PD55035S-E

PD55035S-E
Mfr. #:
PD55035S-E
Produttore:
STMicroelectronics
Descrizione:
RF MOSFET Transistors POWER RF Transistor
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PD55035S-E Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD55035S-E DatasheetPD55035S-E Datasheet (P4-P6)PD55035S-E Datasheet (P7-P9)PD55035S-E Datasheet (P10-P12)PD55035S-E Datasheet (P13-P15)PD55035S-E Datasheet (P16-P18)PD55035S-E Datasheet (P19-P21)PD55035S-E Datasheet (P22)
ECAD Model:
Maggiori informazioni:
PD55035S-E maggiori informazioni PD55035S-E Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
7 A
Vds - Tensione di rottura Drain-Source:
40 V
Guadagno:
16.9 dB
Potenza di uscita:
35 W
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerSO-10RF-Straight-4
Confezione:
Tubo
Configurazione:
Separare
Altezza:
3.5 mm
Lunghezza:
7.5 mm
Frequenza operativa:
1 GHz
Serie:
PD55035-E
Tipo:
MOSFET di potenza RF
Larghezza:
9.4 mm
Marca:
STMicroelectronics
Transconduttanza diretta - Min:
2.5 S
Modalità canale:
Aumento
Sensibile all'umidità:
Pd - Dissipazione di potenza:
95 W
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
400
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
20 V
Unità di peso:
0.105822 oz
Tags
PD55035S, PD5503, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***v
    D***v
    RU

    The order was received. only long went, but it is not the fault of the seller and the russian post. thanks to the seller, the goods are normal, and the equipment and in work.

    2019-01-22
    A***n
    A***n
    RU

    Came in 20 days, the plug is very tight

    2019-01-27
    E**x
    E**x
    RU

    Fast delivery, sociable seller, all as in the description!

    2019-03-31
    L***A
    L***A
    RU

    The quality of the goods from this seller as always on top

    2019-02-08
***ical
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***ser
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This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and good switching characteristic offering superior performance in application.
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***nell
MOSFET, P CH, W/D, 40V, 7.2A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-7.2A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:4.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***(Formerly Allied Electronics)
SI4909DY-T1-GE3 Dual P-channel MOSFET Transistor; 6.5 A; 40 V; 8-Pin SOIC
***et Europe
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40V 8A 27m´Î@10V8A 3.2W 2.5V@250Ã×A 2 P-Channel SOIC-8_150mil MOSFETs ROHS
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Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, PP CH, W/D DIOD, 40V, 8A,SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-40V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, P Channel:-8A; Drain Source Voltage Vds, P Channel:-40V; Module Configuration:Dual; On Resistance Rds(on), P Channel:0.021ohm; Power Dissipation Pd:3.2W
Parte # Mfg. Descrizione Azione Prezzo
PD55035S-E
DISTI # 27143827
STMicroelectronicsTrans RF MOSFET N-CH 40V 7A 3-Pin PowerSO-10RF (Straight lead)
RoHS: Compliant
250
  • 100:$20.3832
  • 50:$21.5822
PD55035S-E
DISTI # 497-5303-5-ND
STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube
Temporarily Out of Stock
  • 400:$24.8530
PD55035S-E
DISTI # PD55035S-E
STMicroelectronicsTrans MOSFET N-CH 40V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) - Bag (Alt: PD55035S-E)
RoHS: Compliant
Min Qty: 400
Container: Bag
Americas - 0
  • 400:$25.5900
  • 800:$24.3900
  • 1600:$23.2900
  • 2400:$22.2900
  • 4000:$21.7900
PD55035S-E
DISTI # 511-PD55035S-E
STMicroelectronicsRF MOSFET Transistors POWER RF Transistor
RoHS: Compliant
0
    PD55035STR-E
    DISTI # 511-PD55035STR-E
    STMicroelectronicsRF MOSFET Transistors POWER R.F.
    RoHS: Compliant
    0
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      FET RF 40V 500MHZ PWRSO-10
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      OMO.#: OMO-PD55008S-E-STMICROELECTRONICS

      FET RF 40V 500MHZ PWRSO10
      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di PD55035S-E è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      33,08 USD
      33,08 USD
      5
      32,74 USD
      163,70 USD
      10
      30,51 USD
      305,10 USD
      25
      29,14 USD
      728,50 USD
      100
      26,06 USD
      2 606,00 USD
      250
      24,86 USD
      6 215,00 USD
      500
      23,66 USD
      11 830,00 USD
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