MRF1535FNT1

MRF1535FNT1
Mfr. #:
MRF1535FNT1
Produttore:
NXP Semiconductors
Descrizione:
RF MOSFET Transistors RF LDMOS FET TO-272N
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MRF1535FNT1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
MRF1535FNT1 maggiori informazioni MRF1535FNT1 Product Details
Attributo del prodotto
Valore attributo
Produttore
NXP / Freescale
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
MRF1535N
Tipo
MOSFET di potenza RF
Confezione
Bobina
Unità di peso
0.045124 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-272 EP-6
Tecnologia
si
Pd-Power-Dissipazione
135 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 65 C
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
6 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Resistenza
700 mOhms
Polarità del transistor
Canale N
Tags
MRF153, MRF15, MRF1, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MRF15xx Lateral N-Ch Broadband RF Power MOSFETs
NXP MRF15xx Lateral N-Channel Broadband RF Power MOSFETs are designed for broadband commercial and industrial applications with frequencies of 175 MHz or 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 7.5 volt or 12.5 volt portable FM equipment.Learn More
Parte # Mfg. Descrizione Azione Prezzo
MRF1535FNT1
DISTI # MRF1535FNT1CT-ND
NXP SemiconductorsIC MOSFET RF N-CHAN TO272-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
395In Stock
  • 100:$21.5525
  • 10:$25.2390
  • 1:$27.3700
MRF1535FNT1
DISTI # MRF1535FNT1DKR-ND
NXP SemiconductorsIC MOSFET RF N-CHAN TO272-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
395In Stock
  • 100:$21.5525
  • 10:$25.2390
  • 1:$27.3700
MRF1535FNT1
DISTI # MRF1535FNT1TR-ND
NXP SemiconductorsFET RF 40V 520MHZ TO272-6
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Limited Supply - Call
  • 500:$18.9975
MRF1535FNT1
DISTI # MRF1535FNT1
Avnet, Inc.Trans MOSFET N-CH 40V 6A 6-Pin TO-272 EP T/R - Tape and Reel (Alt: MRF1535FNT1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 500:$18.4900
  • 1000:$18.4900
  • 2000:$18.3900
  • 3000:$18.3900
  • 5000:$17.9900
MRF1535FNT1
DISTI # MRF1535FNT1
Avnet, Inc.Trans MOSFET N-CH 40V 6A 6-Pin TO-272 EP T/R (Alt: MRF1535FNT1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel
Asia - 0
    MRF1535FNT1
    DISTI # 22M7857
    NXP SemiconductorsLateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V0
    • 1:$27.5400
    MRF1535FNT1
    DISTI # 61AC0764
    NXP SemiconductorsRF FET, 60V, 520MHZ-135MHZ, TO-272,Drain Source Voltage Vds:60V,Continuous Drain Current Id:-,Power Dissipation Pd:135W,Operating Frequency Min:520MHz,Operating Frequency Max:135MHz,RF Transistor Case:TO-272,No. of Pins:6Pins, RoHS Compliant: Yes499
    • 1:$27.3700
    • 10:$25.2500
    • 25:$22.0300
    • 50:$21.8000
    • 100:$21.5600
    • 250:$20.6500
    • 500:$19.0000
    MRF1535FNT1
    DISTI # 841-MRF1535FNT1
    NXP SemiconductorsRF MOSFET Transistors RF LDMOS FET TO-272N
    RoHS: Compliant
    471
    • 1:$27.3700
    • 5:$26.1600
    • 10:$25.2500
    • 25:$22.0300
    • 100:$21.5600
    • 250:$20.6500
    • 500:$19.0000
    MRF1535FNT1
    DISTI # MRF1535FNT1
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    0
    • 500:$23.4000
    MRF1535FNT1
    DISTI # 2890599
    NXP SemiconductorsRF FET, 60V, 520MHZ-135MHZ, TO-272
    RoHS: Compliant
    499
    • 1:$43.6300
    • 10:$40.2300
    • 100:$34.3600
    MRF1535FNT1
    DISTI # 2890599
    NXP SemiconductorsRF FET, 60V, 520MHZ-135MHZ, TO-272
    RoHS: Compliant
    499
    • 1:£20.7000
    • 5:£19.7900
    • 10:£16.6700
    • 50:£16.1500
    • 100:£15.6200
    Immagine Parte # Descrizione
    MRF1507

    Mfr.#: MRF1507

    OMO.#: OMO-MRF1507-1190

    Nuovo e originale
    MRF1508

    Mfr.#: MRF1508

    OMO.#: OMO-MRF1508-1190

    Nuovo e originale
    MRF1511N

    Mfr.#: MRF1511N

    OMO.#: OMO-MRF1511N-1190

    Nuovo e originale
    MRF1535N

    Mfr.#: MRF1535N

    OMO.#: OMO-MRF1535N-1190

    Nuovo e originale
    MRF1550FN

    Mfr.#: MRF1550FN

    OMO.#: OMO-MRF1550FN-1190

    Nuovo e originale
    MRF1570FN

    Mfr.#: MRF1570FN

    OMO.#: OMO-MRF1570FN-1190

    Nuovo e originale
    MRF1570FT1

    Mfr.#: MRF1570FT1

    OMO.#: OMO-MRF1570FT1-1152

    RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272
    MRF1570N

    Mfr.#: MRF1570N

    OMO.#: OMO-MRF1570N-1190

    Nuovo e originale
    MRF150

    Mfr.#: MRF150

    OMO.#: OMO-MRF150-319

    RF MOSFET Transistors 5-150MHz 150Watts 50Volt Gain 17dB
    MRF1511NT1

    Mfr.#: MRF1511NT1

    OMO.#: OMO-MRF1511NT1-NXP-SEMICONDUCTORS

    RF MOSFET Transistors RF LDMOS FET PLD1.5N
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di MRF1535FNT1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    26,98 USD
    26,98 USD
    10
    25,64 USD
    256,36 USD
    100
    24,29 USD
    2 428,65 USD
    500
    22,94 USD
    11 468,65 USD
    1000
    21,59 USD
    21 588,00 USD
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