IPN80R1K4P7ATMA1

Mfr. #:: IPN80R1K4P7ATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-CHANNEL 800V 4A SOT223
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPN80R1K4P7ATMA1 Scheda dati
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Tags: IPN80R1K4, IPN80R1, IPN80, IPN8, IPN

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
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Step2:
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IPN80R1K4P7ATMA1 Descrizione

***et: Power Transistor MOSFET N-Channel Enhancement 800V 4A 3-Pin SOT-223

***ure Electronics: Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS Power Mosfet - SOT-223

***i-Key: MOSFET N-CHANNEL 800V 4A SOT223

***ical: Trans MOSFET N-CH 800V 4A T/R

***p One Stop Japan: Trans MOSFET N-CH 800V 4A

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 800V, 4A, 7W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 4A, 7W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:7W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 800V, 4A, 7W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):1.2ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:7W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPN80R1K4P7ATMA1 Maggiori informazioni

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPN80R1K4P7ATMA1 DISTI # V72:2272_18205931	Infineon Technologies AG	IPN80R1K4P7ATMA1	2914	1000:$0.3817 500:$0.4724 250:$0.5389 100:$0.5543 25:$0.7200 10:$0.8010 1:$0.8761
IPN80R1K4P7ATMA1 DISTI # V36:1790_18205931	Infineon Technologies AG	IPN80R1K4P7ATMA1	0	3000000:$0.3053 1500000:$0.3056 300000:$0.3315 30000:$0.3776 3000:$0.3853
IPN80R1K4P7ATMA1 DISTI # IPN80R1K4P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CHANNEL 800V 4A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	26In Stock	1000:$0.4252 500:$0.5386 100:$0.6520 10:$0.8360 1:$0.9400
IPN80R1K4P7ATMA1 DISTI # IPN80R1K4P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 800V 4A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	26In Stock	1000:$0.4252 500:$0.5386 100:$0.6520 10:$0.8360 1:$0.9400
IPN80R1K4P7ATMA1 DISTI # IPN80R1K4P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 800V 4A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.3523 6000:$0.3660 3000:$0.3853
IPN80R1K4P7ATMA1 DISTI # 32380992	Infineon Technologies AG	IPN80R1K4P7ATMA1	3000	3000:$0.5406
IPN80R1K4P7ATMA1 DISTI # 30287439	Infineon Technologies AG	IPN80R1K4P7ATMA1	2914	20:$0.8761
IPN80R1K4P7ATMA1 DISTI # IPN80R1K4P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPN80R1K4P7ATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.3329 18000:$0.3389 12000:$0.3499 6000:$0.3639 3000:$0.3769
IPN80R1K4P7ATMA1 DISTI # SP001657528	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001657528) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€0.3109 18000:€0.3349 12000:€0.3629 6000:€0.3959 3000:€0.4849
IPN80R1K4P7ATMA1 DISTI # 93AC7125	Infineon Technologies AG	MOSFET, N-CH, 800V, 4A, 7W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2780	1000:$0.3980 500:$0.5040 250:$0.5370 100:$0.5700 50:$0.6270 25:$0.6840 10:$0.7410 1:$0.8690
IPN80R1K4P7ATMA1 DISTI # 726-IPN80R1K4P7ATMA1	Infineon Technologies AG	MOSFET LOW POWER_NEW RoHS: Compliant	17174	1:$0.8600 10:$0.7340 100:$0.5640 500:$0.4990 1000:$0.3940 3000:$0.3490 9000:$0.3360 24000:$0.3250
IPN80R1K4P7ATMA1	Infineon Technologies AG	Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS Power Mosfet - SOT-223 RoHS: Not Compliant	3000Reel	3000:$0.3300
IPN80R1K4P7ATMA1 DISTI # 2986476	Infineon Technologies AG	MOSFET, N-CH, 800V, 4A, 7W, SOT-223	2755	500:£0.3620 250:£0.3860 100:£0.4090 10:£0.5820 1:£0.7130
IPN80R1K4P7ATMA1 DISTI # 2986476	Infineon Technologies AG	MOSFET, N-CH, 800V, 4A, 7W, SOT-223 RoHS: Compliant	2750	1000:$0.5250 500:$0.6170 250:$0.6710 100:$0.7240 25:$1.0400 5:$1.1400
IPN80R1K4P7ATMA1 DISTI # XSFP00000106010	Infineon Technologies AG	RoHS: Compliant	6000 in Stock0 on Order	6000:$0.4400 3000:$0.4714

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPN80R1K2P7ATMA1 OMO.#: OMO-IPN80R1K2P7ATMA1	MOSFET LOW POWER_NEW
	Mfr.#: IPN80R1K4P7ATMA1 OMO.#: OMO-IPN80R1K4P7ATMA1	MOSFET LOW POWER_NEW
	Mfr.#: IPN80R1K2P7ATMA1-CUT TAPE OMO.#: OMO-IPN80R1K2P7ATMA1-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: IPN80R1K4P7ATMA1-CUT TAPE OMO.#: OMO-IPN80R1K4P7ATMA1-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: IPN80R1K2P7ATMA1 OMO.#: OMO-IPN80R1K2P7ATMA1-INFINEON-TECHNOLOGIES	COOLMOS P7 800V SOT-223
	Mfr.#: IPN80R1K4P7 OMO.#: OMO-IPN80R1K4P7-1190	Nuovo e originale
	Mfr.#: IPN80R1K4P7ATMA1 OMO.#: OMO-IPN80R1K4P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL 800V 4A SOT223

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di IPN80R1K4P7ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,46 USD~~; ~~0,46 USD~~

10: ~~0,44 USD~~; ~~4,35 USD~~

100: ~~0,41 USD~~; ~~41,22 USD~~

500: ~~0,39 USD~~; ~~194,65 USD~~

1000: ~~0,37 USD~~; ~~366,40 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

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IPN80R1K4P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes