FDD1600N10ALZ

Mfr. #:: FDD1600N10ALZ
Produttore:: ON Semiconductor
Descrizione:: MOSFET N CH 100V 6.8A TO252-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: FDD1600N10ALZ Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Attributo del prodotto
Valore attributo

Produttore: Fairchild Semiconductor

categoria di prodotto: FET - Single

Serie: PowerTrenchR

Confezione: Imballaggio alternativo Digi-ReelR

Unità di peso: 0.009184 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: TO-252-3, DPak (2 Leads + Tab), SC-63

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: TO-252, (D-Pak)

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 14.9W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

Ingresso-Capacità-Ciss-Vds: 225pF @ 50V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 6.8A (Tc)

Rds-On-Max-Id-Vgs: 160 mOhm @ 3.4A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Carica-Qg-Vgs: 3.61nC @ 10V

Pd-Power-Dissipazione: 14.9 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 14 ns

Ora di alzarsi: 14 ns

Id-Continuo-Scarico-Corrente: 6.8 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 2.8 V

Rds-On-Drain-Source-Resistenza: 175 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 13 ns

Tempo di ritardo all'accensione tipico: 7 ns

Qg-Gate-Carica: 3.61 nC

Transconduttanza diretta-Min: 34 S

Tags: FDD16, FDD1, FDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD1600N10ALZ Descrizione

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ

***ark: PT5 100V LL ZENER 150MOHM GREEN COMPOUND - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

***ical: Trans MOSFET N-CH 100V 6.8A 3-Pin(2+Tab) TO-252 T/R

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
FDD1600N10ALZ DISTI # FDD1600N10ALZCT-ND	ON Semiconductor	MOSFET N CH 100V 6.8A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1718In Stock	1000:$0.3807 500:$0.4723 100:$0.6325 10:$0.8160 1:$0.9300
FDD1600N10ALZ DISTI # FDD1600N10ALZDKR-ND	ON Semiconductor	MOSFET N CH 100V 6.8A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1718In Stock	1000:$0.3807 500:$0.4723 100:$0.6325 10:$0.8160 1:$0.9300
FDD1600N10ALZ DISTI # FDD1600N10ALZTR-ND	ON Semiconductor	MOSFET N CH 100V 6.8A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.3363
FDD1600N10ALZD DISTI # FDD1600N10ALZDCT-ND	ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDD1600N10ALZD DISTI # FDD1600N10ALZDDKR-ND	ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDD1600N10ALZD DISTI # FDD1600N10ALZDTR-ND	ON Semiconductor	MOSFET N-CH 100V 6.8A TO252-5L RoHS: Compliant Container: Tape & Reel (TR)	Temporarily Out of Stock
FDD1600N10ALZ DISTI # FDD1600N10ALZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R (Alt: FDD1600N10ALZ) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.3061 5000:$0.2943 7500:$0.2834 12500:$0.2733 25000:$0.2639 62500:$0.2551 125000:$0.2509
FDD1600N10ALZ DISTI # FDD1600N10ALZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R - Tape and Reel (Alt: FDD1600N10ALZ) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2639 5000:$0.2619 10000:$0.2579 15000:$0.2549 25000:$0.2489
FDD1600N10ALZ DISTI # FDD1600N10ALZ	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 3-Pin DPAK T/R (Alt: FDD1600N10ALZ) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.3899 5000:€0.3189 10000:€0.2919 15000:€0.2699 25000:€0.2509
FDD1600N10ALZD DISTI # FDD1600N10ALZD	ON Semiconductor	Trans MOSFET N-CH 100V 6.8A 5-Pin TO-252 T/R - Tape and Reel (Alt: FDD1600N10ALZD) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0
FDD1600N10ALZ DISTI # 46AC0764	ON Semiconductor	MOSFET, N-CH, 100V, 6.8A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.124ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	2385	1000:$0.3460 500:$0.3740 250:$0.4000 100:$0.4270 50:$0.5020 25:$0.5770 10:$0.6520 1:$0.7860
FDD1600N10ALZ DISTI # 63W2849	ON Semiconductor	FET 100V 150.0 MOHM DPAK / REEL	0	25000:$0.2600 10000:$0.2680 2500:$0.2780 1:$0.2800
FDD1600N10ALZ DISTI # 512-FDD1600N10ALZ	ON Semiconductor	MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND RoHS: Compliant	2003	1:$0.7500 10:$0.6270 100:$0.4040 1000:$0.3240
FDD1600N10ALZD DISTI # 512-FDD1600N10ALZD	ON Semiconductor	MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak RoHS: Compliant	989	1:$0.8300 10:$0.7060 100:$0.5420 500:$0.4790 1000:$0.3780 2500:$0.3360 10000:$0.3230 25000:$0.3130
FDD1600N10ALZ DISTI # 8648041P	ON Semiconductor	MOSFET N-CH 100V 6.8A POWERTRENCH DPAK, RL	1525	2500:£0.2080 1250:£0.2430 250:£0.2730 125:£0.3020
FDD1600N10ALZ	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant	Europe - 2500
FDD1600N10ALZ DISTI # 2825152	ON Semiconductor	MOSFET, N-CH, 100V, 6.8A, TO-252-3 RoHS: Compliant	2425	500:£0.2700 250:£0.2900 100:£0.3110 25:£0.4980 5:£0.5440
FDD1600N10ALZ DISTI # 2825152	ON Semiconductor	MOSFET, N-CH, 100V, 6.8A, TO-252-3 RoHS: Compliant	2385	5000:$0.4060 1000:$0.4300 500:$0.4660 250:$0.5680 100:$0.6930 25:$1.0100 5:$1.1800

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: FDD1600N10ALZ OMO.#: OMO-FDD1600N10ALZ	MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND
	Mfr.#: FDD1600N10ALZD OMO.#: OMO-FDD1600N10ALZD	MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak
	Mfr.#: FDD1600N10ALZ OMO.#: OMO-FDD1600N10ALZ-ON-SEMICONDUCTOR	MOSFET N CH 100V 6.8A TO252-3
	Mfr.#: FDD1600N10ALZD OMO.#: OMO-FDD1600N10ALZD-ON-SEMICONDUCTOR	MOSFET N-CH 100V 6.8A TO252-5L

Disponibilità

Azione:: Available
Su ordine:: 4000
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Il prezzo attuale di FDD1600N10ALZ è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,37 USD~~; ~~0,37 USD~~

10: ~~0,35 USD~~; ~~3,55 USD~~

100: ~~0,34 USD~~; ~~33,60 USD~~

500: ~~0,32 USD~~; ~~158,65 USD~~

1000: ~~0,30 USD~~; ~~298,70 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

FDD16 15
FDD1 92
FDD 715

FDD1600N10ALZ

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes