SIS407DN-T1-GE3

Mfr. #:: SIS407DN-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET P-CH 20V 25A 1212-8 PPAK
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIS407DN-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: VISHAY

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SIS407DN-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR 1212-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR 1212-8

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 33W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: 2760pF @ 10V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 25A (Tc)

Rds-On-Max-Id-Vgs: 9.5 mOhm @ 15.3A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Carica-Qg-Vgs: 93.8nC @ 8V

Pd-Power-Dissipazione: 33 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 38 ns

Ora di alzarsi: 28 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuo-Scarico-Corrente: - 25 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 1 V

Rds-On-Drain-Source-Resistenza: 8.2 mOhms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 92 ns

Tempo di ritardo all'accensione tipico: 23 ns

Qg-Gate-Carica: 62.5 nC

Transconduttanza diretta-Min: 60 S

Tags: SIS407D, SIS407, SIS40, SIS4, SIS

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS407DN-T1-GE3 Descrizione

***ure Electronics: Single P-Channel 20 V 0.0095 O 38 nC Power Mosfet - PowerPAK-1212-8

***et Europe: Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R

***ical: Trans MOSFET P-CH 20V 25A 8-Pin PowerPAK 1212 T/R

***ied Electronics & Automation: MOSFET P-CH 20V 25A 1212-8 PPAK

***ark: P-CHANNEL 20-V (D-S) MOSFET

***ronik: P-CH 20V 25A 8,2mOhm PPAK1212 RoHSconf

***: P-CHANNEL 20-V (D-S)

***nell: MOSFET,P CH,DIODE,20V,25A,PPAK1212-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:-20V; On State Resistance:8200µohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:-8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:-15.4A; Power Dissipation:3.6W

***ment14 APAC: MOSFET,P CH,DIODE,20V,25A,PPAK1212-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-25A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):8200µohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-15.4A; Power Dissipation Pd:3.6W; Voltage Vgs Max:-8V

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIS407DN-T1-GE3 DISTI # V72:2272_09216082	Vishay Intertechnologies	Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1500	1000:$0.4270 500:$0.4803 250:$0.5205 100:$0.5384 25:$0.6659 10:$0.7546 1:$0.8025
SIS407DN-T1-GE3 DISTI # SIS407DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 25A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20727In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
SIS407DN-T1-GE3 DISTI # SIS407DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 25A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20727In Stock	1000:$0.4929 500:$0.6243 100:$0.8050 10:$1.0190 1:$1.1500
SIS407DN-T1-GE3 DISTI # SIS407DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 25A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	18000In Stock	3000:$0.4466
SIS407DN-T1-GE3 DISTI # 30751088	Vishay Intertechnologies	Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.4987
SIS407DN-T1-GE3 DISTI # 31017909	Vishay Intertechnologies	Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	1500	1000:$0.4270 500:$0.4803 250:$0.5205 100:$0.5384 25:$0.6659 16:$0.7546
SIS407DN-T1-GE3 DISTI # SIS407DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R (Alt: SIS407DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 3000
SIS407DN-T1-GE3 DISTI # SIS407DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS407DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5189 6000:$0.5029 12000:$0.4829 18000:$0.4689 30000:$0.4569
SIS407DN-T1-GE3 DISTI # 09X6415	Vishay Intertechnologies	Trans MOSFET P-CH 20V 15.4A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 09X6415) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.0200 25:$0.8360 50:$0.7390 100:$0.6410 250:$0.5970 500:$0.5520 1000:$0.4840
SIS407DN-T1-GE3 DISTI # 09X6415	Vishay Intertechnologies	MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-25A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0082ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV , RoHS Compliant: Yes	494	1:$1.0200 25:$0.8360 50:$0.7390 100:$0.6410 250:$0.5970 500:$0.5520 1000:$0.4840
SIS407DN-T1-GE3. DISTI # 28AC2113	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$0.4840 3000:$0.4840
SIS407DN-T1-GE3 DISTI # 70459587	Vishay Siliconix	MOSFET P-CH 20V 25A 1212-8 PPAK RoHS: Compliant	0	3000:$0.5610 6000:$0.5370
SIS407DN-T1-GE3 DISTI # 781-SIS407DN-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	5967	1:$1.0200 10:$0.8360 100:$0.6410 500:$0.5520 1000:$0.4840
SIS407DN-T1-GE3	Vishay Intertechnologies	Single P-Channel 20 V 0.0095 O 38 nC Power Mosfet - PowerPAK-1212-8 RoHS: Compliant	3000Reel	3000:$0.4150
SIS407DN-T1-GE3 DISTI # C1S803603575366	Vishay Intertechnologies	MOSFETs	1500	250:$0.5231 100:$0.5379 25:$0.6719 10:$0.7341
SIS407DN-T1-GE3 DISTI # 1859001	Vishay Intertechnologies	MOSFET, P CH, -20V, -25A, PPAK1212-8 RoHS: Compliant	1227	5:£0.7080 25:£0.6330 100:£0.4850 250:£0.4510 500:£0.4170
SIS407DN-T1-GE3 DISTI # 1859001	Vishay Intertechnologies	MOSFET, P CH, -20V, -25A, PPAK1212-8 RoHS: Compliant	1157	1:$1.6200 10:$1.3300 100:$1.0200 500:$0.8740 1000:$0.7660 3000:$0.7660
SIS407DN-T1-GE3 DISTI # XSFP00000090703	Vishay Siliconix	RoHS: Compliant	16152	3000:$0.8300 16152:$0.7545
SIS407DN-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 3000

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SIS407DN-T1-GE3 OMO.#: OMO-SIS407DN-T1-GE3	MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
	Mfr.#: SIS407DN OMO.#: OMO-SIS407DN-1190	Nuovo e originale
	Mfr.#: SIS407DN-T1-E3 OMO.#: OMO-SIS407DN-T1-E3-1190	Nuovo e originale
	Mfr.#: SIS407DN-T1-GE3 OMO.#: OMO-SIS407DN-T1-GE3-VISHAY	MOSFET P-CH 20V 25A 1212-8 PPAK

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di SIS407DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,55 USD~~; ~~0,55 USD~~

10: ~~0,53 USD~~; ~~5,26 USD~~

100: ~~0,50 USD~~; ~~49,82 USD~~

500: ~~0,47 USD~~; ~~235,25 USD~~

1000: ~~0,44 USD~~; ~~442,80 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

SIS407D 3
SIS407 6
SIS40 20
SIS4 92
SIS 843

SIS407DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes