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FDL100N50F

FDL100N50F
Mfr. #:
FDL100N50F
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET UniFET 500V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDL100N50F Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-264-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
500 V
Id - Corrente di scarico continua:
100 A
Rds On - Resistenza Drain-Source:
43 mOhms
Vgs - Tensione Gate-Source:
30 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.5 kW
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
UniFET
Confezione:
Tubo
Altezza:
26.4 mm
Lunghezza:
20.2 mm
Serie:
FDL100N50F
Tipo di transistor:
1 N-Channel
Tipo:
RFET
Larghezza:
5.2 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
95 S
Tempo di caduta:
105 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
186 ns
Quantità confezione di fabbrica:
375
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
202 ns
Tempo di ritardo di accensione tipico:
63 ns
Unità di peso:
0.238311 oz
Tags
FDL10, FDL1, FDL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 100 A, 55 mΩ, TO-264
*** Source Electronics
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube / MOSFET N-CH 500V 100A TO-264
***nell
MOSFET, N-CH, 500V, 100A, TO-264AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V
***roFlash
Power Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***el Electronic
DC DC Converters 1 (Unlimited) 1 8-SMD Module, 5 Leads Surface Mount Isolated Module ITE (Commercial) ECONOLINE R1SE (E-Series) (1W) -40°C~85°C 0.50Lx0.42W x 0.26 H 12.8mmx10.7mmx6.7mm Module DC-DC 5VIN 1-OUT 5V 0.2A 1W 5-Pin SMD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, QFET®, FRFET®, 500 V, 40 A, 110 mΩ, TO-264
***r Electronics
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
*** Electronics
Trans MOSFET N-CH 400V 50A 3-Pin(3+Tab) TO-264 Rail
***ser
MOSFETs 400V N-Channel QFET
Parte # Mfg. Descrizione Azione Prezzo
FDL100N50F
DISTI # C1S541901537904		ON SemiconductorMOSFETs
RoHS: Compliant		413
  • 375:$8.2200
FDL100N50F
DISTI # FDL100N50F-ND		ON SemiconductorMOSFET N-CH 500V 100A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		881In Stock
  • 375:$12.6847
  • 10:$16.3670
  • 1:$18.0000
FDL100N50F
DISTI # FDL100N50F		ON SemiconductorTrans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA - Rail/Tube (Alt: FDL100N50F)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 112
  • 1:$8.6900
  • 10:$8.6900
  • 25:$8.6900
  • 50:$8.6900
  • 100:$8.6900
  • 500:$7.9900
  • 1000:$7.8900
FDL100N50F
DISTI # 31Y1379		ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:500V,On Resistance Rds(on):0.043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes310
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 50:$12.9500
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50F
DISTI # 512-FDL100N50F		ON SemiconductorMOSFET UniFET 500V
RoHS: Compliant		836
  • 1:$15.6200
  • 10:$14.3600
  • 25:$13.7700
  • 100:$12.1300
  • 250:$11.5400
  • 500:$10.7900
FDL100N50FFairchild Semiconductor CorporationPower Field-Effect Transistor, 100A I(D), 500V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
RoHS: Compliant		2570
  • 1000:$9.7400
  • 500:$10.2500
  • 100:$10.6700
  • 25:$11.1300
  • 1:$11.9800
FDL100N50F
DISTI # 7599128		ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, EA64
  • 1:£13.1900
  • 13:£12.1300
FDL100N50F
DISTI # 7599128P		ON SemiconductorMOSFET N-CH 500V 100A UNIFET TO264AA, TU446
  • 13:£12.1300
FDL100N50F
DISTI # 2453857		ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant		602
  • 1:£12.2300
  • 5:£11.8300
  • 10:£10.4200
  • 50:£9.8100
  • 100:£9.1900
FDL100N50F
DISTI # 2453857		ON SemiconductorMOSFET, N-CH, 500V, 100A, TO-264AA-3
RoHS: Compliant		310
  • 1:$24.7200
  • 10:$22.7300
  • 25:$21.7900
  • 100:$19.2000
  • 250:$18.2600
  • 500:$17.0800
  • 1000:$15.6700
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Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di FDL100N50F è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
11,63 USD
11,63 USD
10
10,69 USD
106,90 USD
25
10,25 USD
256,25 USD
100
9,03 USD
903,00 USD
250
8,58 USD
2 145,00 USD
500
8,03 USD
4 015,00 USD
1000
7,92 USD
7 920,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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