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IRFHM8363TRPBF

IRFHM8363TRPBF
Mfr. #:
IRFHM8363TRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 30V 11A 8PQFN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFHM8363TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IRFHM8363TRPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Array
Serie
HEXFETR
Confezione
Nastro e bobina (TR)
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-PowerVDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
8-PQFN (3.3x3.3), Power33
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
2.7W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
1165pF @ 10V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
11A
Rds-On-Max-Id-Vgs
14.9 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Carica-Qg-Vgs
15nC @ 10V
Pd-Power-Dissipazione
2.7 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
33 ns
Ora di alzarsi
94 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
11 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.8 V
Rds-On-Drain-Source-Resistenza
16.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
12 ns
Tempo di ritardo all'accensione tipico
14 ns
Qg-Gate-Carica
15 nC
Transconduttanza diretta-Min
20 S
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRFHM8363TRPBF
DISTI # V72:2272_13890764		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 3000:$0.2839
  • 1000:$0.3297
  • 500:$0.3973
  • 250:$0.4017
  • 100:$0.4061
  • 25:$0.5674
  • 10:$0.5745
  • 1:$0.6622
IRFHM8363TRPBF
DISTI # IRFHM8363TRPBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 11A 8PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$0.3850
IRFHM8363TRPBF
DISTI # 30331789		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 3000:$0.2839
  • 1000:$0.3297
  • 500:$0.3973
  • 250:$0.4017
  • 100:$0.4061
  • 26:$0.5674
IRFHM8363TRPBF
DISTI # 30327790		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 24000:$0.2954
  • 8000:$0.3135
  • 4000:$0.3145
IRFHM8363TRPBF
DISTI # IRFHM8363TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: IRFHM8363TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFHM8363TRPBF
    DISTI # IRFHM8363TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R - Tape and Reel (Alt: IRFHM8363TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.2879
    • 8000:$0.2769
    • 16000:$0.2669
    • 24000:$0.2579
    • 40000:$0.2539
    IRFHM8363TRPBF
    DISTI # SP001565948    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: SP001565948)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.4219
    • 8000:€0.3449
    • 16000:€0.3159
    • 24000:€0.2919
    • 40000:€0.2709
    IRFHM8363TRPBF
    DISTI # 05W5523    		Infineon Technologies AGMOSFET Transistor, Dual N Channel, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V , RoHS Compliant: Yes966
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    IRFHM8363TRPBF
    DISTI # 942-IRFHM8363TRPBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC
    RoHS: Compliant    		3630
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 4000:$0.3330
    • 8000:$0.3210
    • 24000:$0.3100
    IRFH8363TRPBF
    DISTI # IRFHM8363TRPBF    		Infineon Technologies AGTransistor: N-MOSFET x2,unipolar,30V,11A,2.7W,PQFN3.3X3.32922
    • 1:$0.6700
    • 3:$0.5900
    • 10:$0.5300
    • 100:$0.4900
    IRFHM8363TRPBF
    DISTI # 2114658    		Infineon Technologies AGMOSFET, DUAL, N-CH, 30V, 10A, PQFN
    RoHS: Compliant    		1224
    • 1:$1.4200
    IRFHM8363TRPBF
    DISTI # 2114658    		Infineon Technologies AGMOSFET, DUAL, N-CH, 30V, 10A, PQFN
    RoHS: Compliant    		1611
    • 5:£0.7520
    • 25:£0.6480
    • 100:£0.4880
    • 250:£0.4610
    • 500:£0.4320
    IRFHM8363TRPBF
    DISTI # C1S322000576751    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 250:$0.4017
    • 100:$0.4061
    • 25:$0.5674
    • 10:$0.5745
    IRFHM8363TRPBF
    DISTI # C1S322000579776    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 4000:$0.4590
    Immagine Parte # Descrizione
    IRFHM8330TRPBF

    Mfr.#: IRFHM8330TRPBF

    OMO.#: OMO-IRFHM8330TRPBF

    		 MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
    IRFHM8326TRPBF

    Mfr.#: IRFHM8326TRPBF

    OMO.#: OMO-IRFHM8326TRPBF

    		 MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY
    IRFHM8329TRPBF

    Mfr.#: IRFHM8329TRPBF

    OMO.#: OMO-IRFHM8329TRPBF

    		 MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3
    IRFHM8342TRPBF

    Mfr.#: IRFHM8342TRPBF

    OMO.#: OMO-IRFHM8342TRPBF

    		 MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET
    IRFHM830TR2PBF

    Mfr.#: IRFHM830TR2PBF

    OMO.#: OMO-IRFHM830TR2PBF

    		 MOSFET MOSFT 30V 40A 3.8mOhm
    IRFHM8334TRPBF

    Mfr.#: IRFHM8334TRPBF

    OMO.#: OMO-IRFHM8334TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 13A 8PQFN
    IRFHM830TRPBF-CUT TAPE

    Mfr.#: IRFHM830TRPBF-CUT TAPE

    OMO.#: OMO-IRFHM830TRPBF-CUT-TAPE-1190

    		 Nuovo e originale
    IRFHM8337TRPBF-CUT TAPE

    Mfr.#: IRFHM8337TRPBF-CUT TAPE

    OMO.#: OMO-IRFHM8337TRPBF-CUT-TAPE-1190

    		 Nuovo e originale
    IRFHM830DTRPBF.

    Mfr.#: IRFHM830DTRPBF.

    OMO.#: OMO-IRFHM830DTRPBF--1190

    		 Nuovo e originale
    IRFHM8329TRPBF

    Mfr.#: IRFHM8329TRPBF

    OMO.#: OMO-IRFHM8329TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 16A PQFN
    Disponibilità
    Azione:
    Available
    Su ordine:
    2000
    Inserisci la quantità:
    Il prezzo attuale di IRFHM8363TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,38 USD
    0,38 USD
    10
    0,36 USD
    3,62 USD
    100
    0,34 USD
    34,28 USD
    500
    0,32 USD
    161,85 USD
    1000
    0,30 USD
    304,70 USD
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