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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SI7106DN-T1-GE3 DISTI # V72:2272_09215606 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 1477 |
|
| SI7106DN-T1-GE3 DISTI # V36:1790_09215606 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 |
|
| SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 3417In Stock |
|
| SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 3417In Stock |
|
| SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 12.5A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| SI7106DN-T1-GE3 DISTI # 25789862 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 1477 |
|
| SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R (Alt: SI7106DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 3000 |
|
| SI7106DN-T1-GE3 DISTI # SI7106DN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 20V 12.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7106DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7106DN-T1-GE3 DISTI # 33P5373 | Vishay Intertechnologies | N CH MOSFET,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,No. of Pins:8,On Resistance Rds(on):6.2mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-PowerPAK 1212,Power Dissipation Pd:3.8W RoHS Compliant: Yes | 0 |
|
| SI7106DN-T1-GE3 DISTI # 12R3254 | Vishay Intertechnologies | N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:19.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV,Power Dissipation Pd:3.8W RoHS Compliant: Yes | 0 |
|
| SI7106DN-T1-GE3 DISTI # 781-SI7106DN-T1-GE3 | Vishay Intertechnologies | MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant | 5878 |
|
| SI7106DN-T1-GE3 | Vishay Intertechnologies | 7127 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3 |
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 |
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Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3 |
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 |
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Mfr.#: SI7106DN-T1-E3-CUT TAPE |
Nuovo e originale |
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Mfr.#: SI7106DN OMO.#: OMO-SI7106DN-1190 |
Nuovo e originale |
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Mfr.#: SI7106DN-T1-GE3 OMO.#: OMO-SI7106DN-T1-GE3-VISHAY |
MOSFET N-CH 20V 12.5A 1212-8 |
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Mfr.#: SI7106DN-TI-E3 OMO.#: OMO-SI7106DN-TI-E3-1190 |
Nuovo e originale |
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Mfr.#: SI7106DNT1E3 OMO.#: OMO-SI7106DNT1E3-1190 |
Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: SI7106DN-T1-E3 OMO.#: OMO-SI7106DN-T1-E3-VISHAY |
MOSFET N-CH 20V 12.5A 1212-8 |