretta:
1.45 V
Ifsm - Corrente diretta in avanti:
90 A
Configurazione:
Separare
Tecnologia:
SiC
Ir - Corrente inversa:
200 uA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
FFSD10120A
Confezione:
Bobina
Marca:
ON Semiconductor / Fairchild
Pd - Dissipazione di potenza:
283 W
Tipologia di prodotto:
Diodi e raddrizzatori Schottky
Quantità confezione di fabbrica:
2500
sottocategoria:
Diodi e raddrizzatori
Vr - Tensione inversa:
1200 V
Unità di peso:
0.009184 oz
Tags
FFSD10, FFSD1, FFSD, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 22A, 1200V V(RRM), Silicon Carbide, TO-252AA
***ical
Rectifier Diode Schottky SiC 1.2KV 22A 3-Pin(2+Tab) DPAK T/R
***rchild Semiconductor
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size & cost.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
Parte # Mfg. Descrizione Azione Prezzo
FFSD10120A
DISTI # 26994630		ON SemiconductorSilicon Carbide Schottky Diode160000
  • 2500:$3.3910
FFSD10120A
DISTI # FFSD10120AOSCT-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		2483In Stock
  • 1000:$3.2689
  • 500:$3.8760
  • 100:$4.5532
  • 10:$5.5570
  • 1:$6.1900
FFSD10120A
DISTI # FFSD10120AOSDKR-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		2483In Stock
  • 1000:$3.2689
  • 500:$3.8760
  • 100:$4.5532
  • 10:$5.5570
  • 1:$6.1900
FFSD10120A
DISTI # FFSD10120AOSTR-ND		ON SemiconductorDIODE SCHOTTKY 1.2KV TO252
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$3.3827
FFSD10120A
DISTI # V36:1790_18470534		ON SemiconductorSilicon Carbide Schottky Diode0
  • 2500000:$2.8220
  • 1250000:$2.8240
  • 250000:$3.0140
  • 25000:$3.3380
  • 2500:$3.3910
FFSD10120A
DISTI # FFSD10120A		ON SemiconductorDiode SiC Schottky 1200V 22A 3-Pin TO-252 T/R - Tape and Reel (Alt: FFSD10120A)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$2.8900
  • 15000:$2.9900
  • 2500:$3.0900
  • 5000:$3.0900
  • 10000:$3.0900
FFSD10120A
DISTI # FFSD10120A		ON SemiconductorDiode SiC Schottky 1200V 22A 3-Pin TO-252 T/R (Alt: FFSD10120A)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€2.9900
  • 15000:€3.1900
  • 10000:€3.2900
  • 5000:€3.3900
  • 2500:€3.6900
FFSD10120A
DISTI # 512-FFSD10120A		ON SemiconductorSchottky Diodes & Rectifiers Silicon Carbide Schottky Diode
RoHS: Compliant		3847
  • 1:$6.4100
  • 10:$5.4400
  • 100:$4.7200
  • 250:$4.4800
  • 500:$4.0200
  • 1000:$3.4700
Immagine Parte # Descrizione
IRS21867STRPBF

Mfr.#: IRS21867STRPBF

OMO.#: OMO-IRS21867STRPBF

 Gate Drivers Hi CUR Iout = 4A robust HS/LS Gt Drvr
SMBJ5338B-TP

Mfr.#: SMBJ5338B-TP

OMO.#: OMO-SMBJ5338B-TP

 Zener Diodes 5W 5.1V
UJ3C065080B3

Mfr.#: UJ3C065080B3

OMO.#: OMO-UJ3C065080B3

 MOSFET 650V/80mOhm SiC CASCODE G3
FDP060AN08A0

Mfr.#: FDP060AN08A0

OMO.#: OMO-FDP060AN08A0

 MOSFET 75V 80a .6Ohms/VGS=1V
FDD86567-F085

Mfr.#: FDD86567-F085

OMO.#: OMO-FDD86567-F085

 MOSFET NMOS DPAK 60V 3.2 MOHM
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2

 Programmers - Processor Based STM8S STM32 Programr 5V USB 2.0 JTAG DFU
LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C

 Development Boards & Kits - TMS320 C2000 F280049C PICCOLO LAUNCHPAD
IRS21867STRPBF

Mfr.#: IRS21867STRPBF

OMO.#: OMO-IRS21867STRPBF-INFINEON-TECHNOLOGIES

 Gate Drivers Hi CUR Iout = 4A robust HS/LS Gt Drv
ST-LINK/V2

Mfr.#: ST-LINK/V2

OMO.#: OMO-ST-LINK-V2-STMICROELECTRONICS

 Nuovo e originale
LAUNCHXL-F280049C

Mfr.#: LAUNCHXL-F280049C

OMO.#: OMO-LAUNCHXL-F280049C-TEXAS-INSTRUMENTS

 LAUNCHPAD TMS320F280049C EVAL BD
Disponibilità
Azione:
Available
Su ordine:
1986
Inserisci la quantità:
Il prezzo attuale di FFSD10120A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
6,41 USD
6,41 USD
10
5,44 USD
54,40 USD
100
4,72 USD
472,00 USD
250
4,48 USD
1 120,00 USD
500
4,02 USD
2 010,00 USD
1000
3,47 USD
3 470,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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