We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Immagine | Parte # | Descrizione |
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Mfr.#: SQM200JB-82R OMO.#: OMO-SQM200JB-82R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-11R OMO.#: OMO-SQM200JB-11R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-0R24 OMO.#: OMO-SQM200JB-0R24 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-18K OMO.#: OMO-SQM200JB-18K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-20K OMO.#: OMO-SQM200JB-20K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-82K OMO.#: OMO-SQM200JB-82K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-0R11 OMO.#: OMO-SQM200JB-0R11 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-0R13 OMO.#: OMO-SQM200JB-0R13 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-470R OMO.#: OMO-SQM200JB-470R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200N041M1LGE3 OMO.#: OMO-SQM200N041M1LGE3-1190 |
Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
